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Article Abstract
The development of p-type WSe transistors has lagged behind n-type MoS because of challenges in growing high-quality, large-area WSe films. This study employs an alkali-assisted CVD (AACVD) method by using KOH to enhance nucleation on sapphire substrates, effectively promoting monolayer growth on c-plane sapphire and enabling controlled bilayer seeding on miscut surfaces with artificial steps. With AACVD, we achieve 2-inch monolayer and centimeter-scale bilayer WSe films with defect densities as low as 1.6 × 10cm (monolayer) and 1.8 × 10cm (bilayer), comparable to exfoliated WSe. Bilayer WSe transistors exhibit hole/electron mobilities of 119/34 cm²/Vs, while monolayers achieve 105/22 cm²/Vs with suitable metal contacts. Additionally, bilayer WSe demonstrates lower contact resistance for both n-type and p-type transistors, making it highly promising for future high-performance electronic applications.
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| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC11926382 | PMC |
| http://dx.doi.org/10.1038/s41467-025-57986-1 | DOI Listing |
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