Selective UV Sensing for Energy-Efficient UV-A Artificial Synapses Using a ZnO/ZnGaO Heterojunction Diode.

As neuromorphic computing systems, which allow for parallel data storage and processing with high area and energy efficiency, show great potential for future storage and in-memory computing technologies. In this article, a high-performance UV detector for artificial optical synapse applications is demonstrated that can selectively detect UV-A and UV-C, with a responsivity of 407 A W. The pyrophototronic effect increases photocurrent dramatically under UV-A irradiation due to heat accumulation in the ZnO layer and ZnGaO's low thermal conductivity.

Tunable photo-response in the visible to NIR spectrum range of Germanium-based junctionless nanowire transistor.

In this paper, the phototransistor behavior is investigated in the germanium-on-insulator (GeOI)-based junctionless nanowire (JL-NW) transistor under various light conditions. High responsivity and photosensitivity are attributed in the fully depleted regime within the visible and near-infrared bands. The impact of light is also investigated in detail on the electronic and transfer characteristics such as energy bandgap, carrier distribution, electrostatic potential, electric field, generation and recombination rates.

Piezoresistive sensitivity enhancement below threshold voltage in sub-5 nm node using junctionless multi-nanosheet FETs.

In this paper, the piezoresistive sensitivity is enhanced by applying uniform mechanical stress (MS) on the multi-nanosheet (NS) channels of sub-5 nm junctionless field-effect transistors. The piezoresistivity of the sensing device is boosted by narrowing channel conductivity using low gate biasing and reducing physical channel width, resulting in the maximum (∼6 times higher) sensitivity observed in the subthreshold regime compared to the ON-state condition. In addition, the sensitivity is extensively increased by ∼30.

Reaching High Piezoelectric Performance with Rotating Directional-Field-Aligned PVDF-MoS Piezo-Polymer Applicable for Large-Area Flexible Electronics.

Wearable electronics and smart harvesting textile studies require a material system that resists physical stimulation. Such applications require receptive piezo-polymers, and their activation-free preparation that can translate into a continuous large-area film. In this work, it is discussed whether the β-content of piezo-polymer is extended with no use of any activation (i.

Impact of ambient temperature and thermal resistance on device performance of junctionless silicon-nanotube FET.

In this article, a comprehensive analysis of the impact of electrothermal characteristics in the junctionless silicon-nanotube (Si-NT) field-effect-transistors is carried out using the Sentaurus TCAD. The combined study of the variation in thermal contact resistance (1 × 10to 1 × 10mW K), ambient temperature (300-400 K), and spacer length (5-20 nm) are performed. Significant improvements are observed in carrier temperature by 14%, lattice temperature by 13.

A highly sensitive wearable flexible strain sensor based on polycrystalline MoS thin film.

The present study investigates the piezoresistive properties of polycrystalline MoS film for strain-sensing applications. The gauge factor (GF) of the flexible MoS device (MoS/PET) has been calculated to be 102 ± 5 in the stress range from ~7 MPa to ~14 MPa. In addition, to improve the sensing stress range, the flexible strain sensors are encapsulated by SU-8.

All metal nanoelectromechanical switch working at 300 °C for rugged electronics applications.

An all metal based electrostatic nanoelectromechanical switch has been fabricated using a one mask process. High temperature cycling behavior is demonstrated in a vacuum chamber at 300 °C for more than 28 hours. The compelling results indicate that the design is promising for the realization of rugged electronics with three-dimensional integration.

An inductively powered implantable blood flow sensor microsystem for vascular grafts.

Monitoring blood flow rate inside prosthetic vascular grafts enables an early detection of the graft degradation, followed by the timely intervention and prevention of the graft failure. This paper presents an inductively powered implantable blood flow sensor microsystem with bidirectional telemetry. The microsystem integrates silicon nanowire (SiNW) sensors with tunable piezoresistivity, an ultralow-power application-specific integrated circuit (ASIC), and two miniature coils that are coupled with a larger coil in an external monitoring unit to form a passive wireless link.