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The interest in memristors has risen due to their possible application both as memory units and as computational devices in combination with CMOS. This is in part due to their nonlinear dynamics, and a strong dependence on the circuit topology. We provide evidence that also purely memristive circuits can be employed for computational purposes. In the present paper we show that a polynomial Lyapunov function in the memory parameters exists for the case of DC controlled memristors. Such a Lyapunov function can be asymptotically approximated with binary variables, and mapped to quadratic combinatorial optimization problems. This also shows a direct parallel between memristive circuits and the Hopfield-Little model. In the case of Erdos-Renyi random circuits, we show numerically that the distribution of the matrix elements of the projectors can be roughly approximated with a Gaussian distribution, and that it scales with the inverse square root of the number of elements. This provides an approximated but direct connection with the physics of disordered system and, in particular, of mean field spin glasses. Using this and the fact that the interaction is controlled by a projector operator on the loop space of the circuit. We estimate the number of stationary points of the approximate Lyapunov function and provide a scaling formula as an upper bound in terms of the circuit topology only.
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http://dx.doi.org/10.3390/e21080789 | DOI Listing |
Chaos
September 2025
Institute of Physics, University of São Paulo, 05508-900 São Paulo, SP, Brazil.
The memristor, theorized by Leon Chua in 1971, functions as a fundamental electronic component, directly linking electric charge and magnetic flux. As a result of their nonlinear characteristics, memristive circuits generally exhibit chaotic attractors in addition to periodicity. In this work, we consider the Muthuswamy-Chua system, a chaotic circuit consisting of an inductor, a capacitor, and a memristor.
View Article and Find Full Text PDFMicromachines (Basel)
July 2025
Holcombe Department of Electrical and Computer Engineering, Clemson University, Clemson, SC 29634, USA.
Synthetic nanopores were recently demonstrated with memristive and nonlinear voltage-current behaviors, akin to ion channels in a cell membrane. Such ionic devices are considered a promising candidate for the development of brain-inspired neuromorphic computing techniques. In this work, we show the composite behavior of nanopore-array large memristors, formed with different membrane materials, pore sizes, electrolytes, and device arrangements.
View Article and Find Full Text PDFNanoscale
August 2025
College of Physics and Energy, Fujian Normal University, Fujian Provincial Key Laboratory of Quantum Manipulation and New Energy Materials, Fuzhou, 350117, China.
The synergy between the memristive effect and negative differential resistance (NDR) offers promising prospects for advancing electronic devices and circuits. Predictable outcomes include the development of devices with improved performance and functionality that are applicable across a wide range of fields, from computing architecture to neuromorphic engineering. Despite the growing body of literature exploring this convergence, the effective implementation of the NDR effect in memristors faces many challenges.
View Article and Find Full Text PDFMicromachines (Basel)
July 2025
Systems Integration & Emerging Energies (SI2E), Electrical Engineering Department, National Engineering School of Sfax, University of Sfax, Sfax 3038, Tunisia.
This study presents transistor-level simulation results for a novel memristor emulator circuit. The design incorporates an inverter and a current-mode-controlled operational transconductance amplifier to stabilize the output voltage. Transient performance is evaluated across a 20 MHz to 100 MHz frequency range.
View Article and Find Full Text PDFACS Energy Lett
August 2025
AMOLF, Science Park 104, 1098 XG Amsterdam, The Netherlands.
Halide perovskite devices exhibit diverse current-voltage hysteresis behaviors, driven by distinct mechanisms that can enhance or hinder performance, making their understanding crucial. Among these, abrupt switching is particularly relevant for memristive operation and reverse-bias breakdown in solar cells. In this work, we identify four distinct hysteresis responses: capacitive, inductive, hysteresis-free, and abrupt switching.
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