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Graphene photodetectors have exhibited high bandwidth and capability of being integrated with silicon photonics (SiPh), holding promise for future optical communication devices. However, they usually suffer from a low photoresponsivity due to weak optical absorption. In this work, we have implemented SiPh-integrated twisted bilayer graphene (tBLG) detectors and reported a responsivity of 0.65 A W for telecom wavelength 1,550 nm. The high responsivity enables a 3-dB bandwidth of >65 GHz and a high data stream rate of 50 Gbit s. Such high responsivity is attributed to the enhanced optical absorption, which is facilitated by van Hove singularities in the band structure of high-mobility tBLG with 4.1 twist angle. The uniform performance of the fabricated photodetector arrays demonstrates a fascinating prospect of large-area tBLG as a material candidate for heterogeneous integration with SiPh.
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http://dx.doi.org/10.1038/s41467-024-47925-x | DOI Listing |
J Phys Chem Lett
September 2025
Materials Genome Institute, School of Materials and Energy, Yunnan University, Kunming 650091, P. R. China.
Magnetic two-dimensional van der Waals (vdWs) materials hold potential applications in low-power and high-speed spintronic devices due to their degrees of freedom such as valley and spin. In this Letter, we propose a mechanism that uses stacking engineering to control valley polarization (VP), ferroelectricity, layer polarization (LP), and magnetism in vdWs bilayers. Through first-principles calculations, we predict that the T-VSI monolayer is a magnetic semiconductor with a sizable VP.
View Article and Find Full Text PDFACS Nano
September 2025
Hefei National Research Center for Physical Sciences at the Microscale, CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026, China.
As a versatile platform for exploring exotic quantum phases, moiré superlattices, ranging from twisted graphene to twisted transition metal dichalcogenides, have been intensively studied. In this work, based on exact diagonalization and Hartree-Fock mean-field calculations, the interaction-driven topological phases are investigated in hole-doped twisted bilayer MoS at the high filling factor = 3. Besides the nematic insulator and quantum anomalous Hall phases, the topological Wigner molecule crystal (TWMC) phase is found in the phase diagram.
View Article and Find Full Text PDFPhys Rev Lett
August 2025
Southeast University, Key Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics, Nanjing 21189, China.
Twisting layers provide a rich ore for exotic physics in low dimensions. Despite the abundant discoveries of twistronics from the aspect of electronic structures, ferroic moiré textures are more plain and thus less concerned. Rigid lattice models are straightforward which can give a rough but intuitional description in most cases.
View Article and Find Full Text PDFAdv Sci (Weinh)
August 2025
Key Laboratory of Multiscale Spin Physics, Ministry of Education, School of Physics and Astronomy, Beijing Normal University, Beijing, 100875, P. R. China.
The moiré superlattices have garnered significant attention due to their unique twist-angle-dependent electronic and optical properties. Creating high-quality twisted bilayer structures stands as one of the major frontiers in the study of correlated moiré physical properties, however, which remains a challenge. Here, a cyclical-carrier-gas chemical vapor deposition method is employed to grow high-quality twisted bilayers MoS.
View Article and Find Full Text PDFAdv Mater
August 2025
CIC nanoGUNE, BRTA, Donostia-San Sebastian, Basque Country, 20018, Spain.
Achieving synaptic functionality electronically in a single-element quantum material is a fundamental challenge, as conventional methods rely on the introduction of extrinsic charge-traps or polar components. Here, it is demonstrated that twisted double bilayer graphene (tDBLG) moiré superlattices-composed purely of carbon-exhibit electronic hysteresis and plasticity in presence of twist-angle disorder. Inversion symmetry breaking at the moiré length scales also gives rise to second-order nonlinear electrical response via disorder-mediated extrinsic mechanisms.
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