Category Ranking

98%

Total Visits

921

Avg Visit Duration

2 minutes

Citations

20

Article Abstract

Lately, carbazole-based self-assembled monolayers (SAMs) are widely employed as effective hole-selective layers (HSLs) in inverted perovskite solar cells (PSCs). Nevertheless, these SAMs tend to aggregate in solvents due to their amphiphilic nature, hindering the formation of a monolayer on the ITO substrate and impeding effective passivation of deep defects in the perovskites. In this study, a series of new SAMs including DPA-B-PY, CBZ-B-PY, POZ-B-PY, POZ-PY, POZ-T-PY, and POZ-BT-PY are synthesized, which are employed as interfacial repairers and coated atop CNph SAM to form a robust CNph SAM@pseudo-planar monolayer as HSL in efficient inverted PSCs. The CNph SAM@pseudo-planar monolayer strategy enables a well-aligned interface with perovskites, synergistically promoting perovskite crystal growth, improving charge extraction/transport, and minimizing nonradiative interfacial recombination loss. As a result, the POZ-BT-PY-modified PSC realizes an impressively enhanced solar efficiency of up to 24.45% together with a fill factor of 82.63%. Furthermore, a wide bandgap PSC achieving over 19% efficiency. Upon treatment with the CNph SAM@pseudo-planar monolayer, also demonstrates a non-fullerene organic photovoltaics (OPVs) based on the PM6:BTP-eC9 blend, which achieves an efficiency of 17.07%. Importantly, these modified PSCs and OPVs all show remarkably improved stability under various testing conditions compared to their control counterparts.

Download full-text PDF

Source
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC11423173PMC
http://dx.doi.org/10.1002/advs.202404725DOI Listing

Publication Analysis

Top Keywords

sam@pseudo-planar monolayer
16
cnph sam@pseudo-planar
12
self-assembled monolayers
8
perovskite solar
8
solar cells
8
organic photovoltaics
8
monolayer strategy
8
monolayer
5
repairing interfacial
4
interfacial defects
4

Similar Publications

We report direct spectroscopic evidence of correlation-driven Mott states in layered Nb_{3}Cl_{8} through combining scanning tunneling microscopy (STM) and dynamical mean-field theory. The Hubbard bands persist down to monolayer, providing the definitive evidence for the Mottness in Nb_{3}Cl_{8}. While the size of the Mott gap remains almost constant across all layers, a striking layer-parity-dependent oscillation emerges in the local density of states (LDOS) between even (n=2, 4, 6) and odd layers (n=1, 3, 5), which arises from the dimerization and correlation modulation of the obstructed atomic states, respectively.

View Article and Find Full Text PDF

Atomic point defects provide an alternative tuning knob for engineering the properties and functionality of 2D transition metal dichalcogenides (TMDs). Prior to engineering point defects to tailor material properties, identification and investigation of their electronic structure is key to their implementation for device applications. The two most common atomic point defects in monolayer WS are sulfur vacancies and oxygen substituents, which have been thoroughly reported on, but their interaction has yet to be investigated.

View Article and Find Full Text PDF

Magnetic two-dimensional van der Waals (vdWs) materials hold potential applications in low-power and high-speed spintronic devices due to their degrees of freedom such as valley and spin. In this Letter, we propose a mechanism that uses stacking engineering to control valley polarization (VP), ferroelectricity, layer polarization (LP), and magnetism in vdWs bilayers. Through first-principles calculations, we predict that the T-VSI monolayer is a magnetic semiconductor with a sizable VP.

View Article and Find Full Text PDF

This study presents a novel carbazole derivative functionalized with hydroxy diphosphonic acid groups (HDPACz) as an efficient annealing-free hole transport layer (HTL) through strong bidentate anchoring to indium tin oxide (ITO). Compared to conventional mono-phosphonic acid counterparts, HDPACz demonstrates superior ITO surface coverage and interfacial dipole, effectively modulating the work function of ITO. Theoretical calculations reveal enhanced adsorption energy (-3.

View Article and Find Full Text PDF

Wafer-scale integration of monolayer MoS residue-free support layer etching and angular strain suppression.

Nanoscale

September 2025

Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore.

A crack-free and residue-free transfer technique for large-area, atomically-thin 2D transition metal dichalcogenides (TMDCs) such as MoS and WS is critical for their integration into next-generation electronic devices, either as channel materials replacing silicon or as back-end-of-line (BEOL) components in 3D-integrated nano-systems on CMOS platforms. However, cracks are frequently observed during the debonding of TMDCs from their growth substrates, and polymer or metal residues are often left behind after the removal of adhesive support layers wet etching. These issues stem from excessive angular strain accumulated during debonding and the incomplete removal of support layers due to their low solubility.

View Article and Find Full Text PDF