Category Ranking
98%
Total Visits
921
Avg Visit Duration
2 minutes
Citations
20
Article Abstract
We report on the design, fabrication and characterisation of large-area photoconductive THz array structures, consisting of a thin LT-GaAs active region transferred to an insulating substrate using a wafer-scale bonding process. The electrically insulating, transparent substrate reduces the parasitic currents in the devices, allowing peak THz-fields as high as 120 kV cm to be generated over a bandwidth >5 THz. These results are achieved using lower pulse energies than demanded by conventional photoconductive arrays and other popular methods of generating high-field THz radiation. Two device sizes are fully characterised and the emission properties are compared to generation by optical rectification in ZnTe. The device can be operated in an optically saturated regime in order to suppress laser noise.
Download full-text PDF |
Source |
|---|---|
| http://dx.doi.org/10.1364/OE.391656 | DOI Listing |
Publication Analysis
Top Keywords
Similar Publications
Synthesis of Perovskite Nanowires and Their Application for Photodetectors.
Adv Sci (Weinh)
August 2025
State Key laboratory of integrated Optoelectronics, College of Electronic Science and Engineering, International Center of Future Science, Jilin University, Changchun, 130012, P. R. China.
1D nanowires (broadly including microwires and quantum wires) of metal halide perovskites exhibit several unique properties due to their distinctive morphology, such as enhanced responsivity under weak light, mechanical flexibility, and optical anisotropy. These perovskite nanowires can be readily fabricated into lateral devices as photoconductive photodetectors. Herein, the synthesis of perovskite nanowires and their applications for photodetectors are primarily focused on, providing an overview of the major synthesis strategies for perovskite nanowires (and arrays) since their initial reports, and analyzing how structural design and modification strategies can improve the performance of nanowire-based devices.
View Article and Find Full Text PDFGate-Tunable Highly Linear Bipolar Photoresponse in Se@SWCNT Adaptive Neurons for Dynamically Programmable Neuromorphic Computing.
Adv Mater
August 2025
School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei, 230026, China.
The development of tunable and highly controllable photoconductive devices for brain-inspired optical neuromorphic systems remains challenging. Previous neuromorphic devices are limited by asymmetric and nonlinear conductive properties, which impose specific restrictions on training tasks and weight learning rules in dynamic and complex visual environments. A programmable synaptic transistor based on a Se@SWCNT 1D van der Waals heterojunction, enabling gate-controlled positive and negative responses is presented.
View Article and Find Full Text PDFEnhanced Optoelectronic Synaptic Performance in Sol-Gel Derived Al-Doped ZnO Thin Film Devices.
Materials (Basel)
June 2025
Department of IT & Semiconductor Convergence Engineering, Tech University of Korea, Siheung 15073, Republic of Korea.
We report the fabrication and characterization of Al-doped ZnO (AZO) optoelectronic synaptic devices based on sol-gel-derived thin films with varying Al concentrations (0~4.0 wt%). Structural and optical analyses reveal that moderate Al doping modulates the crystal orientation, optical bandgap, and defect levels of ZnO films.
View Article and Find Full Text PDFWe report a transparent indium gallium zinc oxide (IGZO)-based optoelectronic synapse that exhibits strong persistent photoconductivity and tunable synaptic plasticity. The device, built on a quartz substrate with indium tin oxide electrodes, maintains over 70% transparency in the visible range, enabling stealthy operation. By modulating light duration, intensity, and frequency, we achieve key neuromorphic behaviors.
View Article and Find Full Text PDFPhotodetection Mechanisms and Ultraviolet-Visible Imaging Characteristics of High-Detectivity Broadband Metal-Semiconductor-Metal Photodetector Arrays on Wafer-Scale Monolayer MoS.
ACS Appl Mater Interfaces
June 2025
School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Jeonbuk National University, Jeonju 54896, Republic of Korea.
The discovery of an intrinsic direct bandgap in single-layer MoS has revealed significant potential for advancements in optoelectronic and photonic applications. This study aims to explore this potential by developing a high-performance Ni/Au metal-semiconductor-metal photodetector on wafer-scale epitaxially grown MoS. The quality of the monolayer MoS film was verified using various techniques, including Raman, photoluminescence (PL), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), and transmission electron microscopy (TEM).
View Article and Find Full Text PDF