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Oxidation of graphitic materials has been studied for more than a century to synthesize materials such as graphene oxide, nanoporous graphene, and to cut or unzip carbon nanotubes. However, the understanding of the early stages of oxidation is limited to theoretical studies, and experimental validation has been elusive. This is due to (i) challenging sample preparation for characterization because of the presence of highly mobile and reactive epoxy groups formed during oxidation, and (ii) gasification of the functional groups during imaging with atomic resolution, e.g., by transmission electron microscopy. Herein, we utilize a low-temperature scanning tunneling microscope (LT-STM) operating at 4 K to solve the structure of epoxy clusters form upon oxidation. Three distinct nanostructures corresponding to three stages of evolution of vacancy defects are found by quantitatively verifying the experimental data by the van der Waals density functional theory. The smallest cluster is a cyclic epoxy trimer. Their observation validates the theoretical prediction that epoxy trimers minimize the energy in the cyclic structure. The trimers grow into honeycomb superstructures to form larger clusters (1-3 nm). Vacancy defects evolve only in the larger clusters (2-3 nm) in the middle of the cluster, highlighting the role of lattice strain in the generation of vacancies. Semiquinone groups are also present and are assigned at the carbon edge in the vacancy defects. Upon heating to 800 °C, we observe cluster-free vacancy defects resulting from the loss of the entire epoxy population, indicating a reversible functionalization of epoxy groups.
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http://dx.doi.org/10.1021/jacsau.1c00570 | DOI Listing |
ACS Nano
September 2025
Department of Physics, University of Texas at Austin, Austin, Texas 78712, United States.
Atomic point defects provide an alternative tuning knob for engineering the properties and functionality of 2D transition metal dichalcogenides (TMDs). Prior to engineering point defects to tailor material properties, identification and investigation of their electronic structure is key to their implementation for device applications. The two most common atomic point defects in monolayer WS are sulfur vacancies and oxygen substituents, which have been thoroughly reported on, but their interaction has yet to be investigated.
View Article and Find Full Text PDFNanoscale
September 2025
Fujian Key Laboratory of Drug Target Discovery and Structural and Functional Research, Higher Educational Key Laboratory for Nano Biomedical Technology of Fujian Province, The School of Pharmacy, Fujian Medical University, Fuzhou, Fujian 350122, People's Republic of China.
The rational design of non-precious metal catalysts as a replacement for Pd is of great importance for catalyzing various important chemical reactions. To realize this purpose, the palladium-like superatom NbN was doped into a defective graphene quantum dot (GQD) model with a double-vacancy site to design a novel single superatom catalyst, namely, NbN@GQD, based on density functional theory (DFT), and its catalytic activity for the Suzuki reaction was theoretically investigated. Our results reveal that this designed catalyst exhibits satisfactory activity with a small rate-limiting energy barrier of 25.
View Article and Find Full Text PDFACS Appl Mater Interfaces
September 2025
National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan.
In this study, we analyze InO thin-film transistors (InO-TFT) using synchrotron-based hard X-ray photoelectron spectroscopy (HAXPES) in conditions. A bottom-gate InO-TFT with a high- AlO gate dielectric, grown on thermally oxidized silicon (SiO/p-Si), was examined while operating at varying and . The results reveal that the In 3d core level binding energy varies along the horizontal channel length, driven by the potential gradient induced by .
View Article and Find Full Text PDFJ Phys Condens Matter
September 2025
Department of Physics, Tuskegee University, 1200 West Montgomery Road, 106 Chappie James, Tuskegee, Alabama, 36088-1920, UNITED STATES.
Spin qubit defects in two-dimensional materials have a number of advantages over those in three-dimensional hosts including simpler technologies for the defect creation and control, as well as qubit accessibility. In this work, we select the VBCB defect in the hexagonal boron nitride (hBN) as a possible optically controllable spin qubit and explain its triplet ground state and neutrality. In this defect a boron vacancy is combined with a carbon dopant substituting the closest boron atom to the vacancy.
View Article and Find Full Text PDFNano Lett
September 2025
School of Materials and Chemistry, University of Shanghai for Science & Technology, Shanghai 200093, China.
Developing low-temperature gas sensors for parts per billion-level acetone detection in breath analysis remains challenging for non-invasive diabetes monitoring. We implement dual-defect engineering via one-pot synthesis of Al-doped WO nanorod arrays, establishing a W-O-Al catalytic mechanism. Al doping induces lattice strain to boost oxygen vacancy density by 31.
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