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The tracking of eye gesture movements using wearable technologies can undoubtedly improve quality of life for people with mobility and physical impairments by using spintronic sensors based on the tunnel magnetoresistance (TMR) effect in a human-machine interface. Our design involves integrating three TMR sensors on an eyeglass frame for detecting relative movement between the sensor and tiny magnets embedded in an in-house fabricated contact lens. Using TMR sensors with the sensitivity of 11 mV/V/Oe and ten <1 mm embedded magnets within a lens, an eye gesture system was implemented with a sampling frequency of up to 28 Hz. Three discrete eye movements were successfully classified when a participant looked up, right or left using a threshold-based classifier. Moreover, our proof-of-concept real-time interaction system was tested on 13 participants, who played a simplified Tetris game using their eye movements. Our results show that all participants were successful in completing the game with an average accuracy of 90.8%.
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http://dx.doi.org/10.1109/TBCAS.2020.3027242 | DOI Listing |
Adv Mater
August 2025
Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117583, Singapore.
Magnetic tunnel junctions (MTJs) play a crucial role in spintronic applications, particularly data storage and sensors. Especially as a non-volatile memory, MTJs has received substantial attention due to its CMOS compatibility, low power consumption, fast switching speed, and high endurance. In parallel, bio-resorbable electronics have emerged as a promising solution for systems requiring temporary operation and secure data disposal, especially in military, intelligence, and biomedical systems where devices must safely disintegrate under physiological conditions.
View Article and Find Full Text PDFNanomaterials (Basel)
August 2025
School of Materials and Energy, Southwest University, Chongqing 400715, China.
Magnetic tunnel junctions (MTJs) are pivotal for spintronic applications such as magneto resistive memory and sensors. Two-dimensional van der Waals heterostructures offer a promising platform for miniaturizing MTJs while enabling the twist-angle engineering of their properties. Here, we investigate the impact of twisting the insulating barrier layer on the performance of a van der Waals MTJ with the structure graphene/1T-VSe/h-BN/1T-VSe/graphene, where 1T-VSe serves as the ferromagnetic electrodes and the monolayer h-BN acts as the tunnel barrier.
View Article and Find Full Text PDFACS Appl Mater Interfaces
August 2025
Department of Chemistry, University of Chicago, Chicago, Illinois 60637, United States.
Low-energy molecular lumiphores have seen increased interest due to potential imaging and communications applications. Specifically, molecules that emit in the near-infrared (NIR, 700-1700 nm) or telecom (∼1260-1625 nm) regions, where attenuation is minimized in biological tissue and optical fibers, respectively, can drastically improve image resolution and depth penetration; however, bright low-energy emission is rare due to exponentially decreasing quantum yields in this region. Chiral molecules exhibiting strong NIR or telecom absorption/emission would be of particular interest due to advanced security and spintronics applications, but these compounds remain scarce and are currently restricted to lanthanide or nanoparticle-based systems.
View Article and Find Full Text PDFACS Appl Mater Interfaces
September 2025
Institute of Chemistry, Chemnitz University of Technology, Chemnitz 09107, Germany.
Voltage control of exchange bias (EB) is an important technological goal for low-power spintronic sensor and memory devices. The magneto-ionic (MI) approach for voltage-controlled EB is a promising strategy to achieve this goal, utilizing electrochemical reactions at low operational voltages. In typical MI devices, however, the sensitive EB layers are directly targeted by the electrochemical reactions, which often impairs reversibility.
View Article and Find Full Text PDFACS Appl Mater Interfaces
August 2025
Guangdong Provincial Key Laboratory of Semiconductor, Optoelectronic Materials and Intelligent Photonic Systems, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, China.
The physics at antiferromagnetic (AFM)/ferromagnetic (FM) interfaces, including exchange bias (EB) and spin current, are of key interest in spintronics. However, the relationship between the EB effect and spin current is still controversial. Here, we have observed anisotropic and controllable nonlocal damping in a typical EB system, i.
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