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Eco-friendly, lead-free BaTiO-based piezoelectrics are critical for sustainable electronics, but improving their piezoelectric properties often compromises Curie temperature (T). To address this trade-off, we implemented an innovative stress engineering approach by introducing a secondary phase BaAlO in BaCaTiZrO (BCTZ) ceramics. The thermal expansion mismatch between BCTZ and BaAlO induces internal stress within the BCTZ matrix, causing significant lattice distortion and phase fraction modulation, which improves both T and the piezoelectric coefficient (d). Additionally, the local electric field and Al doping in ABO lattice further enhance d. Optimized BCTZ ceramics achieve d of 650 ± 16 pC N, d of 1070 pm V, and T of 96.5 ± 1.0 °C, placing them at the forefront of lead-free BaTiO-based piezoelectrics. This study underscores the effectiveness of bulk stress engineering via a secondary phase for enhancing lead-free piezoelectric ceramics, paving the way for developing high-performance piezoelectric ceramics suitable for broad temperature applications.
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http://dx.doi.org/10.1038/s41467-025-59311-2 | DOI Listing |
ACS Omega
September 2025
China Electric Power Research Institute, Beijing 100192, China.
In response to the demand for lead-free replacement of multilayer piezoelectric actuators (MLAs), KNN-based lead-free piezoceramics with high curie temperatures and environmental friendliness are selected for the application study. To improve the piezoelectric properties of piezoelectric ceramics, a texture approach was adopted, and 0.2% CuO was added as a sintering aid; the TGG texturing technique was combined with the stacked element cofiring technique.
View Article and Find Full Text PDFSmall
September 2025
Department of Semiconductor Physics and Institute of Quantum Convergence Technology, Kangwon National University, Chuncheon, 24341, South Korea.
2D van der Waals ferromagnets hold immense promise for spintronic applications due to their controllability and versatility. Despite their significance, the realization and in-depth characterization of ferromagnetic materials in atomically thin single layers, close to the true 2D limit, has been scarce. Here, a successful synthesis of monolayer (ML) 1T-CrTe is reported on a bilayer graphene (BLG) substrate via molecular beam epitaxy.
View Article and Find Full Text PDFSci Adv
September 2025
The Rowland Institute at Harvard, Harvard University, Cambridge, MA 02138, USA.
Ferroelectricity in BaTiO was observed nearly 80 years ago, but the mechanism underlying its ferroelectric-paraelectric phase transition remains elusive. The order-disorder transition has been recognized as playing a critical role; however, the precise nature of the order parameter still remains under scrutiny, including the local dipole direction and the correlations above and below the Curie temperature. Using in situ scanning transmission electron microscopy, we directly map polar displacements in BaTiO across the ferroelectric-paraelectric phase transition, providing atomistic insights into an order-disorder mechanism.
View Article and Find Full Text PDFACS Nano
September 2025
Department of Physics, University of South Florida, Tampa, Florida 33620, United States.
Magnetic high-entropy alloys (HEAs) with their unusual blend of long-range magnetic order and exceptional mechanical properties are beneficial for the development of next-generation spintronic devices that can withstand extreme conditions. Developing room-temperature magnetic HEAs and understanding the link among their magnetic, electronic, and mechanical properties are crucial. Here, we introduce nanocrystalline CoCrFeNiGa as a room-temperature bulk magnetic HEA candidate based on 3d-transition metals and elucidate its magnetic and electronic properties.
View Article and Find Full Text PDFPhys Chem Chem Phys
September 2025
Department of Physics, University of Sargodha, 40100 Sargodha, Pakistan.
The BaGdRuO double perovskite oxide demonstrates intriguing behavior, arising from competing antiferromagnetic (AFM) and ferrimagnetic (FiM) phases. Under the GGA++SOC scheme, the system exhibits an AFM ground state with a very small energy difference of -11.39 meV compared to the FiM one.
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