Study on Photoelectric Properties of Graphene/Molybdenum Disulfide Heterojunction.

The zero-bandgap of graphene means that it can achieve a full spectral range response for graphene-based photodetectors. But the zero bandgap of graphene also brings relatively large dark current. To improve this issue and achieve low-cost graphene-based photodetectors, radio frequency (RF) magnetron-sputtered molybdenum disulfide constructed with graphene to form heterojunction was investigated.

Dark Current Reduction and Performance Improvements in Graphene/Silicon Heterojunction Photodetectors Obtained Using a Non-Stoichiometric HfO Thin Oxide Layer.

Graphene/silicon heterojunction photodetectors suffer from a high dark current due to the high surface states and low barrier height at the interface, which limits their application. In this study, we introduce an HfO interfacial layer via magnetron sputtering to address this issue. With this new structure, the dark current is reduced by six times under a bias voltage of -2 V.

Tunable electronic and optical properties of MoTe/InSe heterostructure via external electric field and strain engineering.

Based on first-principles calculation under density functional theory, the geometry, electronic and optical properties of the MoTe/InSe heterojunction have been investigated. The results reveal that the MoTe/InSe heterojunction has a typical type-Ⅱ band alignment and exhibits an indirect bandgap of 0.99 eV.

Atomic Layer Deposition of Ultrathin LaO/AlO Nanolaminates on MoS with Ultraviolet Ozone Treatment.

Due to the chemically inert surface of MoS, uniform deposition of ultrathin high-κ dielectric using atomic layer deposition (ALD) is difficult. However, this is crucial for the fabrication of field-effect transistors (FETs). In this work, the atomic layer deposition growth of sub-5 nm LaO/AlO nanolaminates on MoS using different oxidants (HO and O) was investigated.

Electric field and uniaxial strain tunable electronic properties of the InSb/InSe heterostructure.

In this study, the InSb/InSe heterostructure is systematically examined in terms of its electronic properties through first-principles calculations. According to our findings, the InSb/InSe heterostructure is a kind of unique direct band gap semiconductor, which has inherent type-II band alignment, resulting in significant photogenerated electron-hole pair separation in space. When the external electric field is applied, the Stark effect is observed in the band gap.

Type-II tunable SiC/InSe heterostructures under an electric field and biaxial strain.

In this study, first-principles calculations based on the density functional theory (DFT) are exploited to investigate the electronic capabilities of SiC/InSe heterostructures. According to our results, the SiC/InSe heterostructure possesses an inherent type-II band alignment, which displays a noticeable Stark effect on the band gap under a stable electric field. Besides, the heterostructure exhibits a low carrier effective mass and a narrower band gap when it is subject to tensile strain.

Band alignment control in a blue phosphorus/CN van der Waals heterojunction using an electric field.

Well-controlled band engineering of a blue phosphorus/C2N van der Waals (vdW) heterojunction is investigated by density functional theory (DFT) calculations. The heterojunction has a natural type-II band alignment with a direct band gap value of 1.514 eV, which gives the enormous potential for solar cell applications.

Tunable electronic properties of an Sb/InSe van der Waals heterostructure by electric field effects.

The electronic properties of an Sb/InSe heterostructure are investigated by using the density functional theory method. A type-II staggered-gap band alignment is achieved from the Sb/InSe vdW heterostructure with the Sb layer dominates the lowest energy holes as well as the lowest energy electrons are contributed by the InSe layer, which facilitates the spatial effective separation of photogenerated electron-hole pairs. Additionally, an indirect-direct band gap transition can be triggered via varying the interlayer distance.

Erratum: Publisher's Note: "A particle manipulation method and its experimental study based on opposed jets" [Biomicrofluidics , 024110 (2018)].

[This corrects the article DOI: 10.1063/1.5020600.

A particle manipulation method and its experimental study based on opposed jets.

A particle manipulation method was presented in this paper based on opposed jets. In such a method, particles were trapped near the stagnation point of the flow field and moved by controlling the position of the stagnation point. The hold direction of the flow to the particle was changed by changing the orientation of the opposed-jet flow field where a particle is trapped.

Fabrication of Self-Powered Fast-Response Ultraviolet Photodetectors Based on Graphene/ZnO:Al Nanorod-Array-Film Structure with Stable Schottky Barrier.

A Schottky UV photodetector based on graphene/ZnO:Al nanorod-array-film (AZNF) structure has been fabricated. Different from the previously reported graphene/ZnO photodetectors, this photodetector has a stable Schottky barrier which does not disappear under UV light. Thus, the UV photodetector can work as a high-performance self-powered device.