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The interfaces of perovskite film are most susceptible to degradation during perovskite solar cell (PSC) operation. Previous efforts mainly focused on the degradation pathways of either independent upper or buried interfaces, while thorough and meticulous consideration of the disparity in electrical bias and light field difference between these interfaces during operation still remains unexplored. Herein, it is uncovered that the electrical bias significantly influences the operation degradation of perovskite interfaces in both n-i-p and p-i-n PSCs. More pronounced degradation has been found at the positive bias interface (perovskite/hole transporting layer interface) compared to the negative bias interface (perovskite/electron transporting layer interface). In the case of n-i-p PSCs, more severe degradation is mainly due to the electrochemical oxidation reaction catalyzed by diffused gold with high concentration of photogenerated holes at the positive bias interface. For p-i-n PSCs, the electrochemical oxidation reaction still occurs at the positive bias interface, inducing direct oxidation of silver with iodine species and photogenerated holes into silver iodide. Moreover, the incident light synergistically contributes to positive bias interface degradation in p-i-n PSCs. This work provides valuable guidance for understanding the degradation mechanism of different perovskite interfaces under different physical and chemical environment during device operation.
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http://dx.doi.org/10.1002/smll.202502989 | DOI Listing |
Nano Lett
September 2025
Shaanxi Joint Lab of Graphene, State Key Laboratory of Photon-Technology in Western China Energy, International Collaborative Center on Photoelectric Technology and Nano Functional Materials, Institute of Photonics & Photon-Technology School of Physics Northwest University, Xi'an 710069, China.
The semiconductor-electrolyte interface with strong electrical tunability offers a platform for tuning nonlinear optical (NLO) processes and achieving giant optical nonlinearities. However, such a demonstration and fundamental mechanistic understanding of electrochemically tuned NLO properties have not been reported. Here, we developed an electrochemical Z-scan system to characterize the evolution of NLO responses in tellurium nanorod films under bias voltage.
View Article and Find Full Text PDFJ Colloid Interface Sci
September 2025
College of Physics and Electronic Information, Yunnan Key Laboratory of Optoelectronic Information Technology, Yunnan Normal University, Kunming 650500, China. Electronic address:
Antimony trisulfide (SbS) has emerged as a promising inorganic semiconductor for optoelectronics due to its distinctive anisotropic crystal structure and suitable bandgap (∼1.7 eV). While hydrothermal synthesis remains challenging for achieving high crystallinity and controlled morphology, we developed an innovative dual‑sulfur precursor strategy utilizing sodium thiosulfate (STS) and thioacetamide (TAA) at a 7:2 M ratio with SbCl.
View Article and Find Full Text PDFACS Appl Mater Interfaces
September 2025
Division of Nano Life Science, Kanazawa University, Kakuma-machi, 920-1192 Kanazawa, Japan.
Atomic force microscopy (AFM) imaging of ionic liquid (IL) distribution in electric double-layer (EDL) devices has been actively explored to understand the origin of their excellent performance. However, this has been impeded by insufficient resolution or a poor understanding of the mechanisms of 3D IL imaging. Here, we overcome these difficulties using 3D scanning force microscopy (3D-SFM) with variable tip/sample bias voltages for visualizing 3D ,-diethyl--methyl--(2-methoxyethyl)ammonium bis(trifluoromethanesulfonyl)imide (DEME-TFSI) distributions on a Au electrode in EDL capacitors.
View Article and Find Full Text PDFMikrochim Acta
September 2025
Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing, 400714, China.
A novel ternary synergistic photoelectrochemical (PEC) probe is presented utilizing metal-organic framework (MOF)-templated Pd/CdS@CoS nanocages for sensing chlorpyrifos (CPF) using chronoamperometry under an applied bias of - 65 mV with 465-nm LED illumination. Derived from ZIF-67 via in situ sulfidation, the hollow nanocage architecture integrated CdS nanoparticles with CoS to form a direct Z-scheme heterojunction, while decorating Pd quantum dots (QDs) created a Schottky barrier, implementing a crucial dual charge-transfer enhancement strategy. Density functional theory (DFT) simulations confirmed a 0.
View Article and Find Full Text PDFACS Appl Mater Interfaces
September 2025
Department of Material Sciences and Engineering, Seoul National University, Seoul 08826, Republic of Korea.
A nanometer-scale multilayer gate insulator (GI) engineering strategy is introduced to simultaneously enhance the on-current and bias stability of amorphous InGaZnO thin-film transistors (a-IGZO TFTs). Atomic layer deposition supercycle modifications employ alternating layers of AlO, TiO, and SiO to optimize the gate-oxide stack. Each GI material is strategically selected for complementary functionalities: AlO improves the interfacial quality at both the GI/semiconductor and GI/metal interfaces, thereby enhancing device stability and performance; TiO increases the overall dielectric constant; and SiO suppresses leakage current by serving as a high-energy barrier between AlO and TiO.
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