Publications by authors named "Zhipeng Dou"

Poly (I:C), a viral mimic, is capable of activating the antiviral immune mechanisms in teleosts. In this study, we investigated the transcriptional responses of Ussuri Catfish () to poly (I:C) stimulation at 3 and 48 h, focusing on the similarities and differences in antiviral mechanisms exhibited in the liver and spleen. At 3 h, the signaling pathways that were concurrently enriched in both the spleen and liver include JAK-STAT, TNF, NF-κB, RIG-I-like receptor, and NOD-like receptor.

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This study investigated the effects of dietary iron supplementation on water quality, plant growth, and fish health in an aquaponic system over 90 days. Iron supplementation significantly improved plant growth, with increased plant height, stem diameter, leaf count, and fruit yield in tomatoes () and pak choi () ( < 0.05).

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Constructing crossmodal in-sensor processing system based on high-performance flexible devices is of great significance for the development of wearable human-machine interfaces. A bio-inspired crossmodal in-sensor computing system can perform real-time energy-efficient processing of multimodal signals, alleviating data conversion and transmission between different modules in conventional chips. Here, we report a bio-inspired crossmodal spiking sensory neuron (CSSN) based on a flexible VO memristor, and demonstrate a crossmodal in-sensor encoding and computing system for wearable human-machine interfaces.

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Multifrequency atomic force microscopy (AFM) utilizes the multimode operation of cantilevers to achieve rapid high-resolution imaging and extract multiple properties. However, the higher-order modal response of traditional rectangular cantilever is weaker in air, which affects the sensitivity of multifrequency AFM detection. To address this issue, we previously proposed a bridge/cantilever coupled system model to enhance the higher-order modal response of the cantilever.

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The Asian longhorn beetle (ALB) Anoplophora glabripennis is one of the most successful and most feared invasive insect species worldwide. This review covers recent research concerning the distribution of and damage caused by ALB, as well as major efforts to control and manage ALB in China. The distribution and destruction range of ALB have continued to expand over the past decade worldwide, and the number of interceptions has remained high.

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The species of Tubakia (Tubakiaceae, Diaporthales, Sordariomycetes) have often been reported as endophytes and pathogens on woody plants. During the investigation of Tubakia species from Fagaceae trees in China, 46 isolates were obtained from diseased leaves and seeds. The characterization of these isolates was based on the observation of morphological characters, the effect of temperature on mycelial growth rate, as well as the combined genes of ITS, tef1 and tub2.

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(Asian longhorned beetle) is a wood-boring pest that can inhabit a wide range of healthy deciduous host trees in native and invaded areas. The gut microbiota plays important roles in the acquisition of nutrients for the growth and development of larvae. Herein, we investigated the larval gut structure and studied the lignocellulose activity and microbial communities of the larval gut following feeding on different host trees.

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The performance of nitride devices is strongly affected by their polarity. Understanding the polarity determination and evolution mechanism of polar wurtzite nitrides on nonpolar substrates is therefore critically important. This work confirms that the polarity of AlN on sapphire prepared by metal-organic chemical vapor deposition is not inherited from the nitrides/sapphire interface as widely accepted, instead, experiences a spontaneous polarity inversion during the growth.

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The wide application of multi-frequency atomic force microscopy (AFM) places higher demands on the higher-order modes response of the cantilever. The response of the higher modes however is generally weaker than that of the fundamental mode in air. Researchers have proposed many methods, most of which involve cantilever modification, to enhance higher-order eigenmodes response.

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Atomic force microscopy (AFM) has been an important tool for nanoscale imaging and characterization with atomic and subatomic resolution. Theoretical investigations are getting highly important for the interpretation of AFM images. Researchers have used molecular simulation to examine the AFM imaging mechanism.

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Efficient and low-cost production of high-quality aluminum nitride (AlN) films during heteroepitaxy is the key for the development of deep ultraviolet light-emitting diodes (DUV-LEDs). Here, the quasi-2D growth of high-quality AlN film with low strain and low dislocation density on graphene (Gr) is presented and a high-performance 272 nm DUV-LED is demonstrated. Guided by first-principles calculations, it is found that AlN grown on Gr prefers lateral growth both energetically and kinetically, thereby resulting in a Gr-driven quasi-2D growth mode.

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Bimodal atomic force microscopy (AFM) is an important branch of multi-frequency AFM, which can simultaneously obtain the surface morphology and properties of samples. However, the atomic-scale phenomena in the vibration process of bimodal AFM have not been observed due to the absence of atomic-scale model. In this paper, the molecular dynamics (MD) simulations are used to model bimodal AFM.

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For atomically thin two-dimensional materials, interfacial effects may dominate the entire response of devices, because most of the atoms are in the interface/surface. Graphene/sapphire has great application in electronic devices and semiconductor thin-film growth, but the nature of this interface is largely unknown. Here we find that the sapphire surface has a strong interaction with some of the carbon atoms in graphene to form a C-O-Al configuration, indicating that the interface interaction is no longer a simple van der Waals interaction.

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For III-nitride-based devices, such as high-brightness light-emitting diodes (LEDs), the poor heat dissipation of the sapphire substrate is deleterious to the energy efficiency and restricts many of their applications. Herein, the role of vertically oriented graphene (VG) nanowalls as a buffer layer for improving the heat dissipation in AlN films on sapphire substrates is studied. It is found that VG nanowalls can effectively enhance the heat dissipation between an AlN film and a sapphire substrate in the longitudinal direction because of their unique vertical structure and good thermal conductivity.

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The growth of single-crystal III-nitride films with a low stress and dislocation density is crucial for the semiconductor industry. In particular, AlN-derived deep-ultraviolet light-emitting diodes (DUV-LEDs) have important applications in microelectronic technologies and environmental sciences but are still limited by large lattice and thermal mismatches between the epilayer and substrate. Here, the quasi-van der Waals epitaxial (QvdWE) growth of high-quality AlN films on graphene/sapphire substrates is reported and their application in high-performance DUV-LEDs is demonstrated.

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For alkali-metal ion batteries, revealing the phase transformation and the ion migration dynamics in the electrodes is vital for understanding how the electrodes work and thereby how we can improve them. Here, using in situ transmission electron microscopy, we track the structural evolution and migration dynamics during sodium insertion into TiS2 nanostructures with the lattice fringe resolution. We find that the sodiation process of TiS2 is initiated by an intercalation reaction and followed by a conversion reaction.

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Higher harmonics have been widely used to characterize nanomechanical properties of the sample surface in tapping mode atomic force microscopy. They are usually analyzed by the Fourier transform method which provides time-averaged amplitude and phase information. In this paper, we apply the analytic wavelet transform to analyze higher harmonics.

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The air-stable and high-mobility two-dimensional (2D) BiOSe semiconductor has emerged as a promising alternative that is complementary to graphene, MoS, and black phosphorus for next-generation digital applications. However, the room-temperature residual charge carrier concentration of 2D BiOSe nanoplates synthesized so far is as high as about 10-10 cm, which results in a poor electrostatic gate control and unsuitable threshold voltage, detrimental to the fabrication of high-performance low-power devices. Here, we first present a facile approach for synthesizing 2D BiOSe single crystals with ultralow carrier concentration of ∼10 cm and high Hall mobility up to 410 cm V s simultaneously at room temperature.

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The development of highly efficient and durable electrocatalysts for high-performance overall water-splitting devices is crucial for clean energy conversion. However, the existing electrocatalysts still suffer from low catalytic efficiency, and need a large overpotential to drive the overall water-splitting reactions. Herein, we report an iridium-tungsten alloy with nanodendritic structure (IrW ND) as a new class of high-performance and pH-universal bifunctional electrocatalysts for hydrogen and oxygen evolution catalysis.

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We study the roles of graphene acting as a buffer layer for growth of an AlN film on a sapphire substrate. Graphene can reduce the density of AlN nuclei but increase the growth rate for an individual nucleus at the initial growth stage. This can lead to the reduction of threading dislocations evolved at the coalescence boundaries.

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Ionic doping and migration in solids underpins a wide range of applications including lithium ion batteries, fuel cells, resistive memories, and catalysis. Here, by in situ transmission electron microscopy technique we directly track the structural evolution during Li ions insertion and extraction in transition metal dichalcogenide 1T-VSe nanostructures which feature spontaneous localized superstructures due to the periodical interstitial V atoms within the van der Waals interlayers. We find that lithium ion migration destroys the cationic orderings and leads to a phase transition from superstructure to nonsuperstructure.

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The tip motion of the dynamic atomic force microscope in liquids shows complex transient behaviors when using a low stiffness cantilever. The second flexural mode of the cantilever is momentarily excited. Multiple impacts between the tip and the sample might occur in one oscillation cycle.

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Single-crystalline GaN-based light-emitting diodes (LEDs) with high efficiency and long lifetime are the most promising solid-state lighting source compared with conventional incandescent and fluorescent lamps. However, the lattice and thermal mismatch between GaN and sapphire substrate always induces high stress and high density of dislocations and thus degrades the performance of LEDs. Here, the growth of high-quality GaN with low stress and a low density of dislocations on graphene (Gr) buffered sapphire substrate is reported for high-brightness blue LEDs.

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Plasma-enhanced chemical vapor deposition (PECVD) is an applicable route to achieve low-temperature growth of graphene, typically shaped like vertical nanowalls. However, for transparent electronic applications, the rich exposed edges and high specific surface area of vertical graphene (VG) nanowalls can enhance the carrier scattering and light absorption, resulting in high sheet resistance and low transmittance. Thus, the synthesis of laid-down graphene (LG) is imperative.

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A new species of Venturia (V. chinensis) is described and illustrated from the leaves of Lonicera praeflorens collected from Lesser Khingan Mountains, the northeast China. It is characterized by habitat saprobic; ascomata small-sized, solitary or scattered, superficial, subglobose to citriform, wall black, papillate, ostiolate, covered with setae; peridium thin; hamathecium evanescent in mature ascomata; asci 8-spored, bitunicate, fissitunicate, oblong to obclavate, with or without a short, knob-like pedicel; ascospores ellipsoidal, olivaceous pale brown, 1-septate, ascospore wall thin, smooth.

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