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Carbon dioxide electroreduction is a green technology for artificial carbon sequestration, which is being delayed from industrialization due to the lack of efficient catalysts at high current conditions. Herein, the BiO nanoflakes were uniformly grown on a defective porous carbon (PC). This self-assembling BiO/PC catalyst was applied to drive CO electroreduction at 1.0 A, 1.5 A and 2.0 A while the Faradaic efficiency of formate reaches 91.50 %, 86.30 % and 84.22 %, respectively. Density functional theory calculations revealed the intrinsic defect of carbon is able to give electron to Bi through O bridge, which increased the electron aggregation of Bi and lowered the generation energy barrier of *OCHO intermediate. Additionally, the unique 3D network of staggered BiO enhances the CO adsorption and favors the electron transportation. By integrating all above advantages into a solid electrolyte-type cell, we are able to produce pure formic acid in a rate of 15.48 mmol h at ampere current.
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http://dx.doi.org/10.1016/j.jcis.2024.09.116 | DOI Listing |
ACS Appl Mater Interfaces
September 2025
National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan.
In this study, we analyze InO thin-film transistors (InO-TFT) using synchrotron-based hard X-ray photoelectron spectroscopy (HAXPES) in conditions. A bottom-gate InO-TFT with a high- AlO gate dielectric, grown on thermally oxidized silicon (SiO/p-Si), was examined while operating at varying and . The results reveal that the In 3d core level binding energy varies along the horizontal channel length, driven by the potential gradient induced by .
View Article and Find Full Text PDFWorld J Microbiol Biotechnol
September 2025
School of Life Sciences, Jawaharlal Nehru University, New Mehrauli Road, New Delhi, 110067, India.
We identified, isolated, and functionally characterized a cyclin-dependent kinase (CDK), PiPho85, from Piriformospora indica. The identified PiPho85 contains TY, PSTAIRE, protein kinase domain, and an ATP binding site which is highly conserved among the Pho85/CDK5 family protein specific for Saccharomyces cerevisiae. In a S.
View Article and Find Full Text PDFDiscov Nano
September 2025
School of Physics and Optoelectronic Engineering, Beijing University of Technology, Beijing, 100124, China.
Surface-enhanced Raman spectroscopy (SERS) by 2D semiconductors relies on chemical (CM) enhancement driven by charge-transfer (CT) processes in bandgap alignment between molecules and substrates. Unfortunately, the low light absorption and weak conferment in the atomic-layer material limit the enhancement factor of Raman intensity (EFRI). Improving the utilization efficiency of excitation light is therefore essential for promoting SERS performance of 2D semiconductors.
View Article and Find Full Text PDFSmall
September 2025
Department of Materials Science, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba, 263-8522, Japan.
1D electronic structures on 2D crystalline surfaces are crucial for investigating low-dimensional quantum phenomena and enabling the development of dimensionally engineered nanodevices. However, the inherent periodic symmetry of 2D atomic lattices generally leads to delocalized electronic band extending across the surface, making the creation of periodic 1D electronic states a significant challenge. Here, robust 1D electronic ordering is demonstrated in ultrathin Mn films grown on an atomically flat, non-reconstructed body-centered cubic Fe substrate.
View Article and Find Full Text PDFNano Lett
September 2025
Department of Mechanical Engineering, Columbia University, New York, New York 10027, United States.
Advancing both the fundamental understanding and technological application of two-dimensional semiconducting transition metal dichalcogenides (TMDs) hinges on precise control and identification of atomic-scale defects. Although self-flux growth yields exceptionally pure TMD crystals, the nature of residual defects has remained an open question. Here, we use scanning tunneling microscopy (STM) to directly image and identify point defects in both monolayer and bulk self-flux grown WSe.
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