Stacking-Selective Epitaxy of Rare-Earth Diantimonides.

Nano Lett

Department of Applied Physics and Materials Science, California Institute of Technology, Pasadena, California 91125, United States.

Published: July 2025


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Article Abstract

Deterministic control of the layering configuration of two-dimensional quantum materials plays a central role in studying their emergent electronic properties. Here we demonstrate control over competing stacking configurations in thin film crystals of the rare-earth diantimonides by synthesizing in proximity to competing structural orders. A crossover between the epitaxially stabilized monoclinic structure and the orthorhombic structure commonly observed in bulk crystals is navigated through three axes─the relative cation/anion ratio, growth temperature, and choice of lanthanide ion─culminating with a comparative magnetotransport study of single-yet-distinct phase CeSb films. These results set the stage for an expanded search for hidden stacking configurations in layered compounds which have evaded detection.

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http://dx.doi.org/10.1021/acs.nanolett.5c02665DOI Listing

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Stacking-Selective Epitaxy of Rare-Earth Diantimonides.

Nano Lett

July 2025

Department of Applied Physics and Materials Science, California Institute of Technology, Pasadena, California 91125, United States.

Deterministic control of the layering configuration of two-dimensional quantum materials plays a central role in studying their emergent electronic properties. Here we demonstrate control over competing stacking configurations in thin film crystals of the rare-earth diantimonides by synthesizing in proximity to competing structural orders. A crossover between the epitaxially stabilized monoclinic structure and the orthorhombic structure commonly observed in bulk crystals is navigated through three axes─the relative cation/anion ratio, growth temperature, and choice of lanthanide ion─culminating with a comparative magnetotransport study of single-yet-distinct phase CeSb films.

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