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Article Abstract
Two-dimensional (2D) semiconductors hold a great promise for next-generation electronics. Yet, achieving a clean and intact transfer of 2D films on device-compatible substrates remains a critical challenge. Here, we report an approach that uses selenium (Se) as the intermediate layer to facilitate the transfer of wafer-scale molybdenum disulfide (MoS) monolayers on target substrates with high surface/interface cleanness and structural integrity. Our method enables nearly 100% film intactness of the transferred 2D semiconductors which are free from residues or contaminants. Characterizations reveal that the Se-assisted dry-transfer yields MoS film with superior quality compared to conventional transfer techniques. The fabricated field-effect transistors (FETs) and logic circuits based on these transferred films demonstrate remarkable electrical performance, including on/off current ratios up to 2.7×10 and electron mobility of 71.3 cm·V·s for individual FETs. Our results underscore the feasibility of this dry-transfer technology for fabricating high-performance 2D electronics that are fully compatible with standard semiconductor processes, paving the way for integrating 2D materials into advanced electronic applications.
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| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC12078512 | PMC |
| http://dx.doi.org/10.1038/s41467-025-59803-1 | DOI Listing |
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