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Article Abstract
Embedded three-dimensional (3-D) metal-insulator-metal (MIM) decoupling capacitors with high-κ dielectric films of high capacitance and long-life time are increasingly needed on integrated chips. Towards achieving better electrical performance, there is a need for investigation into the influence of the variation in atomic layer deposition (ALD) parameters used for thin high-κ dielectric films (10 nm) made of AlO-doped ZrO. This variation should always be related to the structural uniformity, the electrical characteristics, and the electrical reliability of the capacitors. This paper discusses the influence of different Zr precursor pulse times per ALD cycle and deposition temperatures (283 °C/556 K and 303 °C/576 K) with respect to the capacitance density (C-V), voltage linearity and leakage current density (I-V). Moreover, the dielectric breakdown and TDDB characteristics are evaluated under a wide range of temperatures (223-423 K).
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| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC9738140 | PMC |
| http://dx.doi.org/10.3390/ma15238325 | DOI Listing |
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