Energy-band engineering and deep-ultraviolet photodetection of GaOalloys: a concise review.

Gallium oxide (GaO)-based solar-blind ultraviolet photodetectors gained much attention for their promising prospects in new-generation solid-state optoelectronics and electronics. Catering for the demands of broadband photodetection, tunable energy-band, adjusted carrier concentration and effective carrier transition, alloying engineering through doping is gradually launched as one of the research emphases. This review is proposed to understand the photodetection performances in view of energy-band engineering.

Continuous Tunable Energy Band Tailoring Boosts Extending the Sensing of the Waveband Based on (InGa)O Solar-Blind Photodetectors.

Rising wide bandgap semiconductor gallium oxide (GaO) displays huge potential in performing solar-blind photodetection, with constraint in narrow detection wavebands in nature, whereas bandgap modulation through the introduction of exotic atoms into GaO has an essential effect on the tunable performance of photodetectors and the detection waveband. Here, a novel method for the preparation of (InGa)O alloy films is proposed, and the continuous tuning of the bandgap in the range of 3.70-4.

Self-powered solar-blind detector array based on ε-GaO Schottky photodiodes for dual-mode binary UV communication.

In this work, a solar-blind UV metal-semiconductor Schottky photodiode array is constructed by using metalorganic chemical vapor deposition grown ε-GaO thin film, possessing high-performance and self-powered characteristics, toward dual-mode (self-powered and biased modes) binary light communication. For the array unit, the responsivity, specific detectivity, and external quantum efficiency are 30.8 A/W/6.

Tunable GaOsolar-blind photosensing performance via thermal reorder engineering and energy-band modulation.

As an ultra-wide bandgap semiconductor, gallium oxide (GaO) has been extensively applied in solar-blind photodetectors (PDs) owing to the absorbance cut-off wavelength of shorter than 280 nm, and the optimized technologies of detection performance is seriously essential for its further usages. Herein, a feasible thermal reorder engineering method was performed through annealing GaOfilms in vacuum, Oand oxygen plasma atmospheres, realizing to tune solar-blind photosensing performance of GaOPDs. Thermal treatment, in fact a crystal reorder process, significantly suppressed the noise in GaO-based PDs and enhanced the photo-sensitivity, with the dark current decreasing from 154.

Multi-pixels gallium oxide UV detector array and optoelectronic applications.

With the continuous advancement of deep-ultraviolet (DUV) communication and optoelectronic detection, research in this field has become a significant focal point in the scientific community. For more accurate information collection and transport, the photodetector array of many pixels is the key of the UV imaging and commnication systems, and its photoelectric performance seriously depends on semiconductor material and array layout. Gallium oxide (GaO) is an emerging wide bandgap semicondutor material which has been widely used in DUV dectection.