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Colloidal InSb quantum dots (QDs) are promising mid-infrared (MIR) photodetection materials due to their suitable bandgap, unparalleled room temperature electronic properties, environmental-friendly elemental composition, and facile solution processability. However, current InSb QDs suffer from limited spectral absorption within 2 µm, polydisperse QDs populations, and complex size-selective precipitation for further use, due to the lack of applicable growth theory and synthetic method. Here, we present a novel synthetic strategy for InSb QDs, which is featured by the initial formation of an amorphous intermediate and a subsequent stepwise crystallization process. This strategy enables the achievement of monodisperse InSb QDs with unprecedented 5.8-22.2 nm size range, and a remarkably low size distribution deviation of 5.8% without the need of any size-selective precipitation. For the first time, we realize the synthesis of InSb QDs with absorption wavelength exceeding 3000 nm, the record among the environmental-friendly QDs. The results presented here will pave the way toward environmental-friendly QDs as outstanding infrared optical and optoelectronic materials and push the frontier of solution-processed QDs into the mid-infrared regime applications.
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http://dx.doi.org/10.1002/anie.202506387 | DOI Listing |
Nano Lett
August 2025
School of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China.
Colloidal InSb quantum dots (QDs) hold significant promise in infrared photodetection. However, the current InSb QDs suffer from poor carrier mobility and limited spectral response (<1.8 μm) due to complex surface structure and high sensitivity to hydrolysis and oxidation.
View Article and Find Full Text PDFNano Converg
May 2025
Division of Materials Science and Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul, 04763, Republic of Korea.
Pnictide-based quantum dots (QDs) have emerged as promising materials for next-generation infrared photodetectors due to their superior physical and electrical properties. Among them, InAs and InSb QDs are particularly attractive for their tunable bandgaps in the short-wave infrared (SWIR) region, high carrier mobility, and compatibility with solution-based, large-area, and low-cost fabrication processes. This review discusses recent advancements in the synthesis of InAs and InSb QDs, focusing on precursor strategies and surface engineering techniques to enhance their optical and electronic properties.
View Article and Find Full Text PDFAngew Chem Int Ed Engl
June 2025
School of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No.1 Sub-Lane Xiangshan, Xihu District, Hangzhou, 310024, China.
Colloidal InSb quantum dots (QDs) are promising mid-infrared (MIR) photodetection materials due to their suitable bandgap, unparalleled room temperature electronic properties, environmental-friendly elemental composition, and facile solution processability. However, current InSb QDs suffer from limited spectral absorption within 2 µm, polydisperse QDs populations, and complex size-selective precipitation for further use, due to the lack of applicable growth theory and synthetic method. Here, we present a novel synthetic strategy for InSb QDs, which is featured by the initial formation of an amorphous intermediate and a subsequent stepwise crystallization process.
View Article and Find Full Text PDFSensors (Basel)
January 2025
Clausthal Centre of Materials Technology, TU Clausthal, 38678 Clausthal-Zellerfeld, Germany.
Infrared (IR) sensors are widely used in various applications due to their ability to detect infrared radiation. Currently, infrared detector technology is in its third generation and faces enormous challenges. IR radiation propagation is categorized into distinct transmission windows with the most intriguing aspects of thermal imaging being mid-wave infrared (MWIR) and long-wave infrared (LWIR).
View Article and Find Full Text PDFJ Am Chem Soc
May 2024
Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, Groningen, 9747AG, The Netherlands.