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CrSBr is a promising material for optoelectronics due to its robust excitonic resonance and the intricate interplay among its magnetic, optical, and electronic properties. Here, electron energy loss spectroscopy performed in a scanning transmission electron microscope at room temperature reveals an unconventional blueshift in CrSBr exciton energy with increasing thickness, contrary to the typical redshift observed in other two-dimensional semiconductors. This blueshift is attributed to the decrease in bandgap size with increasing thickness being less pronounced than the reduction in exciton binding energy. This phenomenon may stem from the charge-transfer bandgap and strong frequency-dependent dielectric screening in CrSBr. Furthermore, analysis of excitonic behavior across interfaces with varying thicknesses at subnanometer resolution reveals a relatively localized exciton nature in CrSBr's paramagnetic state. This study enhances comprehension of intrinsic excitonic properties in CrSBr at room temperature and provides valuable insights into its band structure, facilitating exciton control for future optoelectronic applications.
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http://dx.doi.org/10.1021/acs.nanolett.5c02676 | DOI Listing |
J Phys Chem Lett
September 2025
School of Chemical Sciences, National Institute of Science Education and Research (NISER), An OCC of Homi Bhabha National Institute Jatni, Khurda, Bhubaneswar 752050, Odisha, India.
Quantum-confined perovskites represent an emerging class of materials with great potential for optoelectronic applications. Specifically, zero-dimensional (0D) perovskites have garnered significant attention for their unique excitonic properties. However, achieving phase-pure, size-tunable 0D perovskite materials and gaining a clear understanding of their photophysical behavior remains challenging.
View Article and Find Full Text PDFDue to its sizable direct bandgap and strong light-matter interactions, the preparation of monolayer MoS has attracted significant attention and intensive research efforts. However, multilayer MoS is largely overlooked because of its optically inactive indirect bandgap caused by interlayer coupling. It is highly desirable to modulate and decrease the interlayer coupling so that each layer in multilayer MoS can exhibit a monolayer-like direct-gap behavior.
View Article and Find Full Text PDFNanoscale
September 2025
Department of Chemistry, Kyung Hee University, Seoul 02447, Korea.
Highly efficient optoelectronic devices of ultrasmall sizes are demanded as building blocks of next-generation integrated circuits, where tunable color enhances the feasibility of various applications. Here, we realize tunable multicolor nanolasers using disk-shaped axial heterostructures composed of III-nitride materials (GaN/InGaN/GaN), leveraging the optical confinement effect and active waveguiding. In heterostructure nanodisks, the development of exciton-polariton induces unique features near the resonance regime, and the formation of whispering-gallery modes facilitates optical gain processes for the polaritonic lasing of GaN.
View Article and Find Full Text PDFChem Sci
August 2025
Department of Applied Biology and Chemical Technology, The Hong Kong Polytechnic University Hung Hom Hong Kong China
The development of high-performance near-ultraviolet organic light-emitting diodes (NUV-OLEDs) remains challenging due to their intrinsic wide-bandgap characteristics. Therefore, this study fully exploits the weak electron-accepting characteristics of the PPI group, combined with its high photoluminescence quantum yield (PLQY) and excellent thermal stability. Through a precise molecular structure modulation strategy involving direct introduction of electron-donating diphenylamine groups into the side phenyl ring and systematic integration of donor/acceptor units with tailored electronic properties into the main backbone, effective control of excited-state characteristics and their spatial distribution was successfully achieved.
View Article and Find Full Text PDFJ Phys Chem Lett
September 2025
State Key Laboratory of Chemistry for NBC Hazards Protection, College of Chemistry, Fuzhou University, Fuzhou 350116, China.
Two-dimensional (2D) group III-IV-VI semiconductors show great potential for application in energy conversion fields. Herein, using density functional theory (DFT) calculations in conjunction with nonadiabatic molecular dynamics (NAMD) simulations and the nonequilibrium Green's function (NEGF) method, the photovoltaic performance of MGeSe (M = Ga and In) monolayers is systematically investigated. The MGeSe monolayers exhibit direct band gap semiconductor characteristics with strong optical absorption in the visible light region.
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