Fabrication of High-Quality MoS/Graphene Lateral Heterostructure Memristors.

Integrating two-dimensional transition-metal dichalcogenides with graphene is attractive for low-power memory and neuromorphic hardware, yet sequential wet transfer leaves polymer residues and high contact resistance. We demonstrate a complementary metal-oxide-semiconductor (CMOS)-compatible, transfer-free route in which an atomically thin amorphous MoS precursor is RF-sputtered directly onto chemical vapor-deposited few-layer graphene and crystallized by confined-space sulfurization at 800 °C. Grazing-incidence X-ray reflectivity, Raman spectroscopy, and X-ray photoelectron spectroscopy confirm the formation of residue-free, three-to-four-layer 2H-MoS (roughness: 0.

Large-scale synthesis of monolayer WSby low-temperature sulfurization of oxidized magnetron sputtered monolayer W precursors in a microreactor.

We report large-scale synthesis of monolayer WSfilms obtained by sulfurization of oxidized magnetron sputtered monolayer W precursors. Literature routes typically require ∼ 800°C, well above the 400°C limit imposed by back-end-of-line (BEOL) integration. Here, using an enhanced chemical vapor deposition (CVD) approach, the magnetron sputtered ultrathin W precursor (a W monolayer film, 0.

A Two-Step Magnetron Sputtering Approach for the Synthesis of CuZnSnS Films from CuSnS\ZnS Stacks.

CuZnSnS (CZTS) is regarded as one of the emerging materials for next-generation thin film solar cells. However, its synthesis is complex, and obtaining a single-phase CZTS thin film is difficult. This work reports the elaboration of CuZnSnS thin films by a sequential magnetron sputtering deposition of CuSnS (CTS) and ZnS as stacked films.

Synthesis and Characterization of CuZnSnS Thin Films Obtained by Combined Magnetron Sputtering and Pulsed Laser Deposition.

CuZnSnS (CZTS) is a complex quaternary material, and obtaining a single-phase CZTS with no secondary phases is known to be challenging and dependent on the production technique. This work involves the synthesis and characterization of CZTS absorber layers for solar cells. Thin films were deposited on Si and glass substrates by a combined magnetron sputtering (MS) and pulsed laser deposition (PLD) hybrid system, followed by annealing without and with sulfur powder at 500 °C under argon (Ar) flow.

Influence of Deposition Method on the Structural and Optical Properties of GeSbTe.

Ge2Sb2Te5 (GST-225) is a chalcogenide material with applications in nonvolatile memories. However, chalcogenide material properties are dependent on the deposition technique. GST-225 thin films were prepared using three deposition methods: magnetron sputtering (MS), pulsed laser deposition (PLD) and a deposition technique that combines MS and PLD, namely MSPLD.

Secondary Crystalline Phases Influence on Optical Properties in Off-Stoichiometric CuS-ZnS-SnS Thin Films.

CuZnSnS (CZTS) is an economically and environmentally friendly alternative to other toxic and expensive materials used for photovoltaics, however, the variation in the composition during synthesis is often followed by the occurrence of the secondary binary and ternary crystalline phases. These phases produce changes in the optical absorption edge important in cell efficiency. We explore here the secondary phases that emerge in a combinatorial CuS-ZnS-SnS thin films library.