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Coercive fields of piezoelectric materials can be strongly influenced by environmental temperature. We investigate this influence using a heterostructure consisting of a single crystal piezoelectric film and a quantum dots containing membrane. Applying electric field leads to a physical deformation of the piezoelectric film, thereby inducing strain in the quantum dots and thus modifying their optical properties. The wavelength of the quantum dot emission shows butterfly-like loops, from which the coercive fields are directly derived. The results suggest that coercive fields at cryogenic temperatures are strongly increased, yielding values several tens of times larger than those at room temperature. We adapt a theoretical model to fit the measured data with very high agreement. Our work provides an efficient framework for predicting the properties of ferroelectric materials and advocating their practical applications, especially at low temperatures.
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http://dx.doi.org/10.1021/acs.nanolett.7b04138 | DOI Listing |
This article considers the calls for police reform and the continuation of police brutality to be twinning modes of policing within Kenya's broader counterterrorism and preventing and countering violent extremism (P/CVE) architecture. Rather than seeing ongoing police brutality as a failure of, or at odds with, calls for police reform, we argue that what appears to be a paradox is actually indicative of a dialectic central to civil counterinsurgency - a dialectic comprising what we call 'coercive compliance' and 'abject coercion'. Based on extensive field research in Kenya, this article centers the institution of the police as an integral mode of P/CVE-as-counterinsurgency to analyze various manifestations of police power, including international compliance vis-a-vis police reform, police brutality, and community engagement.
View Article and Find Full Text PDFPerspect Behav Sci
September 2025
Department of Psychological Studies in Education, Temple University, 1301 Cecil B. Moore Avenue, Philadelphia, PA 19122 USA.
This commentary critically appraises attacks on applied behavior analysis (ABA) from outside and-increasingly-within the field. Commonly repeated attacks are that ABA is coercive and suppresses individual identity, aligns with the medical model, causes trauma, and, in more extreme cases, constitutes abuse. We illustrate how these claims are based on unfounded criticism and longstanding myths about ABA and stand in direct contrast to the empirical foundations of behavior analysis.
View Article and Find Full Text PDFNat Commun
September 2025
National Key Laboratory of Advanced Micro and Nano Manufacture Technology, Shanghai Jiao Tong University, Shanghai, China.
The polarization switching pathway in HfZrO-based ferroelectric thin film is still not well clarified and agreed, limiting the fundamental physical understanding and performance engineering. The key question lies in clarifying the transient intermediate state during the polarization switching of orthorhombic phase. In this work, by designing the ferroelectric and dielectric stacks, we theoretically and experimentally demonstrate a polarization switching pathway through an orthorhombic-tetragonal-orthorhombic phase transition in ferroelectric HfZrO where the non-polar tetragonal phase is metastable.
View Article and Find Full Text PDFNano Lett
September 2025
Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States of America.
Wurtzite nitride ferroelectric materials have emerged as promising candidates for next-generation memory applications, due to their exceptional polarization properties and compatibility with conventional semiconductor processing techniques. Here, we demonstrate the first successful areal scaling of aluminum scandium nitride (AlScN) ferroelectric diode (FeDiode) memory down to device diameter of 40 nm while maintaining an ON/OFF ratio of >60. Using a 20-nm-thick AlScN ferroelectric layer, we evaluate both metal-insulator-ferroelectric-metal (MIFM) and metal-ferroelectric-metal (MFM) architectures for scaled resistive memory devices.
View Article and Find Full Text PDFMater Horiz
September 2025
College of Materials Science and Engineering, Sichuan University, Chengdu, China.
Bismuth-layered structure ferroelectrics (BLSFs), exemplified by CaBiTaO (CBTa), exhibit exceptional thermal stability at high temperatures with a high Curie temperature. This attribute renders them highly promising candidates for piezoelectric sensors, transducers, non-volatile ferroelectric memory, working in extreme environments. However, CBTa ceramic suffers from the following intrinsic limitations: spontaneous polarization confined within the -plane of the unit cell and a large coercive field, leading to severely suppressed piezoelectric activity ( ≈ 5.
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