Category Ranking

98%

Total Visits

921

Avg Visit Duration

2 minutes

Citations

20

Article Abstract

We introduce an enhanced performance organic-inorganic hybrid p-n junction photodiode, utilizing poly[bis(4-phenyl) (2,4,6-trimethylphenyl)amine] (PTAA) and ZnO, fabricated through a solution-based process at a low temperature under 100 °C. Improved interfacial electronic structure, characterized by shallower Gaussian standard deviation of the density-of-state distribution and a larger interface dipole, has resulted in a remarkable fold increase of ∼10 in signal-to-noise ratio for the device. This photodiode exhibits a high specific detectivity (2.32 × 10 Jones, ) and exceptional rectification ratio (5.47 × 10 at ±1 V). The primary light response, concentrated in the optimal thickness of the PTAA layer, contributes to response over the entire UVA region and rapid response speed, with rise and fall times of 0.24 and 0.64 ms, respectively. Furthermore, this work demonstrates immense potential of our device for health monitoring applications by enabling real-time and continuous measurements of UV intensity.

Download full-text PDF

Source
http://dx.doi.org/10.1021/acsami.4c05494DOI Listing

Publication Analysis

Top Keywords

p-n junction
8
junction photodiode
8
rectification ratio
8
real-time ultraviolet
4
ultraviolet monitoring
4
monitoring system
4
system low-temperature
4
low-temperature solution-processed
4
solution-processed high-transparent
4
high-transparent p-n
4

Similar Publications

Hard entropy limits of impurity doping prevent further miniaturization of low nanoscale silicon-based very large scale integration (VLSI) devices, thereby obstructing the path toward more energy-efficient VLSI designs with higher yield in compute power. As demonstrated here by synchrotron UV photoelectron spectroscopy (UPS) and X-ray absorption spectroscopy in total fluorescence yield mode (XAS-TFY), intrinsic Si at the bottom of the nanoscale (i-nano-Si) turns into strong p- or n-Si by embedding in silicon nitride (SiN) or silicon dioxide (SiO), respectively. The associated Nanoscale Electronic Structure Shift Induced by Anions at Surfaces (NESSIAS) creates a p/n junction in i-nano-Si by the quantum-chemical impact of SiN- vs SiO-coating, providing energy landscapes to accumulate electrons (holes) when SiO- (SiN-) coated, with free charge carriers provided by metallic interconnects.

View Article and Find Full Text PDF

The continuous miniaturization of semiconductor nanodevices necessitates advanced characterization techniques to probe their internal electrostatic potential under operational conditions. Off-axis electron holography (EH) enables quantitative mapping of phase shifts induced by electrostatic potentials, yet its application in operando transmission electron microscopy (TEM) is hindered by focused ion beam (FIB)-induced surface artifacts, such as amorphized layers and charge trapping, which distort the potential landscape, in addition to long-range electric stray fields. This study introduces an extended multilayer framework to efficiently model 3D electrostatic potential distributions in such FIB-prepared TEM-lamellae.

View Article and Find Full Text PDF

Sensitization of wide bandgap semiconductors by coupling with a low-band-gap semiconductor to improve photoinduced charge carrier separation by the built-in electric field is one of the attractive approaches to develop an efficient photocatalyst. Here we present the development of Ag-ZnMnO/exfoliated g-CN (Ag-ZMO/ECN), a novel photocatalyst designed to remove an inorganic pollutant Cr(VI) under direct solar light irradiation. The enhanced performance of Ag-ZMO/ECN is attributed to efficient charge separation, facilitated by the formation of a p-n junction at the interface of narrow-bandgap p-type ZMO and n-type ECN, and the localized surface plasmon resonance (LSPR) effect of the deposited Ag nanoparticles.

View Article and Find Full Text PDF

Metal organic frameworks (MOFs), crystalline solids consisting of organic ligands and metal ions, have attracted increasing interest in various areas, including catalysis and biology. Functionalizable pore interiors and ultrahigh surface-to-volume ratios of MOFs make them excellent materials, especially for surface-enhanced Raman scattering (SERS) by the photoinduced charge transfer (PICT) between the MOFs and adsorbed molecules for SERS signal amplification. In our previous work, we demonstrated a p-n junction-assisted MOF substrate for enhancing the SERS signal through additional charge transfer, while the notable structural characteristics of MOFs benefit the SERS selectivity.

View Article and Find Full Text PDF

This study proposes a polarity regulation in two-dimensional InSe via substrate engineering. By selecting different substrates (h-BN and multilayer graphene (MLG)/SiO), controllable doping of p-type and n-type regions on the same piece of two-dimensional InSe material is achieved. Utilizing this characteristic, a high-performance homogeneous PN junction is constructed.

View Article and Find Full Text PDF