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We demonstrated how the photoelectrochemical (PEC) performance was enhanced by conformal deposition of an amorphous molybdenum sulfide (a-MoS) thin film on a nanostructured surface of black Si using atomic layer deposition (ALD). The a-MoS is found to predominantly consist of an octahedral structure (S-deficient metallic phase) that exhibits high electrocatalytic activity for the hydrogen evolution reaction with a Tafel slope of 41 mV/dec in an acid electrolyte. The a-MoS has a smaller work function (4.0 eV) than that of crystalline 2H-MoS (4.5 eV), which induces larger energy band bending at the p-Si surface, thereby facilitating interface charge transfer. These features enabled us to achieve an outstanding kinetic overpotential of ∼0.2 V at 10 mA/cm and an onset potential of 0.27 V at 1 mA/cm. Furthermore, the a-MoS layer provides superior protection against corrosion of the Si surface, enabling long-term PEC operation of more than 50 h while maintaining 87% or more performance. This work highlights the remarkable advantages of the ALD a-MoS layer and leads to a breakthrough in the architectural design of PEC cells to ensure both high performance and stability.
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http://dx.doi.org/10.1021/acsami.1c22273 | DOI Listing |
Adv Mater
September 2025
State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai, 200433, China.
Superconductivity and magnetism are two of the most extensively studied ordered systems in condensed matter physics. Recent advancements in the fabrication of van der Waals (vdW) layered materials have significantly advanced the exploration of both fundamental physics and practical applications within their heterostructures. The focus not only lies on the coexisting mechanism between superconductivity and magnetism, but also highlights the potential of these atomically thin layers to serve as crucial components in future superconducting circuits.
View Article and Find Full Text PDFAngew Chem Int Ed Engl
September 2025
College of Chemistry, Zhengzhou University, 100 Kexue Street, Zhengzhou, 450001, China.
Achieving quantitative control over interlayer spacing in multilayer two-dimensional (2D) supramolecular organic frameworks (SOFs) remains a fundamental challenge. Here, we report a molecular pillar engineering strategy enabling programmable vertical expansion of bilayer architectures. By designing elongated bipyridine pillars L2/L3 (3.
View Article and Find Full Text PDFACS Appl Mater Interfaces
September 2025
School of Materials Science and Engineering, Beihang University, Beijing 100191, P. R. China.
Nanostructured cubic boron nitride (NS-cBN) has attracted significant attention due to its high hardness and excellent thermal stability, yet a systematic strategy to balance strength and toughness through atomically structural design remains elusive. Here, we integrate plasticity theory with large-scale atomistic simulations to elucidate the size-dependent roles of internal defects, i.e.
View Article and Find Full Text PDFACS Nano
September 2025
Department of Chemical Engineering, Stanford University, Stanford, California 94305, United States.
Integration of ultrathin, high-quality gate insulators is critical to the success of two-dimensional (2D) semiconductor transistors in next-generation nanoelectronics. Here, we investigate the impact of atomic layer deposition (ALD) precursor choice on the nucleation and growth of insulators on monolayer MoS. Surveying a series of aluminum (AlO) precursors, we observe that increasing the length of the ligands reduces the nucleation delay of alumina on monolayer MoS, a phenomenon that we attribute to improved van der Waals dispersion interactions with the 2D material.
View Article and Find Full Text PDFACS Appl Mater Interfaces
September 2025
State Key Laboratory of Fluid Power and Mechatronic Systems, Zhejiang University, Hangzhou, Zhejiang 310058, China.
We report an electro-enhanced catalytic etching approach for direct atomic-level patterning of single-crystal 4H-SiC (0001) surfaces. The process utilizes platinum-coated probes under a negative sample bias, which enhances catalytic reactions and promotes etching of SiC without additional mechanical load. Unlike traditional etching approaches that rely on hazardous chemicals such as hydrofluoric acid, this approach operates under ambient conditions, offering improved safety and environmental compatibility.
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