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High-performance photodetecting materials with intrinsic stretchability and colour sensitivity are key requirements for the development of shape-tunable phototransistor arrays. Another challenge is the proper compensation of optical aberrations and noises generated by mechanical deformation and fatigue accumulation in a shape-tunable phototransistor array. Here we report rational material design and device fabrication strategies for an intrinsically stretchable, multispectral and multiplexed 5 × 5 × 3 phototransistor array. Specifically, a unique spatial distribution of size-tuned quantum dots, blended in a semiconducting polymer within an elastomeric matrix, was formed owing to surface energy mismatch, leading to highly efficient charge transfer. Such intrinsically stretchable quantum-dot-based semiconducting nanocomposites enable the shape-tunable and colour-sensitive capabilities of the phototransistor array. We use a deep neural network algorithm for compensating optical aberrations and noises, which aids the precise detection of specific colour patterns (for example, red, green and blue patterns) both under its flat state and hemispherically curved state (radius of curvature of 18.4 mm).
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http://dx.doi.org/10.1038/s41565-022-01160-x | DOI Listing |
Sci Rep
September 2025
Faculty of Physics, University of Tabriz, Tabriz, 51665-163, Iran.
Recent advances in nanostructured photodetectors have enabled precise control over light absorption while minimizing photon losses. In this work, we demonstrate a plasmonic metamaterial absorber based on two-dimensional MXene (Ti₃C₂Tₓ) featuring geometrically tunable tetragram-shaped arrays. Through finite-difference time-domain (FDTD) simulations and structural optimization, we achieved over 90% photon absorption across the broadband spectral range of 1000-2500 nm, representing a significant enhancement in operational bandwidth.
View Article and Find Full Text PDFAdv Sci (Weinh)
August 2025
School of Materials Science and Engineering, Zhengzhou University, Zhengzhou, 450001, China.
Precise patterning of small-molecule semiconductive crystals without external chemical additives remains a significant challenge. Herein, intrinsic photo-crosslinkable semiconductive small-molecule crystals (i-PSSCs) are designed and synthesized by associating [1]benzothieno[3,2-b]benzothiophene core with diacetylene-ended groups. The i-PSSCs undergo self-crosslinking directly upon UV light irradiation to yield micron-scale patterned crystalline films through a combination of photo-crosslinking and solvent rinsing.
View Article and Find Full Text PDFSmall
August 2025
Department of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, 16419, Republic of Korea.
This study introduces an optoelectronic platform designed for high-accuracy detection and classification of Toxic Industrial Chemicals (TICs), addressing key limitations of conventional Leak Detection and Repair (LDAR) systems. The system integrates colorimetric sensor membranes (CSMs) with a 3 × 3 IGZO phototransistor array, enabling the conversion of gas-induced color variations into electrical signals for reliable TIC identification. Applying a multi-power sensing approach with three distinct laser intensities (0.
View Article and Find Full Text PDFAdv Mater
August 2025
School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei, 230026, China.
The development of tunable and highly controllable photoconductive devices for brain-inspired optical neuromorphic systems remains challenging. Previous neuromorphic devices are limited by asymmetric and nonlinear conductive properties, which impose specific restrictions on training tasks and weight learning rules in dynamic and complex visual environments. A programmable synaptic transistor based on a Se@SWCNT 1D van der Waals heterojunction, enabling gate-controlled positive and negative responses is presented.
View Article and Find Full Text PDFACS Appl Mater Interfaces
July 2025
Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, Fujian, China.
Phototransistors based on GaO are widely used in civil or military applications as a three-terminal device with solar-blind characteristics. This study constructed amorphous gallium oxide (a-GaO) thin film transistor (TFT)-based solar-blind photodetectors and explored the effect of the oxygen partial pressure on films and devices. It had been found that there is a strong correlation between oxygen partial pressure and photodetector properties.
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