Light enhanced low-voltage nonvolatile memory based on all-inorganic perovskite quantum dots.

Light enhanced low-voltage nonvolatile memory was prepared using all-inorganic perovskite quantum dots (QDs) as a semiconductor layer and Ag nanoparticles (NPs) as a floating gate layer. The photo-induced carriers can be produced in CsPbBr QDs under ultraviolet light and trapped in Ag NPs under the action of an external electric field. With the assistance of light, the device exhibited a significantly larger memory window (ΔV ) under low programming and erasing voltages of ±5 V owing to the use of CsPbBr QDs. Furthermore, we proved that the ΔV of the memory strongly depended on the applied bias voltage (V ) as well as still remaining at 79.3% after 10 s at V of 1.4 V. The facile memory provides a new approach to trap a photo-induced charge and reduce operating voltages by combining QDs with metal NPs.