Category Ranking
98%
Total Visits
921
Avg Visit Duration
2 minutes
Citations
20
Article Abstract
One of the major challenges in QLED research is improving the stability of the devices. In this study, we fabricated all inorganic quantum-dot light emitting diodes (QLEDs) using hafnium oxide (HfO) as the hole transport layer (HTL), a material commonly used for insulator. Oxygen vacancies in HfO create defect states below the Fermi level, providing a pathway for hole injection. The concentration of these oxygen vacancies can be controlled by the annealing temperature. We optimized the all-inorganic QLEDs with HfO as the HTL by changing the annealing temperature. The optimized QLEDs with HfO as the HTL showed a maximum luminance and current efficiency of 66,258 cd/m and 9.7 cd/A, respectively. The fabricated all-inorganic QLEDs exhibited remarkable stability, particularly when compared to devices using organic materials for the HTL. Under extended storage in ambient conditions, the all-inorganic device demonstrated a significantly enhanced operating lifetime (T) of 5.5 h, which is 11 times longer than that of QLEDs using an organic HTL. These results indicate that the all-inorganic QLEDs structure, with ITO/MoO/HfO/QDs/ZnMgO/Al, exhibits superior stability compared to organic-inorganic hybrid QLEDs.
Download full-text PDF |
Source |
|---|---|
| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC11477746 | PMC |
| http://dx.doi.org/10.3390/ma17194739 | DOI Listing |
Publication Analysis
Top Keywords
Similar Publications
Surface passivation strategies for CsPbBr quantum dots aiming at nonradiative suppression and enhancement of electroluminescent light-emitting diodes.
Dalton Trans
January 2025
College of Optoelectronic Engineering, Chongqing University of Post and Telecommunications, 400065, People's Republic of China.
With many fascinating characteristics, such as color-tunability, narrow-band emission, and low-cost solution processability, all-inorganic lead halide perovskite quantum dots (QDs) have attracted keen attention for electroluminescent light-emitting diodes (QLEDs) and display applications. However, the performance of perovskite QLED devices is intrinsically limited by the inefficient electrical carrier transport capacity. Herein, one facile but effective method is proposed to enhance the perovskite QLED performance by incorporating a short carbon chain ligand of 2-phenethylammonium bromide (PEABr) to passivate the CsPbBr QD surface.
View Article and Find Full Text PDFImprovement of the Stability of Quantum-Dot Light Emitting Diodes Using Inorganic HfO Hole Transport Layer.
Materials (Basel)
September 2024
Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Yongin 17104, Republic of Korea.
One of the major challenges in QLED research is improving the stability of the devices. In this study, we fabricated all inorganic quantum-dot light emitting diodes (QLEDs) using hafnium oxide (HfO) as the hole transport layer (HTL), a material commonly used for insulator. Oxygen vacancies in HfO create defect states below the Fermi level, providing a pathway for hole injection.
View Article and Find Full Text PDFIodotrimethylsilane as a Reactive Ligand for Surface Etching and Passivation of Perovskite Nanocrystals toward Efficient Pure-red to Deep-red LEDs.
Angew Chem Int Ed Engl
November 2023
Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, 215123, Suzhou, China.
Resurfacing perovskite nanocrystals (NCs) with tight-binding and conductive ligands to resolve the dynamic ligands-surface interaction is the fundamental issue for their applications in perovskite light-emitting diodes (PeLEDs). Although various types of surface ligands have been proposed, these ligands either exhibit weak Lewis acid/base interactions or need high polar solvents for dissolution and passivation, resulting in a compromise in the efficiency and stability of PeLEDs. Herein, we report a chemically reactive agent (Iodotrimethylsilane, TMIS) to address the trade-off among conductivity, solubility and passivation using all-inorganic CsPbI NCs.
View Article and Find Full Text PDFStructural and Optical Properties of NiO/ZnS Core-Shell Nanostructures for Efficient Quantum Dot Light-Emitting Diodes.
Materials (Basel)
July 2023
Department of Advanced Materials Engineering, Kyonggi University, Suwon 16227, Republic of Korea.
Colloidal quantum dots (QDs) have emerged as promising candidates for optoelectronic devices. In particular, quantum dot light-emitting devices (QLEDs) utilizing QDs as the emission layer offer advantages in terms of simplified fabrication processes. However, the use of poly(3,4-ethylenedioxythiophene):poly(styrene-sulfonate) as a hole injection layer (HIL) in QLEDs presents limitations due to its acidic and hygroscopic nature.
View Article and Find Full Text PDFElectroluminescent materials toward near ultraviolet region.
Chem Soc Rev
August 2021
Key Laboratory of Functional Inorganic Material Chemistry, Ministry of Education, School of Chemistry and Materials, Heilongjiang University, 74 Xuefu Road, Harbin 150080, P. R. China.
Near ultraviolet (NUV) light-emitting materials and devices are significant due to unique applications in anti-counterfeit, manufacturing industries, and hygienic treatments. However, the development of high-efficiency NUV electroluminescent devices encounters great challenges and is far behind their RGB emitter counterparts. Besides the photoluminescence quantum yields (PLQYs) of NUV materials being higher than 40%, charge injection and lopsided carrier transport also determine the device performance, leading to great efforts in optimizing the frontier molecular orbitals to fit the adjacent function layer.
View Article and Find Full Text PDF