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Traditional contact voltage measurement requires a direct electrical connection to the system, which is not easy to install and maintain. The voltage measurement based on the electric field coupling plate capacitance structure does not need to be in contact with the measured object or the ground, which can avoid the above problems. However, most of the existing flat-plate structure voltage measurement sensors are not only expensive to manufacture, but also bulky, and when the relative position between the wire under test and the sensor changes, it will bring great measurement errors, making it difficult to meet actual needs. Aiming to address the above problems, this paper proposes a multi-electrode array structure non-contact voltage sensor and signal processing algorithm. The sensor is manufactured by the PCB process, which effectively reduces the manufacturing cost and process difficulty. The experimental and simulation results show that, when the relative position of the wire and the sensor is offset by 10 mm in the 45° direction, the relative error of the traditional single-electrode voltage sensor is 17.62%, while the relative error of the multi-electrode voltage sensor designed in this paper is only 0.38%. In addition, the ratio error of the sensor under the condition of power frequency of 50 Hz is less than ±1% and the phase difference is less than 4°. The experimental results show that the sensor has good accuracy and linearity.
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http://dx.doi.org/10.3390/s22218573 | DOI Listing |
Elife
September 2025
Department of Chemistry, University of Massachusetts, Amherst, United States.
Voltage-dependence gating of ion channels underlies numerous physiological and pathophysiological processes, and disruption of normal voltage gating is the cause of many channelopathies. Here, long timescale atomistic simulations were performed to directly probe voltage-induced gating transitions of the big potassium (BK) channels, where the voltage sensor domain (VSD) movement has been suggested to be distinct from that of canonical Kv channels but remains poorly understood. Using a Core-MT construct without the gating ring, multiple voltage activation transitions were observed at 750 mV, allowing detailed analysis of the activated state of BK VSD and key mechanistic features.
View Article and Find Full Text PDFSci Technol Adv Mater
August 2025
Department of Mechanical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, South Korea.
Heat flux sensors based on the anomalous Nernst effect (ANE) have emerged as a promising solution for achieving thin and flexible designs. ANE-based heat flux sensors typically employ thermopile structures composed of two ANE materials with opposite signs, connected in series to enhance sensing performance. However, a mismatch in the Seebeck coefficient between the two ANE materials causes a considerable offset voltage due to the Seebeck effect (SE) under oblique heat flux.
View Article and Find Full Text PDFAdv Sci (Weinh)
September 2025
Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, Daejeon, 34114, Republic of Korea.
Molybdenum disulfide (MoS) has recently emerged as a promising material for the development of triboelectric nanogenerators (TENGs) owing to its inherently negative triboelectric properties when paired with polymeric layers, along with its notable transparency and mechanical flexibility. However, MoS-based TENGs operating in the contact-separation mode encounter critical limitations, including mechanical wear and limited triboelectric performance, particularly within the constraints of conventional 2D geometries. This paper reports the novel one-step laser-assisted synthesis of hemispherical MoS through the controlled nucleation and growth of MoS precursor seeds.
View Article and Find Full Text PDFACS Omega
August 2025
Laboratoire Matériaux Avancés et Phénomènes Quantiques, Faculté des Sciences de Tunis, Université de Tunis El Manar, Campus Universitaire, Tunis 2092, Tunisia.
This paper reports the use of P18-8, a novel conjugated polymer combining poly-(1,4-phenylene-ethynylene) and poly-(1,4-phenylene-vinylene), in the fabrication of an organic diode with the structure ITO/PEDOT:PSS/P18-8/LiF/Al. The electrical properties of the fabricated device were characterized using impedance spectroscopy across a frequency range of 100 Hz to 1 MHz at various applied voltages. The current density-voltage (-) characteristic exhibited ohmic behavior at low applied voltages, while at higher voltages, it conformed to the space charge limited current (SCLC) theory.
View Article and Find Full Text PDFAdv Sci (Weinh)
September 2025
State Key Laboratory of Powder Metallurgy, Central South University, Changsha, 410083, China.
Digital light processing (DLP) presents a promising approach for fabricating intricately designed piezoelectric components, which are essential for developing high-sensitivity piezoelectric sensor systems. However, the inherent layer-by-layer stacking nature of DLP induces interlayer cracking in printed ceramics, which severely deteriorates their performance. This work introduces an innovative interfacial engineering strategy to print superlattice components with exceptional piezoelectric performance.
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