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P2-type NaNiMnO has attracted considerable attraction as a cathode material for sodium-ion batteries owing to its high operating voltage and theoretical specific capacity. However, when the charging voltage is higher than 4.2 V, the NaNiMnO cathode undergoes a detrimental irreversible phase transition of P2-O2, leading to a drastic decrease in specific capacity. To address this challenge, we implemented a Cu-doping strategy (NaNiCuMnO) in this work to stabilize the structure of the transition metal layer. The stabilization strategy involved reinforcing the transition metal-oxygen (TMO) bonds, particularly the MnO bond and inhibiting interlayer slip during deep desodiation. As a result, the irreversible phase transition voltage is delayed, with the threshold voltage increasing from 4.2 to 4.4 V. Ex-situ X-ray diffraction measurements revealed that the NaNiCuMnO cathode maintains the P2 phase within the voltage window of 2.5-4.3 V, whereas the P2-NaNiMnO cathode transforms entirely into O2-type NaNiMnO when the voltage exceeds 4.3 V. Furthermore, absolute P2-O2 phase transition of the NaNiCuMnO cathode occurred at 4.6 V, indicating that Cu doping enhances the stability of the layer structure and increases the threshold voltage. The resulting NaNiCuMnO cathode exhibited superior electrochemical properties, demonstrating an initial reversible specific capacity of 89.1 mAh/g at a rate of 2C (360 mA g) and retaining more than 78 % of its capacity after 500 cycles.
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http://dx.doi.org/10.1016/j.jcis.2023.12.170 | DOI Listing |
Phys Rev Lett
August 2025
RIKEN, Center for Quantum Computing, Wakoshi, Saitama 351-0198, Japan.
Disorder and non-Hermitian effects together can upend how waves localize. In a 1D disordered chain, the non-Hermitian skin effect (NHSE) can induce Anderson delocalization, defying the usual rule that disorder in low dimensions always localizes states. While weak disorder leaves the NHSE intact, strong disorder restores Anderson localization.
View Article and Find Full Text PDFJCI Insight
September 2025
Department of Pharmacology, University of Michigan Medical School, Ann Arbor, Michigan, USA.
Patients with Dravet syndrome (DS) present with severe, spontaneous seizures and ataxia. While most patients with DS have variants in the sodium channel Nav1.1 α subunit gene, SCN1A, variants in the sodium channel β1 subunit gene, SCN1B, are also linked to DS.
View Article and Find Full Text PDFACS Nano
September 2025
Department of Chemical Engineering, Stanford University, Stanford, California 94305, United States.
Integration of ultrathin, high-quality gate insulators is critical to the success of two-dimensional (2D) semiconductor transistors in next-generation nanoelectronics. Here, we investigate the impact of atomic layer deposition (ALD) precursor choice on the nucleation and growth of insulators on monolayer MoS. Surveying a series of aluminum (AlO) precursors, we observe that increasing the length of the ligands reduces the nucleation delay of alumina on monolayer MoS, a phenomenon that we attribute to improved van der Waals dispersion interactions with the 2D material.
View Article and Find Full Text PDFFront Physiol
August 2025
Department of Cardiology, General Hospital of Northern Theater Command, Shenyang, China.
Background: Pulsed electric field ablation (PFA) techniques for treating cardiac arrhythmias have attracted considerable interest. For example, atrial fibrillation can be effectively treated by pulmonary vein isolation using PFA. However, some arrhythmias originate deep within the myocardium, making them difficult to reach with conventional ablation methods.
View Article and Find Full Text PDFJ Colloid Interface Sci
September 2025
School of Electronic Information & Artificial Intelligence, Shaanxi University of Science and Technology, Xi'an 710021, China.
The integration of information memory and computing enabled by nonvolatile memristive device has been widely acknowledged as a critical solution to circumvent the von Neumann architecture limitations. Herein, the Au/NiO/CaBiTiO/FTO (CBTi/NiO) heterojunction based memristor with varying film thicknesses are demonstrated on FTO/glass substrates, and the CBTi/NiO-4 sample shows the optimal memristor characteristics with 5 × 10 stable switching cycles and 10-s resistance state retention. The electrical conduction in the low-resistance state is dominated by Ohmic behavior, while the high-resistance state exhibited characteristics consistent with the space-charge-limited conduction (SCLC) model.
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