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We discover a deep connection between parity-time symmetric optical systems and quantum transport in one-dimensional fermionic chains in a two-terminal open system setting. The spectrum of one dimensional tight-binding chain with periodic on-site potential can be obtained by casting the problem in terms of 2×2 transfer matrices. We find that these non-Hermitian matrices have a symmetry exactly analogous to the parity-time symmetry of balanced-gain-loss optical systems, and hence show analogous transitions across exceptional points. We show that the exceptional points of the transfer matrix of a unit cell correspond to the band edges of the spectrum. When connected to two zero temperature baths at two ends, this consequently leads to subdiffusive scaling of conductance with system size, with an exponent 2, if the chemical potential of the baths are equal to the band edges. We further demonstrate the existence of a dissipative quantum phase transition as the chemical potential is tuned across any band edge. Remarkably, this feature is analogous to transition across a mobility edge in quasiperiodic systems. This behavior is universal, irrespective of the details of the periodic potential and the number of bands of the underlying lattice. It, however, has no analog in absence of the baths.
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http://dx.doi.org/10.1103/PhysRevLett.130.187101 | DOI Listing |
J Phys Condens Matter
September 2025
Physics, Birla Institute of Technology and Science - Pilani Campus, Department of Physics, Birla Institute of Technology and Science, Pilani, Pilani Campus, Vidya Vihar, Pilani, RJ, 333031, INDIA.
We investigate the transport properties of a two-dimensional Su-Schrieffer-Heeger (2D SSH) model in the quantum Hall regime using non-equilibrium Green's function formalism (NEGF). The device Hamiltonian, where the 2D SSH model serves as the channel, is constructed using a nearest-neighbor tight-binding model. The effect of an external perpendicular magnetic field is incorporated into the contacts via Peierls substitution.
View Article and Find Full Text PDFAdv Mater
August 2025
Key Laboratory of Superlight Materials and Surface Technology, Ministry of Education, College of Materials Science and Chemical Engineering, Harbin Engineering University, Harbin, 150001, P. R. China.
Thermoelectric technology, a rapidly advancing field in medical therapy, encounters challenges in achieving efficient thermal and electrical transport properties within the limited thermal range compatible with biological systems. This study presents a high-performance thermoelectric catalytic therapy (TECT) utilizing Cu self-doped CuZnSnSe nanosheets synthesized with non-stoichiometric ratios modified with DSPE-mPEG (n-CZTSe@PEG NSs). Under 808 nm laser irradiation, n-CZTSe@PEG NSs demonstrate an impressive photothermal conversion efficiency of 47.
View Article and Find Full Text PDFSensors (Basel)
August 2025
WiLab, CNIT/DEI, University of Bologna, 40136 Bologna, Italy.
Vehicle-to-vehicle (V2V) and vehicle-to-network (V2N) communications are two key components of intelligent transport systems (ITSs) that can share spectrum resources through in-band overlay. V2V communication primarily supports traffic safety, whereas V2N primarily focuses on infotainment and information exchange. Achieving reliable V2V transmission alongside high-rate V2N services in resource-constrained, dynamically changing traffic environments poses a significant challenge for resource allocation.
View Article and Find Full Text PDFNanotechnology
September 2025
Innovation Center for Gallium Oxide Semiconductor (IC-GAO), College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, People's Republic of China.
Gallium oxide (GaO)-based solar-blind ultraviolet photodetectors gained much attention for their promising prospects in new-generation solid-state optoelectronics and electronics. Catering for the demands of broadband photodetection, tunable energy-band, adjusted carrier concentration and effective carrier transition, alloying engineering through doping is gradually launched as one of the research emphases. This review is proposed to understand the photodetection performances in view of energy-band engineering.
View Article and Find Full Text PDFJ Phys Condens Matter
September 2025
School of Mathematics and Physics, China University of Geosciences, Wuhan 430074, People's Republic of China.
Due to the high dielectric constant and wide band gap, ZrOhas become a widely used gate dielectric material in complementary metal-oxide-semiconductor devices, and the ZrO/Si interface plays a critical role in determining overall device performance. In this work, we systematically study the effects of oxygen vacancy defects on the band structure, band offset, and charge transfer in cubic ZrO/Si (c-ZrO/Si) interface structure. Our results reveal that the constructed (c-ZrO)/(Si)interface is an indirect band gap semiconductor, with the band edges contributed by Si and a band offset greater than 2 eV.
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