Category Ranking
98%
Total Visits
921
Avg Visit Duration
2 minutes
Citations
20
Article Abstract
In-plane heterostructures exhibit extraordinary chemical and electron transfer properties, which have received remarkable research attention. However, the synthesis of an in-plane MoC/MoO heterostructure has been rarely reported, and the deep investigation of the effect of its fine structure on reactivity is of great significance. Notably, the in-plane heterostructures endow the material with abundant grain boundaries, which facilitate the formation of surface acid sites and active oxygen species, thus contributing to the sensing performance. Our work provides a promising platform to design in-plane heterostructures for various advanced applications.
Download full-text PDF |
Source |
|---|---|
| http://dx.doi.org/10.1039/d4dt02925a | DOI Listing |
Publication Analysis
Top Keywords
Similar Publications
Nanoscale Decoupling of Carrier-Phonon Transport in Carbon Nanotube-Halide Perovskite Heterostructures.
Adv Sci (Weinh)
September 2025
Material Science and Engineering Program (MSE), Physical Sciences and Engineering Division (PSE), King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Kingdom of Saudi Arabia.
In conventional semiconductors, electrical and thermal conductivity are typically coupled, posing a challenge in optimizing both simultaneously. Overcoming this inherent trade-off enables strategies for advancing electronic applications. Herein, a strategy is demonstrated to decouple electrical and thermal conductivity trade-off by creating heterostructures of highly conductive single-walled carbon nanotubes (SWCNTs) coated with low conductivity hybrid perovskites.
View Article and Find Full Text PDFSubnanosecond Field-Free Switching of a Wafer-Scalable van der Waals Ferromagnet at Room Temperature.
Adv Mater
August 2025
State Key Laboratory of Spintronics, Hangzhou International Innovation Institute, Beihang University, Hangzhou, 311115, China.
Electrical manipulation of magnetism in 2D van der Waals (vdW) ferromagnet (FM) holds promise for next-generation spintronic devices. Investigating field-free, ultrafast switching at room temperature in wafer-scalable vdW heterostructures can advance the development of faster memories and enhance the understanding of magnetization switching mechanisms in 2D FMs. In this study, field-free, room temperature spin-orbit torque (SOT) switching at subnanosecond timescales in a wafer-scalable FeGaTe/Pt heterostructure by epitaxial growth engineering is demonstrated.
View Article and Find Full Text PDFFast, Reconfigurable Domain-Wall Logic in a Magnetic Insulator.
Adv Mater
August 2025
State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, 100871, China.
Conventional computing systems, based on silicon transistors, face challenges in meeting the growing demand for high computing efficiency in applications such as big data and artificial intelligence. Spin-based logic devices, particularly those utilizing chiral domain walls, offer a promising alternative due to their potential for high-performance and integration with high-density memory. Here, heterostructures composed of magnetic insulator TbIG and ultrathin Co layers are created, enabling field-free current-driven domain-wall motion at speeds exceeding 1.
View Article and Find Full Text PDFStrong Quantum Confinement of 2D Excitons in an Engineered 1D Potential Induced by Proximal Ferroelectric Domain Walls.
Nano Lett
August 2025
Walter Schottky Institut and TUM School of Natural Sciences, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany.
We investigate the confinement of neutral excitons in a one-dimensional (1D) potential engineered by proximizing hexagonal boron nitride (hBN)-encapsulated monolayer MoSe to ferroelectric domain walls (DWs) in periodically poled LiNbO. Our device exploits the nanometer scale in-plane electric field gradient at the DW to induce dipolar exciton confinement via the DC Stark effect. Spatially resolved photoluminescence spectroscopy reveals the emergence of narrow emission lines redshifted from the MoSe neutral exciton by up to ∼100 meV, depending on the sample structure.
View Article and Find Full Text PDFPolarization Textures in Moiré Patterns of van der Waals Homo- and Heterostructures via Sliding Ferroelectrics.
Nano Lett
August 2025
Shenzhen Geim Graphene Center and Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China.
Ferroelectricity can emerge in moiré patterns formed by stacking nonferroelectric monolayers, such as graphene and hexagonal boron nitride, in specific configurations. This moiré-induced ferroelectricity not only extends the scope of two-dimensional (2D) ferroelectrics but also deepens our understanding of ferroelectric mechanisms in low-dimensional systems. Here, we present a general framework for analyzing polarization in moiré superlattices by decomposing them into fundamental structural components.
View Article and Find Full Text PDF