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The demand for deformable optoelectronic devices that are bendable, stretchable, and foldable has significantly increased. Accordingly, recent research has focused on ensuring the flexibility and stretchability of devices under various deformation modes, making the evaluation and enhancement of the mechanical reliability crucial. Here, we review strategies to improve the flexibility and stretchability of deformable optoelectronic devices, including intrinsic approaches to increasing the elastic deformation limit of materials and extrinsic structural design strategies at the device level. We introduce recent advances in the mechanical reliability of these devices in different deformation modes. Furthermore, we discuss mechanical testing methods for enhancing mechanical reliability, including conventional bulk-scale mechanical testing, nanomechanical tests for constituent thin-layer materials, and computational simulation tools for analysis and prediction.
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http://dx.doi.org/10.1021/acsami.5c10681 | DOI Listing |
J Phys Chem Lett
September 2025
Department of Earth System Sciences, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea.
We present a systematic high-pressure investigation of the chlorine-functionalized two-dimensional hybrid perovskite (ClPMA)PbI, integrating high-pressure synchrotron powder X-ray diffraction (HP-PXRD), photoluminescence spectroscopy (HP-PL), and first-principles density functional theory (DFT) calculations. Under hydrostatic compression up to 6.18 (±0.
View Article and Find Full Text PDFCell Rep Med
August 2025
Center for Biomedical-photonics and Molecular Imaging, Advanced Diagnostic-Therapy Technology and Equipment Key Laboratory of Higher Education Institutions in Shaanxi Province, School of Life Science and Technology, Xidian University, Xi'an, Shaanxi 710126, China; Engineering Research Center of Mole
Rapid identification and accurate diagnosis are critical for individuals with acute leukemia (AL). Here, we propose a combined deep learning and surface-enhanced Raman scattering (DL-SERS) classification strategy to achieve rapid and sensitive identification of AL with various subtypes and genetic abnormalities. More than 390 of cerebrospinal fluid (CSF) samples are collected as targets, encompassing healthy control, AL patients, and individuals with other diseases.
View Article and Find Full Text PDFAdv Mater
September 2025
Faculty of Chemistry, Adam Mickiewicz University, Uniwersytetu Poznańskiego 8, Poznań, 61-614, Poland.
AlN is a core material widely used as a substrate and heat sink in various electronic and optoelectronic devices. Introducing luminescent properties into intrinsic AIN opens new opportunities for next-generation intelligent sensors, self-powered displays, and wearable electronics. In this study, the first evidence is presented of AlN crystals exhibiting satisfactory mechanoluminescence (ML), photoluminescence (PL), and afterglow performance, demonstrating their potential as novel multifunctional optical sensors.
View Article and Find Full Text PDFMagn Reson Lett
May 2025
Department of Medical Imaging, Tianjin First Central Hospital, Tianjin, 300192, China.
Hepatic encephalopathy (HE) is a neurological condition that occurs as a complication of liver dysfunction that involves sensorimotor symptoms in addition to cognitive and behavioral changes, particularly in cases of severe liver disease or cirrhosis. Previous studies have reported spatially distributed structural and functional abnormalities related to HE, but the exact relationship between the structural and functional alterations with respect to disease progression remains unclear. In this study, we performed surface-based cortical thickness comparisons and functional connectivity (FC) analyses between three cross-sectional groups: healthy controls (HC, = 51), patients with minimal hepatic encephalopathy (MHE, = 50), patients with overt hepatic encephalopathy (OHE, = 51).
View Article and Find Full Text PDFNanotechnology
September 2025
State Key Laboratory of Optoelectronic Materials and Technologies School of Chemistry and Chemical Engineering, Sun Yat-Sen University, No 135, XinGangXi Road, Guangzhou 510275, guangzhou, 510275, CHINA.
Silicon carbide nanowires (SiC NWs) combine the benefits of bulk SiC materials with the properties of low-dimensional nanomaterials. They are known for their excellent mechanical strength and durability, which are critical for their potential applications in high-stress environments and micro-nano functional systems. Here, the mechanical properties and deformation mechanisms of 2H-SiC NWs with rare defects in the [0001] orientation are reported.
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