BaTiO-Ni Flexible Thin-Film Capacitor via Photoassisted Chemical Solution Deposition Retaining Pristine Ni Foil Elasticity and Hardness.

The direct deposition of piezoelectric ceramic thin films onto metal foils has become a significant challenge due to the increasing demand for embedded decoupling capacitors, nanogenerators, and flexible piezo-sensors. However, traditional thermal sintering (TS) methods present several issues for metal foils, including alterations in mechanical properties, the formation of wrinkles, and the need for precise control over the sintering atmosphere to prevent oxidation. In this study, we successfully crystallized BaTiO on a Ni foil under atmospheric conditions, mitigating thermal damage to the foil through a hybrid-solution-incorporated photoassisted chemical solution deposition (HS-PCSD) method.

A strategy for increasing the breakdown field strength beyond the experimental scaling law in yttria films.

Aiming to increase the dielectric breakdown field strength () of yttria films for application in semiconductor manufacturing, a synthetic strategy based on photo-assisted chemical solution deposition was developed to prepare yttria films with aggregates of very small nanocrystallites. Despite containing many elliptical pores, the films exhibited an exceeding 12.7 MV cm, much higher than that predicted according to conventional experimental scaling laws.

Key Sputtering Parameters for Precursor InO Films to Achieve High Carrier Mobility.

Owing to their extremely high carrier mobility (μ) of >100 cm/(V s) and suitable low carrier concentrations, transparent conducting films of solid-phase crystallized H-doped InO (spc-IO:H) exhibit high conductivity with high optical transparency over a broad frequency range. These properties can be attributed to solid-phase crystallization of the amorphous precursor film. Therefore, the development of high-quality spc-IO:H films requires the deposition conditions of the precursor films to be optimized.

The Real-Time Monitoring of the Laser-Induced Functionalization of Transparent Conductive Oxide Films.

Laser-induced functionalization using excimer laser irradiation has been widely applied to transparent conductive oxide films. However, exploring suitable irradiation conditions is time-consuming and cost-ineffective as there are numerous routine film fabrication and analytical processes. Thus, we herein explored a real-time monitoring technique of the laser-induced functionalization of transparent conductive oxide films.

Improvement of the Properties of Direct-Current Magnetron-Sputtered Al-Doped ZnO Polycrystalline Films Containing Retained Ar Atoms Using 10-nm-Thick Buffer Layers.

The use of a 10-nm-thick buffer layer enabled tailoring of the characteristics, such as film deposition and structural and electrical properties, of magnetron-sputtered Al-doped ZnO (AZO) films containing unintentionally retained Ar atoms. The AZO films were deposited on glass substrates coated with the buffer layer via direct-current magnetron sputtering using Ar gas, a substrate temperature of 200 °C, and sintered AZO targets with an AlO content of 2.0 wt %.

Characteristics of Carrier Transport and Crystallographic Orientation Distribution of Transparent Conductive Al-Doped ZnO Polycrystalline Films Deposited by Radio-Frequency, Direct-Current, and Radio-Frequency-Superimposed Direct-Current Magnetron Sputtering.

We investigated the characteristics of carrier transport and crystallographic orientation distribution in 500-nm-thick Al-doped ZnO (AZO) polycrystalline films to achieve high-Hall-mobility AZO films. The AZO films were deposited on glass substrates at 200 °C by direct-current, radio-frequency, or radio-frequency-superimposed direct-current magnetron sputtering at various power ratios. We used sintered AZO targets with an Al₂O₃ content of 2.

High-Hall-Mobility Al-Doped ZnO Films Having Textured Polycrystalline Structure with a Well-Defined (0001) Orientation.

Five hundred-nanometer-thick ZnO-based textured polycrystalline films consisting of 490-nm-thick Al-doped ZnO (AZO) films deposited on 10-nm-thick Ga-doped ZnO (GZO) films exhibited a high Hall mobility (μ H) of 50.1 cm(2)/Vs with a carrier concentration (N) of 2.55 × 10(20) cm(-3).