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Lately, carbazole-based self-assembled monolayers (SAMs) are widely employed as effective hole-selective layers (HSLs) in inverted perovskite solar cells (PSCs). Nevertheless, these SAMs tend to aggregate in solvents due to their amphiphilic nature, hindering the formation of a monolayer on the ITO substrate and impeding effective passivation of deep defects in the perovskites. In this study, a series of new SAMs including DPA-B-PY, CBZ-B-PY, POZ-B-PY, POZ-PY, POZ-T-PY, and POZ-BT-PY are synthesized, which are employed as interfacial repairers and coated atop CNph SAM to form a robust CNph SAM@pseudo-planar monolayer as HSL in efficient inverted PSCs. The CNph SAM@pseudo-planar monolayer strategy enables a well-aligned interface with perovskites, synergistically promoting perovskite crystal growth, improving charge extraction/transport, and minimizing nonradiative interfacial recombination loss. As a result, the POZ-BT-PY-modified PSC realizes an impressively enhanced solar efficiency of up to 24.45% together with a fill factor of 82.63%. Furthermore, a wide bandgap PSC achieving over 19% efficiency. Upon treatment with the CNph SAM@pseudo-planar monolayer, also demonstrates a non-fullerene organic photovoltaics (OPVs) based on the PM6:BTP-eC9 blend, which achieves an efficiency of 17.07%. Importantly, these modified PSCs and OPVs all show remarkably improved stability under various testing conditions compared to their control counterparts.
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http://dx.doi.org/10.1002/advs.202404725 | DOI Listing |
Phys Rev Lett
August 2025
ShanghaiTech University, School of Physical Science and Technology, Shanghai 201210, China.
We report direct spectroscopic evidence of correlation-driven Mott states in layered Nb_{3}Cl_{8} through combining scanning tunneling microscopy (STM) and dynamical mean-field theory. The Hubbard bands persist down to monolayer, providing the definitive evidence for the Mottness in Nb_{3}Cl_{8}. While the size of the Mott gap remains almost constant across all layers, a striking layer-parity-dependent oscillation emerges in the local density of states (LDOS) between even (n=2, 4, 6) and odd layers (n=1, 3, 5), which arises from the dimerization and correlation modulation of the obstructed atomic states, respectively.
View Article and Find Full Text PDFACS Nano
September 2025
Department of Physics, University of Texas at Austin, Austin, Texas 78712, United States.
Atomic point defects provide an alternative tuning knob for engineering the properties and functionality of 2D transition metal dichalcogenides (TMDs). Prior to engineering point defects to tailor material properties, identification and investigation of their electronic structure is key to their implementation for device applications. The two most common atomic point defects in monolayer WS are sulfur vacancies and oxygen substituents, which have been thoroughly reported on, but their interaction has yet to be investigated.
View Article and Find Full Text PDFJ Phys Chem Lett
September 2025
Materials Genome Institute, School of Materials and Energy, Yunnan University, Kunming 650091, P. R. China.
Magnetic two-dimensional van der Waals (vdWs) materials hold potential applications in low-power and high-speed spintronic devices due to their degrees of freedom such as valley and spin. In this Letter, we propose a mechanism that uses stacking engineering to control valley polarization (VP), ferroelectricity, layer polarization (LP), and magnetism in vdWs bilayers. Through first-principles calculations, we predict that the T-VSI monolayer is a magnetic semiconductor with a sizable VP.
View Article and Find Full Text PDFSmall
September 2025
Beijing Key Laboratory of Energy Conversion and Storage Materials, College of Chemistry, Beijing Normal University, Beijing, 100875, China.
This study presents a novel carbazole derivative functionalized with hydroxy diphosphonic acid groups (HDPACz) as an efficient annealing-free hole transport layer (HTL) through strong bidentate anchoring to indium tin oxide (ITO). Compared to conventional mono-phosphonic acid counterparts, HDPACz demonstrates superior ITO surface coverage and interfacial dipole, effectively modulating the work function of ITO. Theoretical calculations reveal enhanced adsorption energy (-3.
View Article and Find Full Text PDFNanoscale
September 2025
Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore.
A crack-free and residue-free transfer technique for large-area, atomically-thin 2D transition metal dichalcogenides (TMDCs) such as MoS and WS is critical for their integration into next-generation electronic devices, either as channel materials replacing silicon or as back-end-of-line (BEOL) components in 3D-integrated nano-systems on CMOS platforms. However, cracks are frequently observed during the debonding of TMDCs from their growth substrates, and polymer or metal residues are often left behind after the removal of adhesive support layers wet etching. These issues stem from excessive angular strain accumulated during debonding and the incomplete removal of support layers due to their low solubility.
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