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The emergence of two-dimensional (2D) materials has catalyzed significant advancements in the fields of piezotronics and piezo-phototronics, owing to their exceptional mechanical, electronic, and optical properties. This review provides a comprehensive examination of key 2D piezoelectric and piezo-phototronic materials, including transition metal dichalcogenides, hexagonal boron nitride (h-BN), and phosphorene, with an emphasis on their unique advantages and recent research progress. The underlying principles of piezotronics and piezo-phototronics in 2D materials is discussed, focusing on the fundamental mechanisms which enable these phenomena. Additionally, it is analyzed factors affecting piezoelectric and piezo-photoelectric properties, with a particular focus on the intrinsic piezoelectricity of 2D materials and the enhancement of out-of-plane polarization through various modulation techniques and materials engineering approaches. The potential applications of these materials are explored from piezoelectric nanogenerators to piezo-phototronic devices and healthcare. This review addresses future challenges and opportunities, highlighting the transformative impact of 2D materials on the development of next-generation electronic, optoelectronic, and biomedical devices.
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http://dx.doi.org/10.1002/advs.202411422 | DOI Listing |
Adv Sci (Weinh)
June 2025
Department of Materials Science and Engineering, Yonsei University, Seoul, 03722, Republic of Korea.
The emergence of two-dimensional (2D) materials has catalyzed significant advancements in the fields of piezotronics and piezo-phototronics, owing to their exceptional mechanical, electronic, and optical properties. This review provides a comprehensive examination of key 2D piezoelectric and piezo-phototronic materials, including transition metal dichalcogenides, hexagonal boron nitride (h-BN), and phosphorene, with an emphasis on their unique advantages and recent research progress. The underlying principles of piezotronics and piezo-phototronics in 2D materials is discussed, focusing on the fundamental mechanisms which enable these phenomena.
View Article and Find Full Text PDFPhys Chem Chem Phys
July 2023
National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China.
We systematically investigate the mechanical, dynamical, and piezoelectric properties of MAZ monolayers (M = Mo, W; A = Si, Ge and Z = N, P, As) based on first-principles calculations. The structural properties, cohesive energy and formation energy analyses show that all of the considered MAZ monolayers are dynamically stable. molecular dynamics simulations further indicate that the MAZ monolayers can sustain stability at high temperatures.
View Article and Find Full Text PDFMicromachines (Basel)
December 2022
School of Microelectronics, Xi'an Jiaotong University, Xi'an 710049, China.
The piezotronic effect is a coupling effect of semiconductor and piezoelectric properties. The piezoelectric potential is used to adjust the p-n junction barrier width and Schottky barrier height to control carrier transportation. At present, it has been applied in the fields of sensors, human-machine interaction, and active flexible electronic devices.
View Article and Find Full Text PDFSensors (Basel)
November 2021
Information Science Academy of China Electronics Technology Group Corporation, Beijing 100086, China.
With the demand for accurately recognizing human actions and environmental situations, multifunctional sensors are essential elements for smart applications in various emerging technologies, such as smart robots, human-machine interface, and wearable electronics. Low-dimensional materials provide fertile soil for multifunction-integrated devices. This review focuses on the multifunctional sensors for mechanical stimulus and environmental information, such as strain, pressure, light, temperature, and gas, which are fabricated from low-dimensional materials.
View Article and Find Full Text PDFSci Bull (Beijing)
January 2020
School of Physics, University of Electronic Science and Technology of China, Chengdu 610054, China; Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 100083, China; College of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing 100049, C
Third generation semiconductors for piezotronics and piezo-phototronics, such as ZnO and GaN, have both piezoelectric and semiconducting properties. Piezotronic devices normally exhibit high strain sensitivity because strain-induced piezoelectric charges control or tune the carrier transport at junctions, contacts and interfaces. The distribution width of piezoelectric charges in a junction is one of important parameters.
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