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Article Abstract
Vertical p-i-n junctions are key components for optoelectronics to achieve fast response speed. However, a critical bottleneck lies in the complex fabrication techniques and the performance tradeoff between high responsivity and fast speed, especially under self-powered mode. Here, we illustrate the superiority of 2D materials-based vertical p-i-n photodiodes with maximized optical absorption in intrinsic layer (high responsivity), the efficient photocarrier separation (self-power ability), and the high-field drift velocity (fast speed). By optimizing the photocarrier generation/transfer dynamics via doping and thickness engineering, our device with zero voltage bias achieves high built-in electric field, leading to a high responsivity of 0.388 A W and an EQE of 90.5% at 532 nm, a short intrinsic response time of sub-10 ps, a fast switching response time of 23 ns, and a high power conversion efficiency of 6.5%. Our work lays the foundation to resolve the responsivity-speed dilemma without the constraint of lattice mismatch.
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| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC12214850 | PMC |
| http://dx.doi.org/10.1038/s41467-025-60573-z | DOI Listing |
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