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As the age of the Internet of Things (IoTs) unfolds, along with the rapid advancement of artificial intelligence (AI), traditional von Neumann-based computing systems encounter significant challenges in handling vast amounts of data storage and processing. Bioinspired neuromorphic computing strategies offer a promising solution, characterized by features of in-memory computing, massively parallel processing, and event-driven operations. Compared to traditional rigid silicon-based devices, flexible neuromorphic devices are lightweight, thin, and highly stretchable, garnering considerable attention. Among the materials utilized in these devices, transition metal carbides/nitrides (MXenes) are particularly noteworthy materials with their excellent flexibility, exceptional conductivity, and hydrophilicity, which confer remarkable properties upon these devices. Herein, a comprehensive discussion is provided on the applications of MXenes in flexible memory and neuromorphic devices. This review covers the basic principles and device structures of memory and neuromorphic devices, common parameters and emerging materials of flexible devices, as well as the common synthesis, functionalization methods, and distinct properties of MXenes. The remaining challenges and future opportunities of MXenes in relevant devices are also presented. This review can serve as a valuable reference and lay a cornerstone for the practical and feasible implementation of MXenes in flexible memory and neuromorphic technologies.
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http://dx.doi.org/10.1002/smll.202410914 | DOI Listing |
J Colloid Interface Sci
September 2025
School of Electronic Information & Artificial Intelligence, Shaanxi University of Science and Technology, Xi'an 710021, China.
The integration of information memory and computing enabled by nonvolatile memristive device has been widely acknowledged as a critical solution to circumvent the von Neumann architecture limitations. Herein, the Au/NiO/CaBiTiO/FTO (CBTi/NiO) heterojunction based memristor with varying film thicknesses are demonstrated on FTO/glass substrates, and the CBTi/NiO-4 sample shows the optimal memristor characteristics with 5 × 10 stable switching cycles and 10-s resistance state retention. The electrical conduction in the low-resistance state is dominated by Ohmic behavior, while the high-resistance state exhibited characteristics consistent with the space-charge-limited conduction (SCLC) model.
View Article and Find Full Text PDFNat Commun
September 2025
Computational Science and Technology, KTH Royal Institute of Technology, Stockholm, Sweden.
Biological nervous systems constitute important sources of inspiration towards computers that are faster, cheaper, and more energy efficient. Neuromorphic disciplines view the brain as a coevolved system, simultaneously optimizing the hardware and the algorithms running on it. There are clear efficiency gains when bringing the computations into a physical substrate, but we presently lack theories to guide efficient implementations.
View Article and Find Full Text PDFJ Phys Chem Lett
September 2025
Faculty of Materials Science and Chemistry, China University of Geosciences, Wuhan 430074, China.
Two-dimensional ferroelectric tunnel junctions (2D FTJs) have attracted extensive attention in recent years, which mainly change the height of the tunnel barrier via manipulation of the ferroelectric polarization. However, it is very challenging to realize the high tunneling electroresistance (TER) of FTJs based on the barrier height. Here, we report the 2D FTJs using a unique structure with semiconducting MoS/α-InSe/monolayer graphene, where ferroelectric polarization of α-InSe shifts the barrier height by 1.
View Article and Find Full Text PDFSmall
September 2025
Hybrid Materials Center (HMC), Sejong University, Seoul, 05006, Republic of Korea.
2D chalcogenide-based memristors have the potential to be used in artificial biological visual systems since their synaptic behavior can be optically and electrically modulated. Furthermore, 2D van der Waals materials such as SnS can be used to integrate multifunctional optoelectronic devices by employing a rational design. Here, the simulation of a human biological visual system is reported by using multifunctional optoelectronic synaptic devices.
View Article and Find Full Text PDFNanoscale Horiz
September 2025
Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576, Singapore.
MEMS and NEMS increasingly integrate multiple functions within compact platforms, enabled by piezoelectric and ferroelectric materials such as PZT, BaTiO, AlN, ScAlN, PVDF, and HfZrO. These materials support devices including mechanical sensors, RF resonators for gas detection, energy harvesters, non-volatile memories such as FeRAM and FeFETs, and neuromorphic computing arrays, as well as microspeakers and microphones for compact audio interfaces. They also play a key role in reconfigurable photonic components through acousto-optic and electro-optic modulation.
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