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Reactive metal-support interactions (RMSIs) induce the formation of bimetallic alloys and offer an effective way to tune the electronic and geometric properties of metal sites for advanced catalysis. However, RMSIs often require high-temperature reductions (>500 °C), which significantly limits the tuning of bimetallic compositional varieties. Here, we report that an atomically thick GaO coating of Pd nanoparticles enables the initiation of RMSIs at a much lower temperature of ∼250 °C. State-of-the-art microscopic and spectroscopic studies disclose that low-temperature RMSIs initiate the formation of rarely reported Ga-rich PdGa alloy phases, distinct from the PdGa phase formed in traditional Pd/GaO catalysts after high-temperature reduction. In the CO hydrogenation reaction, the Ga-rich alloy phases impressively boost the formation of methanol and dimethyl ether ∼5 times higher than that of Pd/GaO. infrared spectroscopy reveals that the Ga-rich phases greatly favor formate formation as well as its subsequent hydrogenation, thus leading to high productivity.
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http://dx.doi.org/10.1021/jacs.2c12046 | DOI Listing |
ACS Appl Mater Interfaces
September 2025
Division of Nano Life Science, Kanazawa University, Kakuma-machi, 920-1192 Kanazawa, Japan.
Atomic force microscopy (AFM) imaging of ionic liquid (IL) distribution in electric double-layer (EDL) devices has been actively explored to understand the origin of their excellent performance. However, this has been impeded by insufficient resolution or a poor understanding of the mechanisms of 3D IL imaging. Here, we overcome these difficulties using 3D scanning force microscopy (3D-SFM) with variable tip/sample bias voltages for visualizing 3D ,-diethyl--methyl--(2-methoxyethyl)ammonium bis(trifluoromethanesulfonyl)imide (DEME-TFSI) distributions on a Au electrode in EDL capacitors.
View Article and Find Full Text PDFSci Adv
September 2025
National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
Two-dimensional (2D) materials offer strong light-matter interaction and design flexibility beyond bulk semiconductors, but an intrinsic limit is the low absorption imposed by the atomic thickness. A long-sought-after goal is to achieve complementary absorption enhancement through energy transfer (ET) to break this limit. However, it is found challenging due to the competing charge transfer (CT) process and lack of resonance in exciton states.
View Article and Find Full Text PDFACS Appl Mater Interfaces
September 2025
Nanoelectronics Graphene and 2D Materials Laboratory, CITIC-UGR, Department of Electronics, University of Granada, Granada 18014, Spain.
The relentless scaling of semiconductor technology demands materials beyond silicon to sustain performance improvements. Transition metal dichalcogenides (TMDs), particularly MoS, offer excellent electronic properties; however, achieving scalable and CMOS-compatible fabrication remains a critical challenge. Here, we demonstrate a scalable and BEOL-compatible approach for the direct wafer-scale growth of MoS devices using plasma-enhanced atomic layer deposition (PE-ALD) at temperatures below 450 °C, fully compliant with CMOS thermal budgets.
View Article and Find Full Text PDFAngew Chem Int Ed Engl
September 2025
Inorganic Materials Chemistry, Ruhr University Bochum, Universitätsstr. 150, 44801, Bochum, Germany.
Lithium is the core material of modern battery technologies and fabricating the lithium-containing materials with atomic layer deposition (ALD) confers significant benefits in control of film composition and thickness. In this work, a new mononuclear N-heterocyclic carbene (NHC) stabilized lithium complex, [Li(NHC)(hmds)], is introduced as a promising precursor for ALD of lithium-containing thin films. Structural characterization is performed, comparing density functional theory (DFT) and single-crystal X-ray diffraction (SC-XRD), confirming a rare mononuclear structure.
View Article and Find Full Text PDFAdv Mater
September 2025
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.
Atomically thin 2D layered ferroelectric semiconductors, where polarization switching transpires within the channel material itself, are pivotal to advancing the next generation of high-performance electronics. Nevertheless, the challenge remains in either the controllable synthesis of films or the manipulation of associated ferroelectricity. Here, 2D p-type BiCuSeO (BCSO) films with a thickness down to ≈3 nm are successfully synthesized using molecular beam epitaxy.
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