Publications by authors named "Eugene A Eliseev"

Article Synopsis
  • Combinatorial spread libraries enable the study of material properties across various concentrations and conditions, but traditionally require extensive functional property measurements.
  • The authors introduce automated piezoresponse force microscopy (PFM) to efficiently analyze these libraries, specifically in the SmBiFeO system, which features a unique phase boundary between ferroelectric and antiferroelectric states.
  • By utilizing PFM and developing a mathematical framework based on Ginzburg-Landau theory, they aim to streamline materials discovery and make their data accessible for further research in the field.
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  • Ferroelectric materials have the potential to transform information technology due to their low power use, quick speeds, and excellent durability, but there are challenges with integrating them into existing semiconductor technologies.
  • Recent research has shown promising ferroelectric properties in new binary oxides like ZnMgO, which could lead to practical applications.
  • The study identifies two distinct ferroelectric subsystems in ZnMgO and introduces a new mechanism for polarization switching, challenging traditional views on how these materials behave, which could advance both fundamental physics and technological applications.
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Nanoscale ferroelectric 2D materials offer the opportunity to investigate curvature and strain effects on materials functionalities. Among these, CuInPS (CIPS) has attracted tremendous research interest in recent years due to combination of room temperature ferroelectricity, scalability to a few layers thickness, and ferrielectric properties due to coexistence of 2 polar sublattices. Here, we explore the local curvature and strain effect on polarization in CIPS via piezoresponse force microscopy and spectroscopy.

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  • Ferroelectricity in binary oxides like hafnia and zirconia has gained attention for its unique physical mechanisms and potential use in semiconductors.
  • Recent studies indicate that the properties of these materials are influenced by various factors, including electrochemical conditions and strain, leading to unusual behaviors.
  • Research utilizing advanced microscopy reveals that these materials exhibit a range of ferroic behaviors, suggesting an antiferroionic model that could help optimize hafnia-based devices.
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Using hypothesis-learning-driven automated scanning probe microscopy (SPM), we explore the bias-induced transformations that underpin the functionality of broad classes of devices and materials from batteries and memristors to ferroelectrics and antiferroelectrics. Optimization and design of these materials require probing the mechanisms of these transformations on the nanometer scale as a function of a broad range of control parameters, leading to experimentally intractable scenarios. Meanwhile, often these behaviors are understood within potentially competing theoretical hypotheses.

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Ferroelectric domain boundaries are quasi-two-dimensional functional interfaces with high prospects for nanoelectronic applications. Despite their reduced dimensionality, they can exhibit complex non-Ising polarization configurations and unexpected physical properties. Here, the impact of the three-dimensional (3D) curvature on the polarization profile of nominally uncharged 180° domain walls in LiNbO is studied using second-harmonic generation microscopy and 3D polarimetry analysis.

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  • Continuous advancements in electronic devices beyond traditional silicon require the integration of ferroelectric and semiconductor materials, particularly hafnium oxide (HfO).
  • Recent research shows that local helium (He) implantation can activate ferroelectric properties in HfO, although the mechanisms behind this process are still not fully understood.
  • The study explores various factors like molar volume changes and vacancy dynamics caused by He ion implantation, which provides insights into the origins of ferroelectricity and potential for developing new nanoengineered materials.
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Machine learning is rapidly becoming an integral part of experimental physical discovery via automated and high-throughput synthesis, and active experiments in scattering and electron/probe microscopy. This, in turn, necessitates the development of active learning methods capable of exploring relevant parameter spaces with the smallest number of steps. Here, an active learning approach based on conavigation of the hypothesis and experimental spaces is introduced.

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Since their discovery in late 1940s, perovskite ferroelectric materials have become one of the central objects of condensed matter physics and materials science due to the broad spectrum of functional behaviors they exhibit, including electro-optical phenomena and strong electromechanical coupling. In such disordered materials, the static properties of defects such as oxygen vacancies are well explored but the dynamic effects are less understood. In this work, the first observation of enhanced electromechanical response in BaTiO thin films is reported driven via dynamic local oxygen vacancy control in piezoresponse force microscopy (PFM).

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Ordering of mobile defects in functional materials can give rise to fundamentally new phases possessing ferroic and multiferroic functionalities. Here we develop the Landau theory for strain induced ordering of defects (e.g.

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The physics of ferroelectric domain walls is explored using the Bayesian inference analysis of atomically resolved STEM data. We demonstrate that domain wall profile shapes are ultimately sensitive to the nature of the order parameter in the material, including the functional form of Ginzburg-Landau-Devonshire expansion, and numerical value of the corresponding parameters. The preexisting materials knowledge naturally folds in the Bayesian framework in the form of prior distributions, with the different order parameters forming competing (or hierarchical) models.

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Domain walls and topological defects in ferroelectric materials have emerged as a powerful tool for functional electronic devices including memory and logic. Similarly, wall interactions and dynamics underpin a broad range of mesoscale phenomena ranging from giant electromechanical responses to memory effects. Exploring the functionalities of individual domain walls, their interactions, and controlled modifications of the domain structures is crucial for applications and fundamental physical studies.

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Article Synopsis
  • Polar van der Waals chalcogenophosphates have unique properties like negative electrostriction and multi-well ferrielectricity, allowing their use in dielectric and 2D electronic applications.
  • Using low-temperature piezoresponse force microscopy, researchers discovered piezoelectric and non-piezoelectric phases coexisting in CuInPSe, which creates unusual domain walls with a heightened piezoelectric response.
  • The findings indicate a partially polarized antiferroelectric state with distinct ferrielectric domains, supported by optical spectroscopies and calculations, paving the way for innovative use of functional domain walls in van der Waals heterostructures.
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Polarization switching in ferroelectric materials is governed by a delicate interplay between bulk polarization dynamics and screening processes at surfaces and domain walls. Here we explore the mechanism of tip-induced polarization switching at nonpolar cuts of uniaxial ferroelectrics. In this case, the in-plane component of the polarization vector switches, allowing for detailed observations of the resultant domain morphologies.

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Electrochemical strain microscopy (ESM) employs a strong electromechanical coupling in solid ionic conductors to map ionic transport and electrochemical processes with nanometer-scale spatial resolution. To elucidate the mechanisms of the ESM image formation, we performed self-consistent numerical modeling of the electromechanical response in solid electrolytes under the probe tip in a linear, small-signal regime using the Boltzmann-Planck-Nernst-Einstein theory and Vegard's law while taking account of the electromigration and diffusion. The characteristic time scales involved in the formation of the ESM response were identified.

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Electric field-induced polarization switching underpins most functional applications of ferroelectric materials in information technology, materials science and optoelectronics. Recently, much attention has been focused on the switching of individual domains using scanning probe microscopy. The classical picture of tip-induced switching, including formation of cylindrical domains with size, is largely determined by the field distribution and domain wall motion kinetics.

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Epitaxial self-assembled ferro(i)magnetic spinel (CoFe2O4 (CFO)) and ferroelectric bismuth layered perovskite (Bi5Ti3FeO15 (BTFO)) pillar-matrix nanostructures are demonstrated on (001) single-crystalline strontium titanate substrates. The CFO remains embedded in the BTFO matrix as vertical pillars (∼50 nm in diameter) up to a volume fraction of 50%. Piezoresponse force microscopy experiments evidence a weak out-of-plane and a strong in-plane ferroelectricity in the BTFO phase, despite previously reported paraelectricity along the c-axis in a pure BTFO film.

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Modulation of band bending at a complex oxide heterointerface by a ferroelectric layer is demonstrated. The as-grown polarization (Pup ) leads to charge depletion and consequently low conduction. Switching the polarization direction (Pdown ) results in charge accumulation and enhances the conduction at the interface.

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Spatial localization of the oxygen reduction/evolution reactions on lanthanum strontium cobaltite (LSCO) surfaces with perovskite and layered perovskite structures is studied at the sub-10 nm level. Comparison between electrochemical strain microscopy (ESM) and structural imaging by scanning transmission electron microscopy (STEM) suggests that small-angle grain boundaries act as regions with enhanced electrochemical activity. The ESM activity is compared across a family of LSCO samples, demonstrating excellent agreement with macroscopic behaviors.

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Heterointerface stabilization of a distinct nonpolar BiFeO3 phase occurs simultaneously with changes in octahedral tilts. The resulting phase arises via suppression of polarization by a structural order parameter and can thus be identified as anti-ferroelectric (Fe displacements - bottom panel). The phase is metastable and can be switched into a polar ferroelectric state (top panel) under an applied electric bias.

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Nanoscale electromechanical activity, remanent polarization states, and hysteresis loops in paraelectric TiO(2) and SrTiO(3) thin films are observed using scanning probe microscopy. The coupling between the ionic dynamics and incipient ferroelectricity in these materials is analyzed using extended Landau-Ginzburg-Devonshire (LGD) theory. The possible origins of electromechanical coupling including ionic dynamics, surface-charge induced electrostriction, and ionically induced ferroelectricity are identified.

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Metallic conductance in charged ferroelectric domain walls was predicted more than 40 years ago as the first example of an electronically active homointerface in a nonconductive material. Despite decades of research on oxide interfaces and ferroic systems, the metal-insulator transition induced solely by polarization charges without any additional chemical modification has consistently eluded the experimental realm. Here we show that a localized insulator-metal transition can be repeatedly induced within an insulating ferroelectric lead-zirconate titanate, merely by switching its polarization at the nanoscale.

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Macroscopic ferroelectric polarization switching, similar to other first-order phase transitions, is controlled by nucleation centres. Despite 50 years of extensive theoretical and experimental effort, the microstructural origins of the Landauer paradox, that is, the experimentally observed low values of coercive fields in ferroelectrics corresponding to implausibly large nucleation activation energies, are still a mystery. Here, we develop an approach to visualize the nucleation centres controlling polarization switching processes with nanometre resolution, determine their spatial and energy distribution and correlate them to local microstructure.

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