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Ultrafast light-matter interactions present a promising route to control ferroelectric polarization at room temperature, which is an exciting idea for designing novel ferroelectric-based devices. One emergent light-induced technique for controlling polarization consists in anharmonically driving a high-frequency phonon mode through its coupling to the polarization. A step towards such control has been recently accomplished, but the polarization has been reported to be only partially reversed and for a short lapse of time. Such transient partial reversal is not currently understood, and it is presently unclear if full control of polarization, by, e.g., fully reversing it or even making it adopt different directions (thus inducing structural phase transitions), can be achieved by activating the high-frequency phonon mode via terahertz pulse stimuli. Here, by means of realistic simulations of a prototypical ferroelectric, we reveal and explain (1) why a transient partial reversal has been observed, and (2) how to deterministically control the ferroelectric polarization thanks to these stimuli. Such results can provide guidance for realizing original ultrafast optoferroic devices.
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http://dx.doi.org/10.1038/s41467-022-30324-5 | DOI Listing |
J Phys Chem Lett
September 2025
Materials Genome Institute, School of Materials and Energy, Yunnan University, Kunming 650091, P. R. China.
Magnetic two-dimensional van der Waals (vdWs) materials hold potential applications in low-power and high-speed spintronic devices due to their degrees of freedom such as valley and spin. In this Letter, we propose a mechanism that uses stacking engineering to control valley polarization (VP), ferroelectricity, layer polarization (LP), and magnetism in vdWs bilayers. Through first-principles calculations, we predict that the T-VSI monolayer is a magnetic semiconductor with a sizable VP.
View Article and Find Full Text PDFNano Lett
September 2025
School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China.
Multijunction photoelectrodes, which generate active photocarriers with sufficient energy to drive unassisted solar-fuel conversion, represent a promising avenue for sustainable energy applications. However, achieving controllable p/n-type doping and high-quality growth remains a challenge for most emerging metal oxide semiconductors. In this study, we demonstrate the creation of in-plane ferroelectric p/n homojunction superstructures in BiFeO (BFO) films, enabling bias-free photoelectrochemical (PEC) reactions.
View Article and Find Full Text PDFAdv Mater
September 2025
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.
Atomically thin 2D layered ferroelectric semiconductors, where polarization switching transpires within the channel material itself, are pivotal to advancing the next generation of high-performance electronics. Nevertheless, the challenge remains in either the controllable synthesis of films or the manipulation of associated ferroelectricity. Here, 2D p-type BiCuSeO (BCSO) films with a thickness down to ≈3 nm are successfully synthesized using molecular beam epitaxy.
View Article and Find Full Text PDFNat Commun
September 2025
National Key Laboratory of Advanced Micro and Nano Manufacture Technology, Shanghai Jiao Tong University, Shanghai, China.
The polarization switching pathway in HfZrO-based ferroelectric thin film is still not well clarified and agreed, limiting the fundamental physical understanding and performance engineering. The key question lies in clarifying the transient intermediate state during the polarization switching of orthorhombic phase. In this work, by designing the ferroelectric and dielectric stacks, we theoretically and experimentally demonstrate a polarization switching pathway through an orthorhombic-tetragonal-orthorhombic phase transition in ferroelectric HfZrO where the non-polar tetragonal phase is metastable.
View Article and Find Full Text PDFiScience
September 2025
Department of Applied Physics, School of Engineering Sciences, KTH Royal Institute of Technology, AlbaNova University Center, SE-10691 Stockholm, Sweden.
The ability to efficiently control topological magnetism is crucial for advancing technological applications and deepening our understanding of magnetic systems. Although emerging van der Waals (vdW) multiferroics present a promising frontier for energy-efficient spin manipulation, the control of topological magnetism remains challenging due to its scarcity in multiferroics. Here, we demonstrate that highly tunable merons and antimerons emerge in monolayer multiferroic (CCPS).
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