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An all metal based electrostatic nanoelectromechanical switch has been fabricated using a one mask process. High temperature cycling behavior is demonstrated in a vacuum chamber at 300 °C for more than 28 hours. The compelling results indicate that the design is promising for the realization of rugged electronics with three-dimensional integration.
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http://dx.doi.org/10.1039/c3nr05255a | DOI Listing |
Nano Lett
August 2025
Center for Quantum Technology, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea.
Linear control in nanoscale electromechanical systems is often hindered by strong nonlinear interactions and environmental sensitivity. Here, we present a nanomechanical turnstile based on a suspended cantilever with an electron island, enabling mechanically modulated electron transport. The device exhibits resonance-tuned conductance, polarity-dependent switching, and a distinct beating response arising from the linear combination of mechanical and electrical modulations.
View Article and Find Full Text PDFSmall
July 2025
National Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210023, China.
Micro- and nanoelectromechanical (MEM/NEM) switches, capable of reliable operation in high-radiation environments, hold great potential for applications in nuclear and space industries. However, a MEM/NEM computational system typically requires both volatile switches for logic computing and non-volatile switches for memory. To date, a single MEM/NEM switch that can operate in both of these two function modes has not been demonstrated.
View Article and Find Full Text PDFMicrosyst Nanoeng
July 2025
KTH Royal Institute of Technology, 11428, Stockholm, Sweden.
Nanoelectromechanical (NEM) switches have the advantages of zero leakage current, abrupt switching characteristics, and harsh environmental capabilities. This makes them a promising component for digital computing circuits when high energy efficiency under extreme environmental conditions is important. However, to make NEM-based logic circuits commercially viable, NEM switches must be manufacturable in existing semiconductor foundry platforms to guarantee reliable switch fabrication and very large-scale integration densities, which remains a big challenge.
View Article and Find Full Text PDFACS Appl Mater Interfaces
April 2025
Department of Chemistry, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States.
Transition metal phosphides (TMPs) have aroused widespread research interest in the past decade due to their excellent electrical and mechanical properties. Nonetheless, their application in micro- and nanoelectromechanical systems (MEMS and NEMS) has not been investigated. Here, we use density functional theory (DFT) to explore the potential of four transition-metal phosphides to act as contact materials of MEMS/NEMS switches.
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March 2025
State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China.
PbZrO (PZO) thin films, as a classic antiferroelectric material, have attracted tremendous attention for their excellent dielectric, electromechanical, and thermal switching performances. However, several fundamental questions remain unresolved, particularly the existence of an intermediate phase during the transition from the antiferroelectric (AFE) to ferroelectric (FE) state. Here, a phase coexistence configuration of an orthorhombic AFE phase and a tetragonal-like (T-like) phase is reported in epitaxial antiferroelectric PZO thin films, with thickness ranging from 16 to 110 nm.
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