Category Ranking

98%

Total Visits

921

Avg Visit Duration

2 minutes

Citations

20

Article Abstract

Establishing low-resistance ohmic contact is critical for developing electronic devices based on traditional silicon and new low-dimensional materials. Due to unprecedented electronic and mechanical properties, the one-dimensional carbon nanotubes (CNTs) have been used as source/drain, gate, or tunnel to fabricate transistors. However, the mechanism causing low-resistance ohmic contact is not clear yet. Here, the hybrid atomic force microscopy-scanning electron microscopy (AFM-SEM) instrument was developed to establish lower-resistance ohmic contact between a radial compressed deformed multiwalled CNT bundle and high work function metal (platinum and gold). The radial compression structure under strong van der Waals attraction was in situ characterized through the SEM image to obtain the diameter and width and through AFM to get height and to perform nanoindentation, indicating that Pt has the smaller radial compression deformation. Molecular dynamics simulations exhibit that compared to Pt, a wider ribbon-like graphene layer formed when the radial compressed CNTs contacted with Au. The bond forming and electron orbital overlapping between C atoms of deformed CNTs and the high work function metal atom is beneficial for good electrical contact.

Download full-text PDF

Source
http://dx.doi.org/10.1021/acs.langmuir.3c03395DOI Listing

Publication Analysis

Top Keywords

ohmic contact
16
radial compressed
12
high work
12
work function
12
function metal
12
contact radial
8
cnt bundle
8
bundle high
8
low-resistance ohmic
8
radial compression
8

Similar Publications

Based on the first-principles calculations, we theoretically investigate the electronic structure, interfacial and optical properties of the tellurene/ZnSe (namely α- and γ-Te/ZnSe) van der Waals heterostructures (vdWHs). In the most stable stacking pattern, the α-Te/ZnSe vdWH exhibits an indirect band gap of 0.41 eV and forms a type-I band alignment, while the γ-Te/ZnSe vdWH possesses a p-type Schottky contact with a favorable Schottky barrier height of 0.

View Article and Find Full Text PDF

Single Te Nanoribbon for Disrupting Conventional Sensitivity-Power Limits of Flexible Strain Sensors.

Small

September 2025

State Key Laboratory of Flexible Electronics (LoFE) & Institute of Flexible Electronics (IFE), Northwestern Polytechnical University, 127 West Youyi Road, Xi'an, 710072, P. R. China.

Flexible strain sensors are pivotal for the advancement of robotics, wearable healthcare, and human-machine interaction in the post-Moore era. However, conventional materials struggle to simultaneously achieve high sensitivity, a broad strain range, and low power consumption for cutting-edge applications. In this work, the issue is addressed through single crystal 1D tellurium nanoribbons (NRs), which are synthesized on SiO/Si substrate by hydrogen-assisted chemical vapor deposition (CVD) method.

View Article and Find Full Text PDF

Improving the thermoelectric power factor of PEDOT:PSS with 4,4'-bipyridine and LiBF .

Open Res Eur

August 2025

Department of Industrial Systems Engineering and Design, Universitat Jaume I, Castelló de la Plana, Valencian Community, 12006, Spain.

Background: Thermoelectric (TE) materials can directly convert heat into electricity, which is beneficial for energy sustainability. Organic conducting polymers are TE materials that have drawn significant attention owing to different favorable properties, such as good processability, availability, flexibility, and intrinsically low thermal conductivity. Among the organic TEs, poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS) is the most extensively investigated material because of its stability and high electrical conductivity.

View Article and Find Full Text PDF

Using Density Functional Theory (DFT) calculations, we explored the electronic band structure and contact type (Schottky and Ohmic) at the interface of VS-BGaX (X = S, Se) metal-semiconductor (MS) van der Waals heterostructures (vdWHs). The thermal and dynamical stabilities of the investigated systems were systematically validated using energy-strain analysis, molecular dynamics (AIMD) simulations, as well as binding energy and phonon spectrum calculations. After analyzing the band structure, VS-BGaX (X = S, Se) MS vdWHs metallic behavior with type-III band alignment is revealed.

View Article and Find Full Text PDF

Electrode contact properties with two-dimensional (2D) channel materials decisively determine the nanodevice's overall performance. A recently synthesized semiconducting CuSe monolayer has emerged as a promising candidate for high-performance device channels due to its high carrier mobility, excellent environmental stability, and a reversible thermal-driven phase transition accompanied by a direct-to-indirect band-gap variation. Herein, to identify promising high-quality electrodes for CuSe, the contact properties with various metals (Al, Ag, Au, Ni, and Co), as well as the modulation effects of graphene and -BN interlayers, are systematically investigated based on first-principles calculations.

View Article and Find Full Text PDF