Category Ranking
98%
Total Visits
921
Avg Visit Duration
2 minutes
Citations
20
Article Abstract
Field-effect transistors (FETs) based on two-dimensional materials (2DMs) with atomically thin channels have emerged as a promising platform for beyond-silicon electronics. However, low carrier mobility in 2DM transistors driven by phonon scattering remains a critical challenge. To address this issue, we propose the controlled introduction of localized tensile strain as an effective means to inhibit electron-phonon scattering in 2DM. Strain is achieved by conformally adhering the 2DM via van der Waals forces to a dielectric layer previously nanoengineered with a gray-tone topography. Our results show that monolayer MoS FETs under tensile strain achieve an 8-fold increase in on-state current, reaching mobilities of 185 cm²/Vs at room temperature, in good agreement with theoretical calculations. The present work on nanotopographic grayscale surface engineering and the use of high-quality dielectric materials has the potential to find application in the nanofabrication of photonic and nanoelectronic devices.
Download full-text PDF |
Source |
|---|---|
| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC11322165 | PMC |
| http://dx.doi.org/10.1038/s41467-024-51165-4 | DOI Listing |
Publication Analysis
Top Keywords
Similar Publications
Wafer-Scale Demonstration of BEOL-Compatible Ambipolar MoS Devices Enabled by Plasma-Enhanced Atomic Layer Deposition.
ACS Appl Mater Interfaces
September 2025
Nanoelectronics Graphene and 2D Materials Laboratory, CITIC-UGR, Department of Electronics, University of Granada, Granada 18014, Spain.
The relentless scaling of semiconductor technology demands materials beyond silicon to sustain performance improvements. Transition metal dichalcogenides (TMDs), particularly MoS, offer excellent electronic properties; however, achieving scalable and CMOS-compatible fabrication remains a critical challenge. Here, we demonstrate a scalable and BEOL-compatible approach for the direct wafer-scale growth of MoS devices using plasma-enhanced atomic layer deposition (PE-ALD) at temperatures below 450 °C, fully compliant with CMOS thermal budgets.
View Article and Find Full Text PDFModulation of photoluminescence in a MoS device through tuning the quantum tunneling effect.
Nanoscale Horiz
August 2025
Department of Physics, National Taiwan Normal University, Taipei 11677, Taiwan.
Transition metal dichalcogenide (TMD) materials, such as molybdenum disulfide (MoS), have emerged as promising platforms for exploring electrically tunable light-matter interactions, which are critical for designing high-performance photodetector systems. In this study, we investigate the advancements in quantum tunneling MoS field-effect transistors (QT-MoS FETs) and their optoelectronic properties, with a focus on photoresponse behavior and photoluminescence (PL) spectral variations driven by photoinduced tunneling currents through oxide layers. The results demonstrate that tunneling-induced exciton and trion dissociation effects lead to a pronounced blue shift in PL spectral peaks and significant changes in light intensity.
View Article and Find Full Text PDFRestorative Effects of Low-Temperature Post-Sulfur Annealing on Device Performance of Monolayer MoS Transistors for NMOS Inverters.
Small
August 2025
Department of Electronic Materials Engineering, Kwangwoon University, Seoul, 01897, Republic of Korea.
The restorative effects of sulfur (S)-passivation through low-temperature (160 °C) post-S annealing on the performance and stability of monolayer molybdenum disulfide (MoS) field-effect transistors (FETs) are investigated. S-passivation suppresses S vacancies in the monolayer MoS channel, restoring its intrinsic electrical and material properties and leading to enhancements in field-effect mobility from 8 to 95 cm V s and subthreshold swing from 0.21 to 0.
View Article and Find Full Text PDFPhonon-Assisted Charge Trapping and Threshold Voltage Modulation in MoS FETs with AlON Overlayers.
ACS Appl Mater Interfaces
August 2025
Department of Physics, University of Seoul, Seoul 02504, Republic of Korea.
In this study, we demonstrate that a room-temperature reactively sputtered aluminum oxynitride (AlON) overlayer enables both effective doping and pronounced threshold voltage hysteresis in multilayer MoS FETs, while preserving field-effect mobility. Compared to conventional AlO, the AlON layer introduces trap states that are energetically aligned with the conduction band of MoS, facilitating charge exchange across the heterointerface. Capacitance-voltage measurements confirm that nitrogen incorporation reduces the effective fixed charge density, enabling mobility-preserving operation without thermal annealing.
View Article and Find Full Text PDFExtension Doping with Low-Resistance Contacts for P-Type Monolayer WSe Field-Effect Transistors.
Adv Electron Mater
June 2025
Holonyak Micro and Nanotechnology Laboratory, The Grainger College of Engineering, University of Illinois Urbana-Champaign, Urbana, Illinois 61801, United States.
Source/Drain extension doping is crucial for minimizing the series resistance of the ungated channel and reducing the contact resistance of field-effect transistors (FETs) in complementary metal-oxide-semiconductor (CMOS) technology. 2D semiconductors, such as MoS and WSe, are promising channel materials for beyond-silicon CMOS. A key challenge is to achieve extension doping for 2D monolayer FETs without damaging the atomically thin material.
View Article and Find Full Text PDF