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The detection of various biomarkers using field-effect transistor (FET) biosensors is expected to effectively contribute to the promotion of human health. Aptamers, single-stranded DNA molecules, are promising candidates as receptors for FET biosensors, capable of recognizing a wide range of targets from viruses to small-molecule hormones. By immobilizing aptamers on the FET gate surface through terminally modified functional groups, effective changes in surface potential can be induced upon binding to the target molecule. In this study, we investigated a method for immobilizing thiol-terminated aptamers onto surfaces modified with an amine-terminated self-assembled monolayer (SAM) using N-succinimidyl 3-(2-pyridyldithio)propionate (SPDP), a cross-linker for amine-to-thiol conjugation. A terminal immobilization of the aptamer effectively facilitated the capture of the model target, (cortisol; stress hormone) along with an accompanying conformational change of the aptamer. Furthermore, an aptamer-immobilized FET fabricated via disulfide bonding successfully demonstrated specific cortisol detection in the nanomolar range.
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http://dx.doi.org/10.1016/j.colsurfb.2025.114842 | DOI Listing |
J Mol Model
September 2025
Department of Electronics and Communication Engineering, National Institute of Technology Patna, Patna, Bihar, India.
Context: This study investigates the radiation tolerance of a SiGe source vertical tunnel field effect transistor (VTFET) under heavy ion-induced single event effects (SEEs). Single event effects (SEEs) occur when high-energy particles interact with semiconductor devices, leading to unintended behavior. The effect of high energy ions on the VTFET is examined for various linear energy transfer (LET) values and at multiple ion hit locations.
View Article and Find Full Text PDFAdv Mater
September 2025
State Key Laboratory of Fabrication Technologies for Integrated Circuits, Chinese Academy of Sciences, Beijing, 100029, China.
The monolayer transistor, where the semiconductor layer is a single molecular layer, offers an ideal platform for exploring transport mechanisms both theoretically and experimentally by eliminating the influence of spatially correlated microstructure. However, the structure-property relations in polymer monolayers remain poorly understood, leading to low transistor performance to date. Herein, a self-confinement effect is demonstrated in the polymer monolayer with nanofibrillar microstructures and edge-on orientation, as characterized by the 4D scanning confocal electron diffraction method.
View Article and Find Full Text PDFACS Appl Mater Interfaces
September 2025
N.N. Vorozhtsov Novosibirsk Institute of Organic Chemistry SB RAS, Novosibirsk 630090, Russia.
While fluorene-containing materials are widely used in organic optoelectronics as bright emitters and hole semiconductors, their diazafluorene analogues have been poorly explored, though their nitrogen atoms could result in electron transport and bring sensory abilities. Here, we report the synthesis, characterization, and detailed study of a series of 4,5-diazafluorene-derivatives with different donor/acceptor substituents and organic semiconductors based on these molecules. The crystal structures of all the materials were solved by X-ray diffraction, indicating the presence of extensive π-stacking and anisotropic charge-transfer pathways.
View Article and Find Full Text PDFACS Appl Mater Interfaces
September 2025
Nanoelectronics Graphene and 2D Materials Laboratory, CITIC-UGR, Department of Electronics, University of Granada, Granada 18014, Spain.
The relentless scaling of semiconductor technology demands materials beyond silicon to sustain performance improvements. Transition metal dichalcogenides (TMDs), particularly MoS, offer excellent electronic properties; however, achieving scalable and CMOS-compatible fabrication remains a critical challenge. Here, we demonstrate a scalable and BEOL-compatible approach for the direct wafer-scale growth of MoS devices using plasma-enhanced atomic layer deposition (PE-ALD) at temperatures below 450 °C, fully compliant with CMOS thermal budgets.
View Article and Find Full Text PDFNanoscale
September 2025
School of Chemistry and Chemical Engineering, Chongqing University, Chongqing, 401331, China.
Chemical doping has emerged as a powerful approach for modulating the electronic properties of graphene, and particularly for enabling its integration into advanced electronic and optoelectronic devices. While considerable progress has been made in achieving stable p-type doping, realizing efficient and reliable n-type doping remains a greater challenge due to the inherent instability of most electron-donating dopants and intrinsic semi-metallic nature of pristine graphene. This review summarises the recent developments in n-type chemical doping of graphene films, with a primary focus on substitutional doping and surface charge transfer mechanisms.
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