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Tunneling ionization, a fascinating quantum phenomenon, has played the key role in the development of attosecond physics. Upon absorption of a few tens of photons, tunneling ionization creates ions in different excited states and even enables the formation of population inversion between ionic states. However, the underlying physics is still being debated. Here, we demonstrate a significant enhancement in the efficiency of multiphoton excitation when ionization of neutral molecules and resonant excitation of ions coexist in strong laser fields. It facilitates the dramatic increase in population inversion and lasing radiation in N_{2}^{+} around 1000 nm pump wavelength. Utilizing the ionization-coupling theory, we discover that the synergistic interplay between tunneling ionization and multiphoton excitation enables the ionic coherence to be maximized by phase locking of the periodically created ionic dipoles and consistently maintain an optimal phase for the follow-up photoexcitation. This Letter provides new insights into the photoexcitation mechanism of ions in strong laser fields and opens up a route for optimizing ionic lasing radiations.
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http://dx.doi.org/10.1103/PhysRevLett.133.113201 | DOI Listing |
J Mol Model
September 2025
Department of Electronics and Communication Engineering, National Institute of Technology Patna, Patna, Bihar, India.
Context: This study investigates the radiation tolerance of a SiGe source vertical tunnel field effect transistor (VTFET) under heavy ion-induced single event effects (SEEs). Single event effects (SEEs) occur when high-energy particles interact with semiconductor devices, leading to unintended behavior. The effect of high energy ions on the VTFET is examined for various linear energy transfer (LET) values and at multiple ion hit locations.
View Article and Find Full Text PDFMicromachines (Basel)
July 2025
State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi'an 710071, China.
AlGaN-based high-electron-mobility transistors are critical for next-generation power electronics and radio-frequency applications, yet achieving stable enhancement-mode operation with a high threshold voltage remains a key challenge. In this work, we designed p-AlGaN superlattices with different structures and performed energy band structure simulations using the device simulation software Silvaco. The results demonstrate that thin barrier structures lead to reduced acceptor incorporation, thereby decreasing the number of ionized acceptors, while facilitating vertical hole transport.
View Article and Find Full Text PDFUltrason Sonochem
August 2025
ICSM, Univ Montpellier, UMR 5257, CEA, CNRS, ENSCM, Marcoule, France. Electronic address:
Large number of chemical reactions can be described rigorously using classical thermodynamics and classical kinetics. However, there are an increasing number of examples of chemical reactions that deviate from "classical" behavior. Describing them requires considering quantum effects.
View Article and Find Full Text PDFWe demonstrate compression of few-cycle ultraviolet (UV) resonant dispersive waves (RDWs) generated in a cascaded hollow capillary fiber setup using a Yb laser system. Temporal characterization is performed using both tunneling ionization with a perturbation for the time-domain observation of an electric field (TIPTOE) and self-diffraction frequency-resolved optical gating (SD-FROG), which show good agreement. Through careful dispersion management, we compress the RDW pulse to 6.
View Article and Find Full Text PDFUtilizing a classical ensemble model (CEM), we have studied the rescattering behavior of quasi-free tunneling electron and correlation dynamics of electron pair during nonsequential double ionization (NSDI) of Xe atoms induced by a counter-rotating, two-color, elliptically polarized (TCEP) laser field. Our numerical results reveal that the momentum of the first tunneling electron is predominantly located in the third quadrant of momentum spectrum, whereas the momentum spectrum of the second electron presents a triangular structure along the direction of the negative vector potential of driving field. This phenomenon occurs because the first electron has greater emission kinetic energy than the second one, rendering the latter more sensitive to the influence exerted by the electric field vector potential.
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