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We introduce herein an effective way for continuous delivery and position-switchable trapping of nanoparticles via field-effect control on hybrid electrokinetics (HEK). Flow field-effect transistor exploiting HEK delicately combines horizontal linear electroosmosis and transversal nonlinear electroosmosis of a shiftable flow stagnation line (FSL) on gate terminals under DC-biased AC forcing. The microfluidic nanoparticle concentrator proposed herein makes use of a simple device geometry, in which an individual or a series of planar metal strips serving as gate electrode (GE) are subjected to a hybrid gate voltage signal and arranged in parallel between a pair of 3D driving electrodes. On the application of a DC-biased AC electric field across channel length direction, all the GE are electrochemically polarized, and the action of imposed hybrid electric field on the multiple-frequency bipolar counterions within the composite-induced double layer generates two counter-rotating induced-charge electroosmotic (ICEO) micro-vortices on top of each GE. Symmetry breaking in ICEO flow profile occurs once the gate voltage deviates from natural floating potential of corresponding GE. The gate voltage offset not only results in an additional pump motion of working fluid for enhanced electroosmotic transport but also directly changes the location of FSL where nanoparticles are preferentially collected by field-effect HEK. Our results of field-effect control on HEK are supposed to guide an elaborate design of flexible electrokinetic frameworks embedding coplanar metal strips for a high degree of freedom analyte manipulation in modern micro-total-analytical systems.
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http://dx.doi.org/10.1002/elps.202200146 | DOI Listing |
Nanoscale
September 2025
School of Chemistry and Chemical Engineering, Chongqing University, Chongqing, 401331, China.
Chemical doping has emerged as a powerful approach for modulating the electronic properties of graphene, and particularly for enabling its integration into advanced electronic and optoelectronic devices. While considerable progress has been made in achieving stable p-type doping, realizing efficient and reliable n-type doping remains a greater challenge due to the inherent instability of most electron-donating dopants and intrinsic semi-metallic nature of pristine graphene. This review summarises the recent developments in n-type chemical doping of graphene films, with a primary focus on substitutional doping and surface charge transfer mechanisms.
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September 2025
Department of System Semiconductor Engineering and Department of Materials Science and Engineering, Yonsei University, Seoul, 03722, South Korea.
2D materials have emerged as promising candidates for next-generation field-effect transistors (FETs) owing to the atomically thin geometry and excellent electrostatic gate control. Here, double-gate vertical sidewall FETs based on chemical vapor deposition-grown monolayer WS are demonstrated and, for the first time, report vertical multi-channel nanosheet FETs (NSFETs). By implementing a dual-step sidewall profile, steep SiO surfaces are obtained, which enabled seamless WS adhesion and contributed to enhanced device yield.
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September 2025
School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China.
Conventional semiconductor manufacturing relies on top-down lithography, which faces fundamental limitations in resolution, material versatility, and cost at the nanoscale. While bottom-up colloidal strategies offer alternative pathways, they are constrained by ligand contamination and insufficient precision for integrated circuits. Here a gas-phase synthesis and assembly platform is reported that overcomes these challenges by combining plasma-generated, stabilizer-free semiconductor nanoparticles (NPs) with electric-field-guided 3D nanoprinting.
View Article and Find Full Text PDFNanotechnology
August 2025
Electrical and Computer Engineering, University of Sao Paulo Sao Carlos School of Engineering, Caixa Postal 359, CEP: 13560-590, Sao Carlos- SP, São Carlos, SP, 13566-590, BRAZIL.
This review addresses the compact modelling strategies for field-effect transistors based on two-dimensional materials (2D-FETs), which offer excellent electrostatic control and strong scaling potential thanks to their atomically thin channels. Achieving the integration of 2D-FETs into high-density circuits demands accurate compact models, beyond those established for silicon MOSFETs. We discuss the characteristics of the main 2D material suitable for nanoelectronics and examine the main modelling approaches and challenges, with a focus on top-gated devices and transport regimes spanning from diffusive to ballistic.
View Article and Find Full Text PDFNat Mater
September 2025
National Key Laboratory of Advanced Micro and Nano Manufacture Technology, Department of Micro/Nano Electronics, School of Integrated Circuits, Shanghai Jiao Tong University, Shanghai, China.
Black phosphorus nanoribbons (BPNRs) with a tunable bandgap and intriguing electronic and optical properties hold strong potential for logic applications. However, efficiently producing high-quality BPNRs with precise control over their size and structure remains a great challenge. Here we achieved high-quality, narrow and clean BPNRs with nearly atomically smooth edges and well-defined edge orientation at high yield (up to ~95%) through the sonochemical exfoliation of the synthesized bulk BP crystals with a slightly enlarged lattice parameter along the armchair direction.
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