Category Ranking
98%
Total Visits
921
Avg Visit Duration
2 minutes
Citations
20
Article Abstract
A wide range of mesoporous Zr and Hf metal-organic frameworks (MOFs), namely MIP-206, MOF-808, and NU-1000, as well as the microporous UiO-66, were systematically investigated and compared in terms of thermal and chemical stability. The holistic effects of metal type (Zr Hf), linker type (small and rigid large and flexible), and framework topology (2D 3D) on the overall framework stability were investigated.
Download full-text PDF |
Source |
|---|---|
| http://dx.doi.org/10.1039/d4cc03103b | DOI Listing |
Publication Analysis
Top Keywords
Similar Publications
KNaZrF(HO): A Hydrated Zirconium Fluoride with a Second-Harmonic Generation Effect and a Short Ultraviolet Cutoff Edge Induced by Cosubstitution with Heterovalent Cations.
Inorg Chem
August 2025
School of Chemistry and Chemical Engineering, Yangzhou University, Yangzhou, Jiangsu 225002, P. R. China.
The development of nonlinear optical (NLO) crystal materials with short ultraviolet cutoff edges is of great significance to laser applications and industrial development. Based on acentric AE-M-F (SrZrF (), CaZrF (), and CaHfF (), with AE = alkaline earth metal and M = Zr, Hf), a novel hydrated zirconium-based fluoride, KNaZrF(HO) (), was obtained through a cosubstitution strategy involving mixed alkali metal cations. KNaZrF(HO) crystallizes in the 2 space group and presents a unique three-dimensional {[ZrF(HO)]} anion framework composed of hydrogen-bonded {[ZrF(HO)]} chains.
View Article and Find Full Text PDFPeak Splitting and Bias Fields in Ferroelectric Hafnia Mediated by Interface Charge Effects.
ACS Appl Mater Interfaces
September 2025
NaMLab gGmbH, 01187 Dresden, Germany.
The pristine state of hafnium-based ferroelectric devices exhibits various unwanted properties, such as imprinting and peak splitting, which diminish with bipolar cycling. The incorporation of a niobium oxide layer at different positions in metal-ferroelectric-metal and metal-ferroelectric-insulator-metal stacks is used to modify the pristine state of the device. X-ray photoelectron spectroscopy and transmission electron microscopy measurements are used to investigate the influence of niobium oxide on the zirconium hafnium oxide layer.
View Article and Find Full Text PDFProximity-Induced Ferroelectric Switching in Wurtzite/Fluorite Bilayers for High-Performance Ferroelectric Field-Effect Transistor.
Adv Mater
August 2025
Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University, Seoul, 08826, South Korea.
Proximity ferroelectricity, wherein polarization switching in one ferroelectric layer with a lower energy barrier can trigger switching in an adjacent ferroelectric with a higher energy barrier, has been demonstrated only in bilayers composed of structurally similar wurtzite-structured materials. This work demonstrates proximity-induced ferroelectric switching across a heterostructure composed of crystallographically and functionally dissimilar materials, wurtzite-structured AlScN and fluorite-structured HfZrO. The AlScN/HfZrO and AlN/HfZrO bilayers exhibit cooperative switching dynamics despite their contrasting symmetry and polarization behaviors.
View Article and Find Full Text PDFIntrinsic Ferroelectric Polarization in Doped HfO and ZrO.
Small
August 2025
Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, Bellaterra, Barcelona, 08193, Spain.
Fluorite ferroelectrics based on HfO and ZrO hold great potential for efficient memory devices. For these applications, it is of interest to control and maximize the remanent polarization. The literature shows a strong dispersion of polarization values for the same chemical composition.
View Article and Find Full Text PDFAssociative Learning Emulation in HZO-Based Ferroelectric Memristor Devices.
Materials (Basel)
July 2025
Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Republic of Korea.
Neuromorphic computing inspired by biological synapses requires memory devices capable of mimicking short-term memory (STM) and associative learning. In this study, we investigate a 15 nm-thick Hafnium zirconium oxide (HZO)-based ferroelectric memristor device, which exhibits robust STM characteristics and successfully replicates Pavlov's dog experiment. The optimized 15 nm HZO layer demonstrates enhanced ferroelectric properties, including a stable orthorhombic phase and a reliable short-term synaptic response.
View Article and Find Full Text PDF