98%
921
2 minutes
20
Conventional polymers exhibit low intrinsic thermal conductivity (λ) of 0.1∼0.5 W/(m·K) due to disordered chain arrangements, failing to meet the heat dissipation demands of high-power flexible electronic devices. This study proposes a molecular level design strategy for side-chain azobenzene-containing semicrystalline polymers that demonstrate exceptional intrinsic thermal conductivity with photoresponsive actuation and recyclability. By precisely regulating the spatial distribution and content of azobenzene groups and hydrogen-bond network along the polymer chain through controlled radical polymerization, a thermal conduction network featuring "high-efficiency conduction within crystal domains and low-resistance interfacial connections" was constructed. Azobenzene moieties self-assemble into highly oriented crystalline domains through π-π stacking, where their dense packing significantly enhances phonon coupling efficiency and increases phonon mean free paths. Concurrently, the dynamic reversibility of hydrogen bonds guides domain-boundary molecular chains to form gradual phase transitions, suppressing phonon scattering at amorphous-crystalline interfaces and improving phonon transport efficiency. The film of random copolymer with 35 azobenzene units achieves an outstanding highest intrinsic λ of 2.01 W/(m·K), representing a substantial improvement over its block copolymer counterpart (with a higher crystallinity) and traditional polymers. Additionally, the photoisomerization property of azobenzene endows the material with light-controlled dynamic deformation capabilities. Meanwhile, the noncrosslinked polymer films feature easy recyclability/reprocessability.
Download full-text PDF |
Source |
---|---|
http://dx.doi.org/10.1002/anie.202512721 | DOI Listing |
ACS Appl Mater Interfaces
September 2025
Department of Chemical Engineering, School of Chemical Engineering, Dalian University of Technology, Dalian 116024, P. R. China.
Developing scalable and robust deicing coatings is essential for real-world applications, yet current coatings either suffer from intrinsic fragility or low thermal conductivity, limiting sustainability and deicing effectiveness. Here, we report a scalable and durable photothermal superhydrophobic coating coupling with enhanced thermal conductivity, engineered by embedding carbon nanotubes within a perfluoroalkoxy polymer matrix. Our design achieved 97.
View Article and Find Full Text PDFTemperature (Austin)
March 2025
Department of Anaesthesiology and Intensive Care, Akershus University Hospital, Lørenskog, Norway.
Swimming in cold water is intrinsically unsafe. One of the threats is a fall in deep-body temperature, which adversely affects all body systems and increases the risk of death. Wetsuits mitigate, but do not negate this threat.
View Article and Find Full Text PDFAngew Chem Int Ed Engl
September 2025
State Key Laboratory of Luminescent Materials and Devices, Guangdong Provincial Key Laboratory of Luminescence from Molecular Aggregates, South China University of Technology, Guangzhou, 510640, China.
Reverse intersystem crossing (RISC) process is critical for thermally activated delayed fluorescence (TADF) materials to realize spin-flip of triplet excitons in organic light-emitting diodes (OLEDs), but the RISC processes of most TADF materials are not fast enough, undermining electroluminescence (EL) efficiency stability and operational lifetime. Herein, a symmetry breaking strategy to accelerate RISC processes is proposed. By designing asymmetric electron-withdrawing backbone consisting of benzonitrile and xanthone/thioxanthone groups, two new asymmetric TADF molecules, 4tCzCN-pXT and 4tCzCN-pTXT, with multiple 3,6-di-tert-butylcarbazole donors are successfully developed.
View Article and Find Full Text PDFACS Appl Mater Interfaces
September 2025
National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan.
In this study, we analyze InO thin-film transistors (InO-TFT) using synchrotron-based hard X-ray photoelectron spectroscopy (HAXPES) in conditions. A bottom-gate InO-TFT with a high- AlO gate dielectric, grown on thermally oxidized silicon (SiO/p-Si), was examined while operating at varying and . The results reveal that the In 3d core level binding energy varies along the horizontal channel length, driven by the potential gradient induced by .
View Article and Find Full Text PDFACS Nano
September 2025
State Key Lab of New Ceramic Materials, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China.
SnSe is a layered semiconductor with intrinsically low thermal conductivity, making it a promising candidate for thermoelectric and thermal management applications. However, detailed measurements of the intrinsic thermal conductivity of SnSe nanosheets grown by chemical vapor deposition (CVD) remain scarce. Here, monocrystalline SnSe nanosheets were synthesized by CVD, with systematic investigation of thickness-dependent in-plane thermal conductivity.
View Article and Find Full Text PDF