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Conventional spectroscopies are not sufficiently selective to comprehensively understand the behaviour of trapped carriers in perovskite solar cells, particularly under their working conditions. Here we use infrared optical activation spectroscopy (i.e., pump-push-photocurrent), to observe the properties and real-time dynamics of trapped carriers within operando perovskite solar cells. We compare behaviour differences of trapped holes in pristine and surface-passivated FACsPbI devices using a combination of quasi-steady-state and nanosecond time-resolved pump-push-photocurrent, as well as kinetic and drift-diffusion models. We find a two-step trap-filling process: the rapid filling (~10 ns) of low-density traps in the bulk of perovskite, followed by the slower filling (~100 ns) of high-density traps at the perovskite/hole transport material interface. Surface passivation by n-octylammonium iodide dramatically reduces the number of trap states (~50 times), improving the device performance substantially. Moreover, the activation energy (~280 meV) of the dominant hole traps remains similar with and without surface passivation.
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http://dx.doi.org/10.1038/s41467-023-43852-5 | DOI Listing |
Chem Sci
August 2025
Department of Chemistry and Biochemistry, Auburn University Auburn Alabama 36849 USA
Organic mixed ionic-electronic conducting polymers remain at the forefront of materials development for bioelectronic device applications. During electrochemical operation, structural dynamics and variations in electrostatic interactions in the polymer occur, which affect dual transport of the ions and electronic charge carriers. Such effects remain unclear due to a lack of spectroscopic methods capable of capturing these dynamics, which hinders the rational design of higher-performance polymers.
View Article and Find Full Text PDFNanoscale
September 2025
Department of Chemistry, Utkal University, Vani Vihar, Bhubaneswar, 751004, India.
Designing heterostructure-based nanocomposites has gained considerable interest in solving energy scarcity and environmental contamination issues. Herein, a heterojunction assembly of ternary SnS/MoS/g-CN nanocomposites with varying Sn and Mo weight ratios was synthesized through a single-step hydrothermal method. At an optimized ratio of tin to molybdenum (1 : 2), denoted as SM-3, promising electrochemical and photocatalytic performances were observed compared to bare SnS/g-CN and MoS/g-CN.
View Article and Find Full Text PDFChemphyschem
September 2025
Key Laboratory of Advanced Structural Materials, Ministry of Education, School of Materials Science and Engineering, Changchun University of Technology, Changchun, Jilin, 130012, China.
Polymer resistive random-access memory (RRAM) holds great promise for flexible wearable electronics and artificial intelligence, yet its development is hindered by chain entanglement and intermolecular interactions, leading to processing challenges, high operating voltages, and unstable switching parameters. Herein, metal-porphyrin-terminated hyperbranched polyimides (ATPP@HBPI, (Zn)ATPP@HBPI, and (Cu)ATPP@HBPI) were synthesized. The hyperbranched structure mitigates intermolecular interactions, while ionic doping modulates conductivity, and the synergistic effect of ions and electrons optimizes resistive switching behavior.
View Article and Find Full Text PDFIn Silico Pharmacol
August 2025
Department of Chemistry, Kwame Nkrumah University of Science and Technology, Kumasi, Ghana.
Abstract: Malaria remains a critical global health challenge due to rising resistance. Natural products are a rich source of novel antimalarials; extracts of (SD) have shown potent antiplasmodial effects. Here, three -derived isolates: SD03 (benzyl 2-methoxybenzoate), SD04 (1,10-dihydroxy-6H-benzo[c]chromen-6-one) and SD05 (8-hydroxy-3,4-dimethoxydibenzo[b,d]furan-1-carboxylic acid) were investigated to identify their molecular target.
View Article and Find Full Text PDFACS Nano
September 2025
IMEC, Kapeldreef 75, 3001 Leuven, Belgium.
Heavy-metal-free III-V semiconductor-based colloidal quantum dots (CQDs), such as InAs, are promising candidates for near- and short-wave infrared detection. However, up-to-date research efforts remain mainly limited to wavelengths below 1100 nm due to challenges in synthesis, junction formation, and passivation for large diameter InAs quantum dots. Systematic investigations into device design, reverse dark current mechanisms, and trap distributions in larger InAs quantum dots remain limited.
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