21 results match your criteria: "Fraunhofer Institute for Integrated Systems and Device Technology IISB[Affiliation]"
Micron
November 2025
Forschungszentrum Jülich GmbH, Helmholtz Institute Erlangen-Nürnberg for Renewable Energy (IET-2), Cauerstraße 10, Erlangen, 91058, Germany.
Thick transparent substrates are a key component for transmissive thin film optical filters and optoelectronics. In optical characterization of such substrates, light reflected from the backside - whether fully or partially detected - interferes with light directly reflected from the substrate's front side. Herein, we introduce a straightforward approach for microspectroscopic measurements, with lateral dimensions in the micrometer range, to reliably assess the amount of measured backside reflectance.
View Article and Find Full Text PDFMaterials (Basel)
August 2024
Si Special Devices Group, Research and Development Semiconductor Devices, Fraunhofer Institute for Integrated Systems and Device Technology IISB, Schottkystrasse 10, 91058 Erlangen, Germany.
In this paper, we present an optimization of the planar manufacturing scheme for stretch-free, shape-induced metal interconnects to simplify fabrication with the aim of maximizing the flexibility in a structure regarding stress and strain. The formation of trenches between silicon islands is actively used in the lithographic process to create arc shape structures by spin coating resists into the trenches. The resulting resist form is used as a template for the metal lines, which are structured on top.
View Article and Find Full Text PDFJ Phys Condens Matter
November 2023
Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstrasse 400, 01328 Dresden, Germany.
Direct-band-gap Germanium-Tin alloys (GeSn) with high carrier mobilities are promising materials for nano- and optoelectronics. The concentration of open volume defects in the alloy, such as Sn and Ge vacancies, influences the final device performance. In this article, we present an evaluation of the point defects in molecular-beam-epitaxy grown GeSnfilms treated by post-growth nanosecond-range pulsed laser melting (PLM).
View Article and Find Full Text PDFSmall Methods
October 2023
Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU), Electron Devices, Cauerstraße 6, 91058, Erlangen, Germany.
Van der Waals materials exhibit intriguing properties for future electronic and optoelectronic devices. As those unique features strongly depend on the materials' thickness, it has to be accessed precisely for tailoring the performance of a specific device. In this study, a nondestructive and technologically easily implementable approach for accurate thickness determination of birefringent layered materials is introduced by combining optical reflectance measurements with a modular model comprising a 4×4 transfer matrix method and the optical components relevant to light microspectroscopy.
View Article and Find Full Text PDFAdv Sci (Weinh)
September 2023
GFZ German Research Center for Geosciences, Telegrafenberg, 14473, Potsdam, Germany.
Liquid-Phase Transmission Electron Microscopy (LP-TEM) enables in situ observations of the dynamic behavior of materials in liquids at high spatial and temporal resolution. During LP-TEM, incident electrons decompose water molecules into highly reactive species. Consequently, the chemistry of the irradiated aqueous solution is strongly altered, impacting the reactions to be observed.
View Article and Find Full Text PDFJ Phys Chem Lett
May 2023
Helmholtz Institute Erlangen-Nürnberg for Renewable Energy (IEK-11), Forschungszentrum Jülich GmbH, Cauerstraße 1, 91058 Erlangen, Germany.
Advanced techniques based on electrons and X-rays are increasingly used to gain insights into fundamental processes in liquids. However, probing liquid samples with ionizing radiation changes the solution chemistry under observation. In this work, we show that a radiation-induced decrease in pH does not necessarily correlate to an increase in acidity of aqueous solutions.
View Article and Find Full Text PDFSci Rep
January 2023
Fraunhofer Institute for Integrated Systems and Device Technology IISB, Schottkystraße 10, 91058, Erlangen, Germany.
J Phys Condens Matter
December 2022
Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstrasse 400, 01328 Dresden, Germany.
The pseudomorphic growth of GeSnon Ge causes in-plane compressive strain, which degrades the superior properties of the GeSnalloys. Therefore, efficient strain engineering is required. In this article, we present strain and band-gap engineering in GeSnalloys grown on Ge a virtual substrate using post-growth nanosecond pulsed laser melting (PLM).
View Article and Find Full Text PDFAdv Sci (Weinh)
September 2022
Electron Devices (LEB), Department of Electrical, Electronic and Communication Engineering, Friedrich-Alexander-Universität Erlangen-Nürnberg, Cauerstraße 6, 91058, Erlangen, Germany.
Ultramicroscopy
May 2022
Institute of Micro- and Nanostructure Research (IMN) & Center for Nanoanalysis and Electron Microscopy (CENEM), Interdisciplinary Center for Nanostructured Films (IZNF), Department of Materials Science and Engineering, FAU, Cauerstraße 3, 91058 Erlangen, Germany. Electronic address: erdmann.spiecke
In situ TEM utilizing windowed gas cells is a promising technique for studying catalytic processes, wherein temperature is one of the most important parameters to be controlled. Current gas cells are only capable of temperature measurement on a global (mm) scale, although the local temperature at the spot of observation (µm to nm scale) may significantly differ. Thus, local temperature fluctuations caused by gas flow and heat dissipation dynamics remain undetected when solely relying on the global device feedback.
View Article and Find Full Text PDFGels
January 2022
Faculty of Automation, Computers, Electrical Engineering and Electronics, "Dunarea de Jos" University of Galati, Ştiinţei 2, 800210 Galaţi, Romania.
Bottom-up approaches in solutions enable the low-temperature preparation of hybrid thin films suitable for printable transparent and flexible electronic devices. We report the obtainment of new transparent PMMA/ZrO nanostructured -building blocks (nBBs) hybrid thin films (61-75 nm) by a modified sol-gel method using zirconium ethoxide, Zr(OEt), and 3-methacryloxypropyl trimethoxysilane (MPS) as a coupling agent and methylmethacrylate monomer (MMA). The effect of low-temperature and UV irradiation on the nBBs gel films is discussed.
View Article and Find Full Text PDFNat Mater
January 2022
3rd Institute of Physics, IQST, and Research Centre SCoPE, University of Stuttgart, Stuttgart, Germany.
Nanoscale Adv
May 2021
Institute of Micro- and Nanostructure Research (IMN) & Center for Nanoanalysis and Electron Microscopy (CENEM), Interdisciplinary Center for Nanostructured Films (IZNF), Department of Materials Science and Engineering, Friedrich-Alexander University Erlangen-Nürnberg (FAU) Cauerstraße 3 91058 Erla
Sci Rep
October 2020
Fraunhofer Institute for Integrated Systems and Device Technology IISB, Schottkystr. 10, 91058, Erlangen, Germany.
GaN epitaxially grown on Si is a material for power electronics that intrinsically shows a high density of dislocations. We show by Conductive Atomic Force Microscopy (C-AFM) and Defect Selective Etching that even for materials with similar total dislocation densities substantially different subsets of dislocations with screw component act as current leakage paths within the AlGaN barrier under forward bias. Potential reasons are discussed and it will be directly shown by an innovative experiment that current voltage forward characteristics of AlGaN/GaN Schottky diodes shift to lower absolute voltages when such dislocations are present within the device.
View Article and Find Full Text PDFMaterials (Basel)
September 2020
Department of Information Engineering, University of Padova, 35151 Padova, Italy.
The aim of this work is to demonstrate high breakdown voltage and low buffer trapping in superlattice GaN-on-Silicon heterostructures for high voltage applications. To this aim, we compared two structures, one based on a step-graded (SG) buffer (reference structure), and another based on a superlattice (SL). In particular, we show that: (i) the use of an SL allows us to push the vertical breakdown voltage above 1500 V on a 5 µm stack, with a simultaneous decrease in vertical leakage current, as compared to the reference GaN-based epi-structure using a thicker buffer thickness.
View Article and Find Full Text PDFSci Rep
August 2020
Fraunhofer Institute for Integrated Systems and Device Technology IISB, Schottkystraße 10, 91058, Erlangen, Germany.
The composition of Van-der-Waals heterostructures is conclusively determined using a hybrid evaluation scheme of data acquired by optical microspectroscopy. This scheme deploys a parameter set comprising both change in reflectance and wavelength shift of distinct extreme values in reflectance spectra. Furthermore, the method is supported by an accurate analytical model describing reflectance of multilayer systems acquired by optical microspectroscopy.
View Article and Find Full Text PDFMicromachines (Basel)
January 2020
Department of Information Engineering, University of Padova, 35151 Padova, Italy.
We investigated the origin of vertical leakage and breakdown in GaN-on-Si epitaxial structures. In order to understand the role of the nucleation layer, AlGaN buffer, and C-doped GaN, we designed a sequential growth experiment. Specifically, we analyzed three different structures grown on silicon substrates: AlN/Si, AlGaN/AlN/Si, C:GaN/AlGaN/AlN/Si.
View Article and Find Full Text PDFPolymers (Basel)
December 2018
Institute for Biophysics, Department of Nanobiotechnology, University of Natural Resources and Life Sciences Vienna (BOKU), Muthgasse 11, 1190 Vienna, Austria.
New strategies in regenerative medicine include the implantation of stem cells cultured in bio-resorbable polymeric scaffolds to restore the tissue function and be absorbed by the body after wound healing. This requires the development of appropriate micro-technologies for manufacturing of functional scaffolds with controlled surface properties to induce a specific cell behavior. The present report focuses on the effect of substrate topography on the behavior of human mesenchymal stem cells (MSCs) before and after co-differentiation into adipocytes and osteoblasts.
View Article and Find Full Text PDFNano Lett
November 2018
Electron Devices (LEB), Department of Electrical, Electronic and Communication Engineering , Friedrich-Alexander University Erlangen-Nürnberg (FAU), Cauerstraße 6 , 91058 Erlangen , Germany.
The growth of silver shells on gold nanorods is investigated by in situ liquid cell transmission electron microscopy using an advanced liquid cell architecture. The design is based on microwells in which the liquid is confined between a thin SiN membrane on one side and a few-layer graphene cap on the other side. A well-defined specimen thickness and an ultraflat cell top allow for the application of high-resolution TEM and the application of analytical TEM techniques on the same sample.
View Article and Find Full Text PDFAngew Chem Int Ed Engl
March 2016
Department of Materials Science WW-4, LKO, University of Erlangen-Nuremberg, Martensstrasse 7, 91058, Erlangen, Germany.
Nano Lett
October 2015
Department of Materials Science WW-4, LKO, University of Erlangen-Nuremberg, Martensstrasse 7, 91058 Erlangen, Germany.
We apply high-energy proton ion-implantation to modify TiO2 nanotubes selectively at their tops. In the proton-implanted region, we observe the creation of intrinsic cocatalytic centers for photocatalytic H2-evolution. We find proton implantation to induce specific defects and a characteristic modification of the electronic properties not only in nanotubes but also on anatase single crystal (001) surfaces.
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