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The transition metal oxides ZrO(2) and HfO(2) as well as their solid solution are widely researched and, like most binary oxides, are expected to exhibit centrosymmetric crystal structure and therewith linear dielectric characteristics. For this reason, those oxides, even though successfully introduced into microelectronics, were never considered to be more than simple dielectrics possessing limited functionality. Here we report the discovery of a field-driven ferroelectric phase transition in pure, sub 10 nm ZrO(2) thin films and a composition- and temperature-dependent transition to a stable ferroelectric phase in the HfO(2)-ZrO(2) mixed oxide. These unusual findings are attributed to a size-driven tetragonal to orthorhombic phase transition that in thin films, similar to the anticipated tetragonal to monoclinic transition, is lowered to room temperature. A structural investigation revealed the orthorhombic phase to be of space group Pbc2(1), whose noncentrosymmetric nature is deemed responsible for the spontaneous polarization in this novel, nanoscale ferroelectrics.
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http://dx.doi.org/10.1021/nl302049k | DOI Listing |
ACS Appl Mater Interfaces
September 2025
Department of Materials Science and Chemical Engineering, Hanyang University, Ansan 15588, Republic of Korea.
With tris(dimethylamino)cyclopentadienyl metal (CpX(NMe)) precursors, the optimum process temperature of atomic layer deposition (ALD) is higher for HfO films (∼350 °C) than ZrO films (∼320 °C). Since simultaneous ALD of the two films is required in HfZrO film processes, the optimum ALD temperatures of the two films need to be adjusted equally. The cyclopentadienyl Zr precursor (MCPZr) introduced in this study exhibits better thermal stability than that of CpZr(NMe).
View Article and Find Full Text PDFThis study investigates ultraviolet laser-induced fatigue and absorptance dynamics in single-layer AlO, HfO, and ZrO dielectric coatings on fused silica substrates using 355 nm, 10 ps pulses at a repetition rate of 1 MHz. Laser-induced damage threshold testing, combined with photothermal common-path interferometry, reveals that the formation of the "color change" damage is a multistage, cumulative process, dependent on material treatment and laser intensity. These findings offer insights into optical fatigue mechanisms and provide a pathway for non-catastrophic lifetime assessment of optical coatings based on the accumulation threshold of the absorbed dose.
View Article and Find Full Text PDFSmall
August 2025
Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, Bellaterra, Barcelona, 08193, Spain.
Fluorite ferroelectrics based on HfO and ZrO hold great potential for efficient memory devices. For these applications, it is of interest to control and maximize the remanent polarization. The literature shows a strong dispersion of polarization values for the same chemical composition.
View Article and Find Full Text PDFNano Lett
July 2025
Department of Physics Education, Seoul National University, Seoul 08826, Republic of Korea.
The stabilization of intermediate polar phases in fluorite-structured oxides is critical for advancing ferroelectric and antiferroelectric applications. Here, we report the stabilization of epitaxial polar tetragonal (T) ZrO. Epitaxial HfZrO thin films (x = 1, 0.
View Article and Find Full Text PDFACS Appl Mater Interfaces
July 2025
Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China.
Nucleation behavior governs the selectivity of area-selective atomic layer deposition (AS-ALD). Ideally, nontargeted regions should exhibit delayed nucleation or sparse nucleation that can be easily removed by post-treatment. Here, we report a burst nucleation phenomenon during AS-ALD on perfluoroalkyl self-assembled monolayer (SAM)-treated surfaces.
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