2D van der Waals heterostructure memristors: from band structure regulation to neuromorphic computing applications.

Mater Horiz

Guangdong Provincial Key Laboratory of Sensing Physics and System Integration Applications, Guangdong University of Technology, Guangzhou Higher Education Mega Center, Guangzhou 510006, China.

Published: June 2025


Category Ranking

98%

Total Visits

921

Avg Visit Duration

2 minutes

Citations

20

Article Abstract

Two-dimensional (2D) materials and their van der Waals heterostructures (vdWHs) have shown tremendous potential in the fields of memristors and neuromorphic computing due to their unique band structures and tunable physical properties. This paper reviews the band structures of 2D vdWHs, as well as the mechanisms for their regulation, and discusses the impact of preparation methods such as wet and dry transfer on the interfaces of heterojunctions. On this basis, it delves into the switching mechanisms of memristors based on vdWHs, including the conductive filament model, charge trapping and release, and interfacial barrier modulation. Furthermore, the review focuses on the applications of vdWH memristors in neuromorphic synapses, such as optoelectronic synapses, artificial vision, ferroelectric effect regulation, logical circuit design, and reservoir computing. These applications not only promote the development of neuromorphic computing but also provide new solutions for the next generation of low-power, high-integration artificial intelligence hardware. Finally, the review summarizes the current research challenges and future development directions, offering theoretical guidance and technical prospects for memristors based on 2D vdWHs and their applications in neuromorphic computing.

Download full-text PDF

Source
http://dx.doi.org/10.1039/d5mh00306gDOI Listing

Publication Analysis

Top Keywords

neuromorphic computing
16
van der
8
der waals
8
computing applications
8
memristors neuromorphic
8
band structures
8
memristors based
8
based vdwhs
8
memristors
5
neuromorphic
5

Similar Publications

Beyond Fixed-Size Skyrmions in Nanodots: Switchable Multistability with Ferromagnetic Rings.

Nano Lett

September 2025

Depto. Polimeros y Materiales Avanzados: Fisica, Quimica y Tecnologia, Universidad del País Vasco, UPV/EHU, 20018 San Sebastian, Spain.

We demonstrate a novel approach to controlling and stabilizing magnetic skyrmions in ultrathin multilayer nanostructures through spatially engineered magnetostatic fields generated by ferromagnetic nanorings. Using analytical modeling and micromagnetic simulations, we show that the stray fields from a Co/Pd ferromagnetic ring with out-of-plane magnetic anisotropy significantly enhance the Néel-type skyrmion stability in an Ir/Co/Pt nanodot, even stabilizing the skyrmion in the absence of Dzyaloshinskii-Moriya interactions. We demonstrate precise control over the skyrmion size and stability.

View Article and Find Full Text PDF

Field Driven Solid-State Defect Control of Bilayer Switching Devices: Ionic Transport Kinetics within Layers and across the Interfaces.

ACS Appl Mater Interfaces

September 2025

Department of Material Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States.

Nanoionic devices, crucial for neuromorphic computing and ionically enabled functional actuators, are often kinetically limited. In bilayer configurations, experimentally deconvoluting ion transport within individual layers from the kinetics of transfer across solid-solid interfaces, however, remains a challenge, hindering rational device optimization. Here, we extend the dynamic current-voltage (-) technique to a PrCeO/LaCeCuO (PCO/LCCO) bilayer system, enabling the isolation and quantification of distinct ion transport processes.

View Article and Find Full Text PDF

Near-infrared Artificial Synapse Based on a Pristine InGaAs Nanowire Synaptic Transistor.

Nanotechnology

September 2025

Beijing University of Technology, Key Laboratory of Optoelectronics Technology, School of Information Science and Technology., Beijing, 100124, CHINA.

The rapid advancements in the field of artificial intelligence have intensified the urgent need for low-power, high-speed artificial synaptic devices. Here, a near-infrared (NIR) artificial synaptic device is successfully realized based on pristine InGaAs nanowires (NWs), which achieves a paired-pulse facilitation (PPF) of up to 119%. Additionally, a postsynaptic current (PSC) in memory storage behavior has been implemented by applying different voltage pulses along with continuous illumination of 1064 nm NIR light due to the memristor characteristics of the device.

View Article and Find Full Text PDF

Sparse Learning Enabled by Constraints on Connectivity and Function.

Phys Rev Lett

August 2025

Northeastern University, Department of Physics, Center for Theoretical Biological Physics, Boston, Massachusetts 02115, USA.

Sparse connectivity is a hallmark of the brain and a desired property of artificial neural networks. It promotes energy efficiency, simplifies training, and enhances the robustness of network function. Thus, a detailed understanding of how to achieve sparsity without jeopardizing network performance is beneficial for neuroscience, deep learning, and neuromorphic computing applications.

View Article and Find Full Text PDF

Van der Waals Epitaxy of CsPbI/MoS Heterojunction Phototransistors for Neuromorphic Computing.

J Phys Chem Lett

September 2025

Hunan Key Laboratory of Nanophotonics and Devices, Hunan Key Laboratory of Super Microstructure and Ultrafast Process, School of Physics, Central South University, Changsha, Hunan 410083, China.

The optoelectronic properties of perovskite/two-dimensional (2D) material van der Waals heterojunctions provide greater potential for innovative neuromorphic devices. However, the traditional growth of heterojunctions still relies on strict lattice matching and high-temperature processes, which hinder high-quality interface construction and efficient carrier transport. Here, the 2D CsPbI/MoS heterojunction is realized via the van der Waals epitaxy process, overcoming lattice matching limitations.

View Article and Find Full Text PDF